A light-emitting device including: m emitting units located between a first electrode and a second electrode; and m−1 charge generation units, each located between two neighboring emitting units among the m emitting units and including an n-type charge generation layer and a p-type charge generation layer. The m emitting units may each include an emission layer, at least one of the m emission layers comprises a first emission layer and a second emission layer that are in contact with each other, the first emission layer includes a first host, a second host, and a first dopant, the second emission layer includes a third host, a fourth host, and a second dopant, the first host and the second host form a first exciplex, the third host and the fourth host form a second exciplex, and the first dopant is a delayed fluorescence dopant, and the second dopant is a phosphorescent dopant.

An infrared absorber includes a compound represented by Chemical Formula ##STR00001## In Chemical Formula 1, Ar.sup.1, Ar.sup.2, X.sup.1, L.sup.1, L.sup.2, R.sup.1, R.sup.2, R.sup.3, and R.sup.4 are the same as defined in the detailed description.

The invention relates to novel organic semiconducting compounds containing a polycyclic unit, to methods for their preparation and educts or intermediates used therein, to compositions, polymer blends and formulations containing them, to the use of the compounds, compositions and polymer blends as organic semiconductors in, or for the preparation of, organic electronic (OE) devices, especially organic photovoltaic (OPV) devices, perovskite-based solar cell (PSC) devices, organic photodetectors (OPD), organic field effect transistors (OFET) and organic light emitting diodes (OLED), and to OE, OPV, PSC, OPD, OFET and OLED devices comprising these compounds, compositions or polymer blends.

A first object of the present invention is to provide a photoelectric conversion element having a high external quantum efficiency and small variation in response. A second object of the present invention is to provide an imaging element, an optical sensor, and a compound related to the photoelectric conversion element.

The photoelectric conversion element includes, in the following order, a conductive film, a photoelectric conversion film, and a transparent conductive film, in which the photoelectric conversion film contains a compound represented by Formula (1).

##STR00001##

[Problem] Provided are a photoelectric conversion device and an imaging apparatus capable of improving quantum efficiency and a response speed.

[Solving means] A first photoelectric conversion device according to one embodiment of the present disclosure includes a first electrode, a second electrode opposed to the first electrode, and a photoelectric conversion layer. The photoelectric conversion layer is provided between the first electrode and the second electrode and includes at least one type of one organic semiconductor material having crystallinity. Variation in a ratio between horizontally-oriented crystal and vertically-oriented crystal in the photoelectric conversion layer is three times or less between a case where film formation of the one organic semiconductor material is performed at a first temperature and a case where the film formation of the one organic semiconductor material is performed at a second temperature. The second temperature is higher than the first temperature.

The present invention is to provide a photoelectric conversion element with an excellent sensitivity, an imaging element, an optical sensor, and a compound. The photoelectric conversion element of the present invention includes, in the following order, a conductive film, a photoelectric conversion film, and a transparent conductive film in which the photoelectric conversion film contains a compound represented by Formula (1) and a coloring agent.

##STR00001##

Provided are a photoelectric conversion element including a first electrode having a photosensitive layer including a light absorber on a conductive support and a second electrode facing the first electrode, in which the light absorber includes a compound having a perovskite-type crystal structure, and a compound represented by a specific formula is provided on a surface of the first electrode, a solar cell using the same, and a method for manufacturing a photoelectric conversion element including bringing a first electrode having a photosensitive layer in which a compound having a specific perovskite-type crystal structure is included as a light absorber on a conductive support into contact with a liquid containing a compound represented by specific Formula (AC).

Provided is a photodetector having a small dark current ratio. A photodetector includes a first electrode, a second electrode, and an active layer provided between the first electrode and the second electrode, the active layer contains a p-type semiconductor material and an n-type semiconductor material, the p-type semiconductor material contains a polymer having the highest occupied molecular orbital (HOMO) of −5.45 eV or less, and the n-type semiconductor material contains a non-fullerene compound. It is preferable that the polymer contained in the p-type semiconductor material contains a constitutional unit DU having an electron donating property and a constitutional unit AU having an electron accepting property, and the non-fullerene compound contains a moiety DP having an electron donating property and a moiety AP having an electron accepting property.

A compound having the following formula:

##STR00001##

which can also be embedded into a conjugated oligomeric of polymeric backbone, is proposed for optical and electro optical applications.

A composition including a compound represented by the following formula (12) and a compound represented by the following formula (21) (provided that the compound represented by the formula (12) is different from the compound represented by the formula (21)).

##STR00001##