The present invention relates to an Organic Semiconducting Compound and organic photoelectric components using the same. The innovative chemical structure of the Organic Semiconducting Compound allows improved infrared light range response values and renders it suitable for uses in the organic photoelectric components, such as OPD, OFET, or OPV due to its broadened absorbance wavelength range and improved external quantum efficiency.

A light-receiving device in which an increase in driving voltage is inhibited is provided. Any of the following light-receiving devices is provided: a light-receiving device that includes a light-receiving layer between a pair of electrodes and in which the light-receiving layer includes an active layer, a buffer layer, and an electron-transport layer, the buffer layer is between the active layer and the electron-transport layer and is in contact with the active layer, and the buffer layer includes an organic compound having an electron-withdrawing group; a light-receiving device that includes a light-receiving layer between a pair of electrodes and in which the light-receiving layer includes an active layer, a buffer layer, and an electron-transport layer, the buffer layer is between the active layer and the electron-transport layer and is in contact with the active layer, and the buffer layer includes a heteroaromatic compound having an electron-withdrawing group.

An organic compound is described. An organic electroluminescence device comprises the organic compound, as a host of an emissive layer, or as a hole blocking layer. The organic compound may increase a half-life or current efficiency of the organic electroluminescence device. The organic compound may lower a driving voltage of the organic electroluminescence device. The mentioned organic compound may have the following formula: ##STR00001## The same definition as described in the present invention.

Disclosed is a highly efficient organic light-emitting device that uses an anthracene derivative having a characteristic structure as a host compound in a light-emitting layer of the organic light-emitting device and includes a capping layer formed using a compound having a characteristic structure in the organic light-emitting device.

An organic optoelectronic device comprises a first electrode, a first carrier transport layer, an active layer, a second carrier transport layer and a second electrode. The first electrode is a transparent electrode. The active layer includes a low band gap small molecule material which includes a structure of Formula I:

##STR00001##

Wherein, o, m, n, p, x and y are independently selected from any integer from 0 to 2. Ar.sup.0, Ar.sup.1 and A.sup.2 are electron-donating groups. A.sup.0 is a heteroatom-containg tricyclic structure with or without substituents, and. the heteroatom comprises at least one of S, N, Si, and Se. A.sup.1 is an electron withdrawing group with or without substituents, and the structure of the electron-withdrawing group comprises at least one of S, N, Si, Se, C═O, —CN, SO.sub.2. The organic optoelectronic device of the present invention has good external quantum efficiency and dark current performance.

Provided is a stacked organic electroluminescence device. At least one light-emitting unit of the stacked organic electroluminescent device includes an organic layer including a specific combination of a P-type material with a deep LUMO energy level and a hole transporting material with a deep HOMO energy level. Meanwhile, a P-type material is used as the buffer layer of the charge generation layer between the light-emitting units. The device can offer better device performance and more simplified fabrication process. Further provided is a display assembly including the device.

The invention relates to benzimidazole derivatives which are suitable for use in electronic devices, and to electronic devices, in particular organic electroluminescent devices, containing said compounds.

A reliable light-emitting element with low driving voltage is provided. The light-emitting element includes an electron-injection layer between a cathode and a light-emitting layer. The electron-injection layer is a mixed film of a transition metal and an organic compound having an unshared electron pair. An atom of the transition metal and the organic compound form SOMO.

Provided is a photodetector having a small dark current ratio. A photodetector includes a first electrode, a second electrode, and an active layer provided between the first electrode and the second electrode, the active layer contains a p-type semiconductor material and an n-type semiconductor material, the p-type semiconductor material contains a polymer having the highest occupied molecular orbital (HOMO) of −5.45 eV or less, and the n-type semiconductor material contains a non-fullerene compound. It is preferable that the polymer contained in the p-type semiconductor material contains a constitutional unit DU having an electron donating property and a constitutional unit AU having an electron accepting property, and the non-fullerene compound contains a moiety DP having an electron donating property and a moiety AP having an electron accepting property.

Light-emitting devices comprising light-emitting diodes are described herein. These devices may include a substrate, a reflective anode, a hole-injection layer, a hole-transport layer, an emissive component, an electron-transport layer, a cathode, an enhancement layer, and a light-scattering layer. The emissive component may include first and second fluorescent light-emitting layers with an intervening phosphorescent light-emitting layer or first and second phosphorescent light-emitting layers with an intervening fluorescent light-emitting layer.