A method for making a SnO thin film includes steps of: providing a substrate and a tin oxide sputtering target; spacing the substrate and the tin oxide sputtering target from each other; and sputtering the SnO thin film on the substrate by using a magnetron sputtering method. The tin oxide sputtering target comprises uniformly mixed elemental Sn and SnO.sub.2. An atomic ratio of Sn atoms and O atoms in the tin oxide sputtering target satisfies 1:2<Sn:O≦2:1.

The embodiments of the present disclosure provide a photoelectric sensor and a method of manufacturing the same, and a display panel. The photoelectric sensor includes a transparent substrate, a hole transport layer, a light absorption layer, and an electron transport layer. Disposing the hole transport layer on one side close to the transparent substrate and shielding the hole transport layer by use of the light absorption layer and the electron transport layer avoid the dissolution of molybdenum oxide in the hole transport layer during a cleaning process and reduce the difficulty in manufacturing process of the photoelectric sensor.

A substrate with conductive film includes a base material; and a film of a conductive metal oxide arranged on an upper part of the base material. The film includes, by a top plan view, a first region and a second region, the second region is configured of a same material as the first region, and an electric resistance of the second region is higher than an electric resistance of the first region. The second region includes a part configured by a plurality of cellular sections surrounded by a plurality of fine cracks. In the part, each fine crack has a width of 1 nm to 50 nm, and each cellular section has a largest measure of less than 10 μm.

A color filter is disposed on a substrate. An organic photodiode is disposed on the color filter. The organic photodiode includes an electrode insulating layer having a recess region on the substrate, a first electrode on the color filter, the first electrode filling the recess region of the electrode insulating layer, a second electrode on the first electrode, and an organic photoelectric conversion layer interposed between the first electrode and the second electrode. The first electrode includes a seam extending at a first angle from a side surface of the recess region of the electrode insulating layer.

Provided are a method for preparing an organic electroluminescent device, an organic electroluminescent device and a display apparatus. The method for preparing the organic electroluminescent device includes: providing a substrate; forming, on the substrate, a red light reflective electrode located in a red sub-pixel preparation region, a green light reflective electrode located in a green sub-pixel preparation region, and a blue light reflective electrode located in a blue sub-pixel preparation region; forming a transparent insulating layer on a surface of a side of the red light reflective electrode facing away from the substrate, where the area of the transparent insulating layer is smaller than the area of the red light reflective electrode; and forming a transparent conductive layer on a surface of a side of the transparent insulating layer facing away from the substrate, a surface of the side of the red light reflective electrode facing away from the substrate and not covered by the transparent insulating layer, and a surface of a side of the green light reflective electrode facing away from the substrate.

In order to increase the generation efficiency of a silicon dioxide solar cell, two conductive substrates are arranged so that the conductive surfaces thereof face each other, at least one of the substrates is disposed upon the substrate facing the light entry-side substrate, and an electrolyte is filled between the silicon dioxide particles compact and the light entry-side substrate. Silicon dioxide solar cells having this configuration exhibit a significantly increased short circuit current and open circuit voltage in comparison to solar cells in which the silicon dioxide and the electrolyte are mixed. This configuration can further be improved by disposing a titanium dioxide solar cell or a dye-sensitized titanium dioxide solar cell upon the light entry-side substrate to further increase the short circuit current and the open circuit voltage.

The present invention concerns a device for room temperature reverse-bias operation photo-detection. The device comprising:—a planar first electrode extending in a planar direction;—a second electrode positioned above the first electrode in a direction substantially perpendicular to said planar direction; and—an active region sandwiched between the first and second electrode. The active region consists of a light absorbing perovskite and wherein the light absorbing perovskite is in direct contact with at least one of the first and second electrodes.

The invention provides an optoelectronic device comprising a mixed-anion perovskite, wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions. The invention further provides a mixed-halide perovskite of the formula (I) [A][B][X].sub.3 wherein: [A] is at least one organic cation; [B] is at least one divalent metal cation; and [X] is said two or more different halide anions. In another aspect, the invention provides the use of a mixed-anion perovskite as a sensitizer in an optoelectronic device, wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions. The invention also provides a photosensitizing material for an optoelectronic device comprising a mixed-anion perovskite wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions.

An aspect of the present disclosure is a method that includes, in a first mixture that includes a metal alkoxide and water, reacting at least a portion of the metal alkoxide and at least a portion of the water to form a second mixture that includes a solid metal oxide phase dispersed in the second mixture, applying the second mixture onto a surface of a device that includes an intervening layer adjacent to a perovskite layer such that the intervening layer is between the second mixture and perovskite layer, and treating the second mixture, such that the solid metal oxide phase is transformed to a first solid metal oxide layer such that the intervening layer is positioned between the first solid metal oxide layer and the perovskite layer.

The present invention provides a display panel and a display device thereof. The display panel includes a substrate, a reflective layer, pixel retaining walls, first electrodes, a light emitting layer, and a second electrode. In the present invention, by adjusting refractive indexes of first electrodes in each sub-pixel region with different colors, microcavity effects are used to enhance color saturation of emitted light and component efficiency. In this way, difficulties resulting from using vacuum evaporation methods along with fine masks to prepare hole transport layers with different thickness and problems such as low utilization of evaporation material are prevented.