An imaging element includes a photoelectric conversion section including a first electrode 21, a photoelectric conversion layer 23A including an organic material, and a second electrode 22 that are stacked; an inorganic oxide semiconductor material layer 23B is formed between the first electrode 21 and the photoelectric conversion layer 23A; and an inorganic oxide semiconductor material included in the inorganic oxide semiconductor material layer 23B contains aluminum (Al) atoms, tin (Sn) atoms, zinc (Zn) atoms, and oxygen (O) atoms.

An imaging element of the present disclosure includes a photoelectric conversion section including a first electrode 21, a photoelectric conversion layer 23A including an organic material, and a second electrode 22 that are stacked; an inorganic semiconductor material layer 23B is formed between the first electrode 21 and the photoelectric conversion layer 23A; and a value ΔEN (=EN.sub.anion−EN.sub.cation) is less than 1.695, and preferably 1.624 or less, which results from subtracting an average value EN.sub.cation of electronegativities of cationic species included in the inorganic semiconductor material layer from an average value EN.sub.anion of electronegativities of anionic species included in the inorganic semiconductor material layer 23B.

A display device includes: a circuit element layer comprising a transistor; a display element layer comprising a first electrode connected to the transistor, a second electrode facing the first electrode, an organic pattern between the first electrode and the second electrode, a pixel defining layer having an opening exposing the first electrode, an auxiliary electrode spaced apart from the opening to cover a portion of the pixel defining layer and connected to the second electrode, a first protection pattern covering the second electrode, and a second protection pattern covering the first protection pattern; and an encapsulation layer covering the display element layer, wherein the first protection pattern and the second protection pattern have stress in directions different from each other.

Polymeric photovoltaic cell (or solar cell) with an inverted structure comprising: an anode; a first anode buffer layer; an active layer comprising at least one photoactive organic polymer as the electron donor and at least one organic electron acceptor compound; a cathode buffer layer; a cathode; wherein between said first anode buffer layer and said active layer a second anode buffer layer is placed comprising a hole transporting material, said hole transporting material being obtained through a process comprising: reacting at least one heteropoly acid containing at least one transition metal belonging to group 5 or 6 of the Periodic Table of the Elements; with at least an equivalent amount of a salt or a complex of a transition metal belonging to group 5 or 6 of the Periodic Table of the Elements with an organic anion, or with an organic ligand; in the presence of at least one organic solvent selected from alcohols, ketones, esters, preferably alcohols. Said polymer photovoltaic cell (or solar cell) with an inverted structure displays high photoelectric conversion efficiency values (η), i.e. a photoelectric conversion efficiency (η) greater than or equal to 4.5%, and good open circuit voltage (Voc), short-circuit current density (Jsc) and fill factor (FF) values. Furthermore, said polymer photovoltaic cell (or solar cell) with an inverted structure is able to maintain said values over time, in particular, in terms of photoelectric conversion efficiency (η).

The present invention relates to a light-emitting layer B comprising a first emitter compound (a) having a non-exited state S0(a), a first excited singlet state S1(a) and a first excited triplet state T1(a); a second emitter compound (b) having a non-exited state S0(b), a first excited singlet state S1(b) and a first excited triplet state T1(b), wherein the energy level of S1(a) is higher than that of S1(b), the energy level of S1(b) is higher than that of T1(b) and wherein the rate of reverse intersystem crossing from T1(a) to S1(a) is higher than the rate of excitation energy transfer from S1(a) to S1(b) and/or the rate of excitation energy transfer from T1(a) to T1(b), and/or wherein the energy level of T1(b) is higher than that of T1(a). Further, the present invention also refers to an opto-electronic device comprising such light-emitting layer B and use thereof.

The embodiment provides a stable patterned transparent electrode with low resistance and simple production, a method of producing the same, and an electronic device using the same. A transparent electrode according to an embodiment is a transparent electrode including a transparent substrate and a plurality of conductive regions disposed on a surface of the transparent substrate and separated from each other by a high resistance region, wherein the conductive regions have a structure in which a first transparent conductive metal oxide layer, a metal layer, a second transparent conductive metal oxide layer, and a graphene-containing layer are laminated in order from the side of the substrate, and the transparent electrode with no compound having a graphene skeleton in the high resistance region can be produced by forming the graphene-containing layer and then patterning.

An organic light-emitting device an improved anode structure and an organic electroluminescent display device using the same are provided. The anode structure has a 3 layers stack structure in which a layer closest to an organic light-emissive layer of the organic light-emitting device is made of a material with a high work function such as 5.1 to 5.3 eV. Thus, hole injection efficiency is improved and occurrence of dark spots is suppressed.

A method for application in a QLED display device is provided for cancelling optical crosstalk occurring in a QLED display panel consisting of M number of anode wires, N number of cathode wires, and M×N number of QLED elements. In case of the method being implemented in the QLED display device, a control unit is configured for controlling a column driver unit to supply a positive bias voltage to at least one QLED element that is addressingly selected. In the meantime, the control unit also controls a low driver unit to supply a reverse bias voltage to each of the QLED elements that are not selected. In such case, when the addressingly-selected QLED element achieves a light emission normally, each of the QLED elements that are not selected is reversely biased for failing to produce optical crosstalk.

A display panel and driving method thereof and a display apparatus. The display panel has a first display area and a second display area, a transmittance of the first display area is greater than a transmittance of the second display area, the display panel includes an array substrate, and a light-emitting layer arranged on the array substrate and includes a first sub-pixel density distribution area arranged corresponding to the first display area, a second sub-pixel density distribution area arranged corresponding to the second display area and a third sub-pixel density distribution area on at least one of the first display area and the second display area and arranged adjacent to a boundary between the first display area and the second display area, in which a third sub-pixel distribution density is between a first sub-pixel distribution density and a second sub-pixel distribution density.

An ionic liquid (IL)-containing perovskite precursor composition includes perovskite precursors; and a salt of a cationic imidazole derivative in which at least one of the two nitrogen atoms in the imidazole ring is linked to a carbon chain bearing a cyano (—C≡N) group. A perovskite solar cell with high stability includes a layer constituted by a perovskite film formed using the perovskite precursor composition.