A display apparatus includes: a substrate including a first area and a second area; and a display element layer including a first display element and a second display element. The first display element includes a first electrode having a first thickness and is located in the first area, and the second display element includes a second electrode having a second thickness, which is less than the first thickness, and is located in the second area. The second display element is provided in plural, and one of the plurality of second display elements and another one of the plurality of second display elements are electrically connected to each other.

An etchant composition includes: an inorganic acid compound at 9.0 wt % to 9.9 wt %; an inorganic salt compound at 5.0 wt % to 10.0 wt %; an organic acid compound at 35 wt % to 45 wt %; a lactate-based compound at 10 wt % to 20 wt %; a nitrogen cyclic compound containing oxygen at 0.1 wt % to 1.0 wt %; and a remaining amount of water such that a total weight of the etchant composition is 100 wt %, wherein the inorganic acid compound is an etchant composition having an acid dissociation constant (pKa) value of −1.0 to −3.0.

The present invention is directed to a method for preparing a device, the method comprising: forming a first layer on top of a first electrode, the layer comprising a metal oxide that is formed by the deposition of a metal oxide precursor composition that can be directly patterned by means of exposure to electromagnetic radiation to form a patterned metal oxide layer, optionally forming a second electrode over the first device layer, wherein the method further includes optionally forming a layer comprising quantum dots on top of the first layer or after formation of the first layer, and to a device comprising a first layer comprising a metal oxide prepared by the method of the invention.

The present invention provides a display panel and a manufacturing method thereof. The display panel includes a substrate, a light-shielding metal block and a transparent conductive block disposed on the substrate, a buffer layer disposed on the substrate, the light-shielding metal block, and the transparent conductive block, and an active layer pattern disposed on the buffer layer. The active layer pattern comprises a first conductive block, the first conductive block is disposed opposite to the transparent conductive block, the first conductive block is conductively formed by a semiconductor material, and the transparent conductive block and the first conductive block constitute two electrodes of a capacitor.

A display panel and a manufacturing method thereof, and a display apparatus are provided. The display panel includes: a base substrate, a plurality of pixels, and a drive circuit. At least one of the pixels includes a light-emitting device; the light-emitting device includes an anode electrode and a light-emitting layer; the anode electrode includes a first transparent conductive layer and a metal layer, the first transparent conductive layer completely covers the metal layer, and an orthographic projection of the metal layer on the base substrate is located in an orthographic projection of the first transparent conductive layer on the base substrate; the light-emitting layer is stacked with the anode electrode and is located on a side of the first transparent conductive layer facing away from the metal layer; the drive circuit is located between the base substrate and the anode electrode.

The invention relates to an optoelectronic and/or photoelectrochemical device including a conductive support layer, n-type semiconductor, a sensitizer or light-absorber layer, a hole transporting layer, a spacer layer and a back contact, wherein the n-type semiconductor is in contact with the sensitizer or light-absorber layer, the sensitizer or light-absorber layer includes a perovskite or metal halide perovskite material, the hole transporting layer is in direct contact with the sensitizer or light-absorber layer and includes an inorganic hole transporting material or inorganic p-type semiconductor, the spacer layer is between the hole transporting layer and the back contact and includes a material being different from the inorganic hole transporting material and the material of the back contact.

The invention relates to an organic electronic component comprising a cathode, an anode, at least one light-emitting layer which is arranged between the anode and the cathode, a first layer, which comprises a first matrix material and a dopant, a second layer, which comprises a second matrix material, wherein the first layer is arranged between the second layer and the anode, wherein the second layer is arranged between the anode and the at least one light-emitting layer, wherein the dopant is a fluorinated sulfonimide metal salt of the following formula 1: ##STR00001##

A transparent conductor includes a transparent substrate, a first metal oxide layer, a metal layer containing a silver alloy, a third metal oxide layer, and a second metal oxide layer in the order presented. The first metal oxide layer is composed of a metal oxide which is different from ITO, the second metal oxide layer contains ITO, and the work function of the surface of the second metal oxide layer opposite to the metal layer side is 4.5 eV or higher.

A composition may include a compound, a film may include the composition, an organic layer of an organic sensor and/or photoelectric diode may include the compound, and the film, organic sensor, and/or photoelectric diode may be included in an electronic device.

A display substrate and a manufacturing method therefor, and a display device. The display substrate comprises: a substrate, the substrate comprising a blind hole area; a buffer layer covering one side of the substrate; an organic film layer provided on the surface of the buffer layer away from the substrate and having a first opening in the blind hole area; a passivation layer provided on the side of the organic film layer away from the substrate and having a second opening in the blind hole area; and a transparent electrode layer covering the passivation layer and the buffer layer in the second opening.