An organic electroluminescence element in an embodiment according to the present invention includes a first electrode, a third electrode including a region overlapping the first electrode, a first insulating layer between the first electrode and the third electrode, a second insulating layer between the first insulating layer and the third electrode, an electron transfer layer between the first insulating layer and the third electrode, a light emitting layer, containing an organic electroluminescence material, between the electron transfer layer and the third electrode, and a second electrode located between the first insulating layer and the second insulating layer and electrically connected with the electron transfer layer. The organic electroluminescence element includes an overlap region where the third electrode, the light emitting layer, the electron transfer layer, the first insulating layer and the first electrode overlap each other in an opening of the second insulating layer.

The present disclosure provides an organic light emitting display substrate and a method for manufacturing the same. The organic light emitting display substrate includes a substrate, and a drive transistor and an organic light emitting diode disposed on the substrate. In a direction away from the substrate, the organic light emitting diode successively includes: a first reflective electrode, an organic light emitting layer, and a second reflective electrode. A drain of the drive transistor is electrically coupled to the first reflective electrode. The organic light emitting display substrate further includes a light guide layer. One side surface of the light guide layer is the light incident surface. The light incident surface is disposed opposite to the light outgoing surface of the organic light emitting diode so that the light emitted from the light outgoing surface enters the light guide layer.

A light emitting diode comprises first and second electrodes facing each other; a first charge generation layer between the first and second electrodes; a first emitting stack including a first emitting material layer between the first electrode and the first charge generation layer and a first electron transporting layer between the first emitting material layer and the first charge generation layer; and a second emitting stack including a second emitting material layer between the first charge generation layer and the second electrode and a second electron transporting layer between the second emitting material layer and the second electrode, wherein the first charge generation layer has an electron mobility lower than that of the first electron transporting layer.

An optical device (30) includes a light-emitting device (10) and a sensor device (20) (light-receiving element (220)). The light-emitting device (10) includes a substrate (100), a plurality of light-emitting portions (140), and light-transmitting portions (106). The light-emitting portions (140) are located at a first surface (100a) side of the substrate (100). The light-emitting portion (140) has a light-shielding portion (102: first light-shielding portion). The light-shielding portion (102) is located at a position to cover light emitted from the adjacent light-emitting portion (140: first light-emitting portion) and emitted to the first surface (100a) side at at least any angle between 70 to 90 from the light-emitting device (10).

An organic light-emitting diode display is provided. The organic light-emitting diode display has an anode layer, an organic layer disposed on the anode layer, and a cathode layer disposed on the organic layer and comprising a plurality of cathode lines. The organic light-emitting diode display comprises a plurality of pixel columns corresponding to the cathode lines. Pixels in the same pixel column have the same color, and the cathode lines corresponding to the pixel columns having different colors are inputted with different cathode voltages, respectively.

An electronic device includes an iris camera; and an organic light-emitting diode (OLED) display screen, in which an infrared OLED is integrated, wherein the infrared OLED is configured to emit infrared light to assist the iris camera in acquisition of an iris image.

The disclosure provides a flexible display device, including: a flexible substrate, including a display area; and a first frame area, a second frame area, a third frame area and a fourth frame area located at the four sides of the display area, the first frame area and the fourth frame area being opposite to each other, and the second frame area and the third frame area being opposite to each other, a bent line arranged in the second frame area and the third frame area; an organic light emitting layer arranged on the display area; a packaging layer arranged on the organic light emitting layer, the first frame area, the second frame area, the third frame area and the fourth frame area; wherein the flexible substrate and the packaging layer are bent upwards or downwards along the bent lines arranged in the second frame area and the third frame area.

A light emitting display device includes a display panel in which a plurality of pixels is disposed, each of the plurality of pixels includes a plurality of sub pixels, each of the plurality of sub pixels includes: a first light emitting diode configured to emit light by a first driving current; a first lens which refracts light emitted from the first light emitting diode; a second light emitting diode configured to emit light by a second driving current; a second lens which refracts light emitted from the second light emitting diode; a driving transistor configured to control the driving currents, and a capacitor which is connected to the driving transistor, and each of an anode electrode of the first light emitting diode and an anode electrode of the second light emitting diode may be initialized to a voltage different from a voltage which is applied to the capacitor.

A display substrate including a base substrate including a plurality of pixel areas, each of the plurality of pixel areas including an emission area and a transmission area, a pixel circuit layer disposed in the emission area and including at least one transistor, a pixel electrode disposed on the pixel circuit layer and connected to the pixel circuit layer, a hole injection layer selectively disposed on the pixel electrode in the emission area, an emission layer disposed on the hole injection layer of the emission area, an electron injection layer disposed on the base substrate on which the emission layer is disposed; and a common electrode disposed on the base substrate on which the electron injection layer is disposed.

A first transistor, a second transistor, a third transistor, a fourth transistor are provided. In the first transistor, a first terminal is electrically connected to a first wiring; a second terminal is electrically connected to a gate terminal of the second transistor; a gate terminal is electrically connected to a fifth wiring. In the second transistor, a first terminal is electrically connected to a third wiring; a second terminal is electrically connected to a sixth wiring. In the third transistor, a first terminal is electrically connected to a second wiring; a second terminal is electrically connected to the gate terminal of the second transistor; a gate terminal is electrically connected to a fourth wiring. In the fourth transistor, a first terminal is electrically connected to the second wiring; a second terminal is electrically connected to the sixth wiring; a gate terminal is connected to the fourth wiring.