A compound containing Sn, Te and Mg, and further containing either one or both of Sb and Bi.

A stannide thermoelectric conversion module includes a thermoelectric conversion element, and an electrode material bonded to the thermoelectric conversion element with a bonding material therebetween, the thermoelectric conversion element is a stannide thermoelectric conversion element including a thermoelectric conversion part containing a stannide compound having composition represented by a general expression Mg.sub.2Si.sub.1-xSn.sub.x (where x satisfies a relation of 0.5<x<1 in the general expression), and a first diffusion prevention layer located on a surface of the thermoelectric conversion part, wherein the first diffusion prevention layer includes an Mo layer, and the bonding material is a non-flowable bonding material having no fluidity.

A thermoelectric conversion substrate includes: an insulating substrate including a first surface on one side in a thickness direction of the insulating substrate and a second surface on an opposite side; a plurality of thermoelectric conversion units, each including a first thermoelectric member, a second thermoelectric member, and a first electrode that electrically connects the first thermoelectric member and the second thermoelectric member; and a second electrode. The insulating substrate includes at least one core insulating layer. The second electrode electrically connects the first thermoelectric member of one of the thermoelectric conversion units and the second thermoelectric member of another of the thermoelectric conversion units. The thermoelectric conversion units are electrically connected in series in a manner that the first thermoelectric member and the second thermoelectric member are alternately arranged. A stress relaxation portion is disposed between the first thermoelectric member and the second thermoelectric member.

A thermoelectric module 1 includes: a plurality of electrodes (high temperature side electrodes 11 and low temperature side electrodes 12); thermoelectric conversion elements (p-type element 21 and n-type element 22) arranged between the two electrodes; and a bonding layer 30 disposed between the electrodes and the thermoelectric conversion elements. The bonding layer 30 contains copper-containing particles, copper balls each having a particle diameter of 30 μm or more, an intermetallic compound of copper and tin, and a fired resin.

A thermoelectric element can comprise a thermoelectric body and a multi-layer contact structure. The multi-layer contact structure can contain a first metal layer overlying a surface of the thermoelectric body and a second metal layer directly overlying the first metal layer, wherein the first metal layer and the second metal layer include the same metal, and the first metal layer has a different phase than the second metal layer.

A thermoelectric power generation module includes two substrates, a thermoelectric conversion element, a sealing portion sealing peripheral edges of upper and lower surfaces, a first solder between the upper surface and the sealing portion, and a second solder between the lower surface and the sealing portion. At least one of outer and inner edges of the first solder or the sealing portion is deviated from the first solder or the sealing portion. At least one of outer and inner edges of the second solder or the sealing portion is deviated from the second solder or the sealing portion. At least one of the outer and inner edges of the first solder has a fillet shape between the upper surface and the sealing portion. At least one of the outer and inner edges of the second solder has a fillet shape between the lower surface and the sealing portion.

A thermoelectric module includes a stack structure of a plurality of insulating layers, a plurality of thermoelectric elements formed with the insulating layer interposed therebetween and including a first-type semiconductor device, a second-type semiconductor device, a first electrode connected to the first-type semiconductor device, a second electrode connected to the second-type semiconductor device, and a connection electrode connecting the first-type and second-type semiconductor devices, and a conductive via penetrating through the insulating layer to connect thermoelectric elements adjacent to each other, among the plurality of thermoelectric elements.

In the thermoelectric power generator, a first heat insulation layer is paved on a partial lower surface of a first heat conduction and insulation end surface; a first electric conduction electrode is arranged on a lower surface of the first heat conduction layer and a lower surface of the first heat conduction and insulation end surface; a second electric conduction electrode is arranged opposite to the first electric conduction electrode and adaptive to the first electric conduction electrode; a thermoelectric component includes a plurality of P—N type thermoelectric arms connected in series; and a second heat conduction and insulation end surface is arranged opposite to the first heat conduction and insulation end surface, and an upper surface of the second heat conduction and insulation end surface is in partial contact with the second electric conduction electrode and in partial contact with the second heat insulation layer.

In the thermoelectric power generator, a first heat insulation layer is paved on a partial lower surface of a first heat conduction and insulation end surface; a first electric conduction electrode is arranged on a lower surface of the first heat conduction layer and a lower surface of the first heat conduction and insulation end surface; a second electric conduction electrode is arranged opposite to the first electric conduction electrode and adaptive to the first electric conduction electrode; a thermoelectric component includes a plurality of P—N type thermoelectric arms connected in series; and a second heat conduction and insulation end surface is arranged opposite to the first heat conduction and insulation end surface, and an upper surface of the second heat conduction and insulation end surface is in partial contact with the second electric conduction electrode and in partial contact with the second heat insulation layer.

An electronic device includes a first portion and a second portion, an electric power generating device and a load device. The electronic device is disposed in an opening of a connected space, and the electronic device and a wall have the opening divide the connected space into the first space and the second space. The first portion is located in a first space having a first ambient temperature, and the second portion is located in a second space having a second ambient temperature. The electric power generating device is configured to generate a thermo-electromotive force based on a temperature difference between the first ambient temperature and the second ambient temperature to generate electrical energy. The load device is configured to obtain the electrical energy and operate on the electrical energy.