A multi-chip package includes: an interposer; a first IC chip over the interposer, wherein the first IC chip is configured to be programmed to perform a logic operation, comprising a NVM cell configured to store a resulting value of a look-up table, a sense amplifier having an input data associated with the resulting value from the NVM cell and an output data associated with the first input data of the sense amplifier, and a logic circuit comprising a SRAM cell configured to store data associated with the output data of the sense amplifier, and a multiplexer comprising a first set of input points for a first input data set for the logic operation and a second set of input points for a second input data set having data associated with the data stored in the SRAM cell, wherein the multiplexer is configured to select, in accordance with the first input data set, an input data from the second input data set as an output data for the logic operation; and a second IC chip over the interposer, wherein the first IC chip is configured to pass data associated with the output data for the logic operation to the second IC chip through the interposer.

A thermoelectric power generation module includes two substrates, a thermoelectric conversion element, a sealing portion sealing peripheral edges of upper and lower surfaces, a first solder between the upper surface and the sealing portion, and a second solder between the lower surface and the sealing portion. At least one of outer and inner edges of the first solder or the sealing portion is deviated from the first solder or the sealing portion. At least one of outer and inner edges of the second solder or the sealing portion is deviated from the second solder or the sealing portion. At least one of the outer and inner edges of the first solder has a fillet shape between the upper surface and the sealing portion. At least one of the outer and inner edges of the second solder has a fillet shape between the lower surface and the sealing portion.

A method and/or apparatus of energy harvesting for wearable technology through a thin flexible thermoelectric device is disclosed. A lower conduction layer is formed on top of a lower dielectric layer. An active layer, comprising at least one thin film thermoelectric conduit and a thermal insulator, is formed above the lower conduction layer. An internal dielectric layer is formed above the active layer, and contact holes are drilled above each thermoelectric conduit. An upper conduction layer and upper dielectric layer are formed, connecting the thermoelectric conduits in series. The resulting flexible thermoelectric device generates a voltage when exposed to a temperature gradient.

A thermoelectric element of the present invention comprises a first metal substrate, a first resin layer, a plurality of first electrodes, a plurality of P-type thermoelectric legs and a plurality of N-type thermoelectric legs, a plurality of second electrodes, a second resin layer, and a second metal substrate, wherein the first metal substrate is a low-temperature portion, the second metal substrate is a high-temperature portion, the second resin layer comprises a first layer and a second layer arranged on the first layer, the first and second layers include a silicon (Si)-based resin, and the bonding strength of the first resin layer is higher than the bonding strength of the second resin layer.

A method and/or apparatus of energy harvesting for wearable technology through a thin flexible thermoelectric device is disclosed. A lower conduction layer is formed on top of a lower dielectric layer. An active layer, comprising at least one thin film thermoelectric conduit and a thermal insulator, is formed above the lower conduction layer. An internal dielectric layer is formed above the active layer, and contact holes are drilled above each thermoelectric conduit. An upper conduction layer and upper dielectric layer are formed, connecting the thermoelectric conduits in series. The resulting flexible thermoelectric device generates a voltage when exposed to a temperature gradient.

An apparatus includes an anode of a cell for a battery, a cathode of the cell, an anode thermoelectric device, and a cathode thermoelectric device. The anode thermoelectric device may be operably coupled to the anode of the cell, and the anode thermoelectric device may be connected in electrical series with the anode of the cell. The cathode thermoelectric device may be operably coupled to the cathode of the cell, and the cathode thermoelectric device being connected in electrical series with the cathode of the cell. The cathode thermoelectric device and the anode thermoelectric device may operate as a heat pump system configured to remove heat from the cathode and provide heat to the anode in response to the cell being discharged, and remove heat from the anode and provide heat to the cathode in response to the cell being charged.

A multi-chip package includes: an interposer; a first IC chip over the interposer, wherein the first IC chip is configured to be programmed to perform a logic operation, comprising a NVM cell configured to store a resulting value of a look-up table, a sense amplifier having an input data associated with the resulting value from the NVM cell and an output data associated with the first input data of the sense amplifier, and a logic circuit comprising a SRAM cell configured to store data associated with the output data of the sense amplifier, and a multiplexer comprising a first set of input points for a first input data set for the logic operation and a second set of input points for a second input data set having data associated with the data stored in the SRAM cell, wherein the multiplexer is configured to select, in accordance with the first input data set, an input data from the second input data set as an output data for the logic operation; and a second IC chip over the interposer, wherein the first IC chip is configured to pass data associated with the output data for the logic operation to the second IC chip through the interposer.

A thermoelectric device can comprise at least one first thermoelectric element, at least one second thermoelectric element, and a bridging structure. The bridging structure can include a bridging layer comprising a silver-gallium alloy. The silver-gallium alloy containing a bridging layer can provide flexibility and stress release to the thermoelectric device when subjected to multiple heating cycles, and may have a very low electrical resistance and thermal resistance.

In the thermoelectric power generator, a first heat insulation layer is paved on a partial lower surface of a first heat conduction and insulation end surface; a first electric conduction electrode is arranged on a lower surface of the first heat conduction layer and a lower surface of the first heat conduction and insulation end surface; a second electric conduction electrode is arranged opposite to the first electric conduction electrode and adaptive to the first electric conduction electrode; a thermoelectric component includes a plurality of P-N type thermoelectric arms connected in series; and a second heat conduction and insulation end surface is arranged opposite to the first heat conduction and insulation end surface, and an upper surface of the second heat conduction and insulation end surface is in partial contact with the second electric conduction electrode and in partial contact with the second heat insulation layer.

A flexible thermoelectric device that includes a plurality of pairs of semiconducting legs. The pair of semiconducting legs includes an n-type thermoelectric leg and a p-type thermoelectric leg. The pairs of thermoelectric legs are positioned between two substrates and are electrically connected in series in an alternating sequence between n-type and p-type legs. Both the n-type legs and the p-type legs are made from a binder containing semiconducting materials/particles that give the legs their n-type and p-type properties, respectively. The n-type and p-type legs are directly bonded with an electrode on one of the substrates by the binder. The flexible thermoelectric device nay be fabricated by contacting the electrode with the n-type and p-type legs and curing the binder.