A thermoelectric conversion module includes: a first thermoelectric conversion element group including a first thermoelectric member including a first conductivity-type semiconductor, and a second thermoelectric member including a second conductivity-type semiconductor; a second thermoelectric conversion element group including a third thermoelectric member including the first conductivity-type semiconductor, and a fourth thermoelectric member including the second conductivity-type semiconductor; a first substrate connected to an upper side of the first thermoelectric conversion element group and the second thermoelectric conversion element group; and a second substrate connected to a lower side of the first thermoelectric conversion element group and the second thermoelectric conversion element group. The first thermoelectric member and the second thermoelectric member are electrically connected by a first current path. The third thermoelectric member and the fourth thermoelectric member are electrically connected by a second current path. The first current path is insulated from the second current path.

A thermoelectric material includes a lower part from a bottom surface of the thermoelectric material to a point of 30% of an average thickness of the thermoelectric material and having an average content of carbon atoms of 40 at % or more in the thermoelectric material, and an upper part corresponding to a remaining 70% of the average thickness of the thermoelectric material and having an average content of carbon atoms of 20 at % or less in the thermoelectric material.

A cooling system for thermally conditioning a component which includes a battery and a heat spreader supporting the battery. Multiple thermoelectric devices are bonded to the heat spreader, for example, using solder or braze, which provides improved heat transfer. A cold plate assembly operatively thermally engages the thermoelectric devices.

A thin-film based thermoelectric module includes a flexible substrate having a dimensional thickness less than or equal to 25 μm, and a number of pairs of N-type and P-type thermoelectric legs electrically in contact with one another on the flexible substrate. The thin-film based thermoelectric module also includes a number of conductive interconnects on top of the number of pairs of the N-type and the P-type thermoelectric legs, and an elastomer encapsulating the flexible substrate, the number of pairs of the N-type and the P-type thermoelectric legs and the number of conductive interconnects to render flexibility to the thin-film based thermoelectric module such that an array of equivalent thin-film based thermoelectric modules is completely wrappable and bendable around a system element from which the array is configured to derive thermoelectric power. The thin-film based thermoelectric module is less than or equal to 100 μm in dimensional thickness.

A power generating apparatus according to one embodiment of the present invention includes a duct through which a first fluid passes, a first thermoelectric module and a second thermoelectric module disposed on a first surface of the duct to be spaced apart from each other, a connector disposed between the first thermoelectric module and the second thermoelectric module on the first surface of the duct, and a shield member disposed on the connector on the first surface of the duct, wherein the shield member includes a first face and a second face having a height higher than a height of the first face.

The present invention relates to a metal paste including: a first metal powder including nickel (Ni); a second metal powder including at least one selected from the group consisting of tin (Sn), zinc (Zn), bismuth (Bi), and indium (In); and a dispersing agent, and to a thermoelectric module which adopts a bonding technique using the metal paste.

A thermoelectric conversion module includes thermoelectric conversion elements, and a first insulating circuit board provided with a first insulating layer and a first electrode part formed on one surface of the first insulating layer is disposed on one end side of the thermoelectric conversion elements. The first electrode part includes a first aluminum layer made of aluminum or an aluminum alloy, and a first sintered silver layer which is formed on a surface of the first aluminum layer on a side opposite to the first insulating layer and is formed of a sintered body of silver. The first aluminum layer has a thickness in a range of 50 μm or more and 2000 μm or less. The first sintered silver layer has a thickness of 5 μm or more and a porosity of less than 10% at least in a region where the thermoelectric conversion element is disposed.

Provided is a semiconductor device manufacturing method which can suppress the occurrence of positional deviation or inclination of a semiconductor element when the semiconductor element is fixed so as to be sandwiched-between two insulating substrates. The semiconductor device manufacturing method includes: obtaining a laminated body in which a semiconductor element is temporarily adhered on a first electrode formed on a first insulating substrate with a first pre-sintering layer sandwiched therebetween; temporarily adhering the semiconductor element on a second electrode formed on a second insulating substrate with a second pre-sintering layer sandwiched therebetween, the second pre-sintering layer being provided on a side opposite to the first pre-sintering layer, to obtain a semiconductor device precursor; and simultaneously heating the first pre-sintering layer and the second pre-sintering layer, to bond the semiconductor element to the first electrode and the second electrode.

Provided is a thermoelectric conversion module that improves the solderability between a thermoelectric element layer containing a resin and a solder layer. The thermoelectric conversion module includes a first substrate having a first electrode, a second substrate having a second electrode, a thermoelectric element layer, a solder-receiving layer that directly bonds to the thermoelectric element layer, and a solder layer, wherein the first electrode of the first substrate and the second electrode of the second substrate face each other, and wherein the thermoelectric element layer is formed of a thin film of a thermoelectric semiconductor composition containing a resin, and the solder-receiving layer contains a metal material.

A thermoelectric sintered body according to an embodiment comprises thermoelectric powder, the thermoelectric powder, arranged in a horizontal direction, comprising: a plurality of first powders in the shape of plate-type flakes; and a plurality of second powders in a shape different from that of the first powders, wherein the second powders comprise 5 volume % or less of the total thermoelectric powder.