Patent classifications
H10N10/817
High-performance terbium-based thermoelectric materials
A thermoelectric material, having a formula Tb.sub.xM1.sub.y-xM2.sub.zO.sub.w where M1 is one of Ca, Mg, Sr, Ba and Ra, M2 is at least one of Co, Fe, Ni, and Mn, x ranges from 0.01 to 5; y is 1, 2, 3, or 5; z is 1, 2, 3, or 4; and w is 1, 2, 3, 4, 5, 7, 8, 9, or 14. The thermoelectric material is chemically stable within 5% for one year and is also non-toxic. The thermoelectric material can also be incorporated into a thermoelectric system which can be used to generate electricity from waste heat sources or to cool an adjacent region.
LOGIC DRIVE USING STANDARD COMMODITY PROGRAMMABLE LOGIC IC CHIPS COMPRISING NON-VOLATILE RANDOM ACCESS MEMORY CELLS
A multi-chip package includes: an interposer; a first IC chip over the interposer, wherein the first IC chip is configured to be programmed to perform a logic operation, comprising a NVM cell configured to store a resulting value of a look-up table, a sense amplifier having an input data associated with the resulting value from the NVM cell and an output data associated with the first input data of the sense amplifier, and a logic circuit comprising a SRAM cell configured to store data associated with the output data of the sense amplifier, and a multiplexer comprising a first set of input points for a first input data set for the logic operation and a second set of input points for a second input data set having data associated with the data stored in the SRAM cell, wherein the multiplexer is configured to select, in accordance with the first input data set, an input data from the second input data set as an output data for the logic operation; and a second IC chip over the interposer, wherein the first IC chip is configured to pass data associated with the output data for the logic operation to the second IC chip through the interposer.
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
A semiconductor device is provided. The semiconductor device includes a substrate having a chamber. The semiconductor device also includes a first dielectric layer disposed on the substrate. The semiconductor device further includes a pair of thermocouples disposed on the first dielectric layer. The semiconductor device includes a second dielectric layer disposed on the first dielectric layer and between the thermocouples. The semiconductor device also includes an absorber connected to the thermocouples.
MODULES AND ELEMENTS FOR A THERMOELECTRIC GENERATOR
Thermoelectric elements and modules for thermoelectric generators with low electrical resistance and/or improved thermovoltage, excellent mechanical stability and flexibility. The thermoelectric elements and modules include stack-type thermoelectric legs formed by lamination of at least two layers comprising semiconductive materials. An adhesive layer may be used to laminate the two layers of semiconductive materials and the stack-type thermoelectric legs may be fabricated by solution deposition methods.
Thermoelectric thread for a heating and/or cooling device
A heating and/or cooling device having one or more thermoelectric threads. The thermoelectric thread includes a plurality of individual thermoelectric elements, each thermoelectric element having a first side and a second side. A set of first side electrodes connects at least some of the thermoelectric elements at the first side, and a set of second side electrodes connects at least some of the thermoelectric elements at the second side. An electrically insulative covering at least partially surrounds the plurality of individual thermoelectric elements. The electrically insulative covering is configured to be woven into or otherwise integrated with a fabric.
Thermoelectric module
A thermoelectric module includes a plurality of thermoelectric components, a first electrode and a second electrode. The thermoelectric components have the same type of semiconductor material. The first electrode includes a first parallel connection part and a first serial connection part. The plurality of thermoelectric components is electrically connected to the first parallel connection part and each of the plurality of thermoelectric components is separated from one another. The first serial connection part is configured for being electrically connected to other electrical components. The plurality of thermoelectric components is electrically connected to the second electrode and located between the first parallel connection part and the second electrode.
THERMOELECTRIC MODULE FOR POWER GENERATION AND PRODUCTION METHOD THEREFOR
The invention relates to a thermoelectric module for thermoelectric current generation, in particular in an exhaust gas system of an internal combustion engine, with a base plate and a plurality of thermocouples each with two legs, the thermocouples being electrically connected in series and mounted on the base plate. The invention provides that the base plate consists of a metallic material. This enables a low-cost production, allows substantially larger formats and makes the thermoelectric module mechanically much less sensitive than a conventional base plate made of ceramic. Furthermore, the invention includes a corresponding production method.
THERMOELECTRIC DEVICE
A thermoelectric device according to one embodiment of the present invention comprises: a first substrate; a plurality of P-type thermoelectric legs and a plurality of N-type thermoelectric legs alternately disposed on the first substrate; a second substrate disposed on the plurality of P-type thermoelectric legs and the plurality of N-type thermoelectric legs; a plurality of first electrodes disposed between the first substrate and the plurality of P-type thermoelectric legs and the plurality of N-type thermoelectric legs, and respectively having a P-type thermoelectric leg and N-type thermoelectric leg pair disposed therein; and a plurality of second electrodes disposed between the second substrate and the plurality of P-type thermoelectric legs and the plurality of N-type thermoelectric legs, and respectively having a P-type thermoelectric leg and N-type thermoelectric leg pair disposed therein, wherein a P-type solder layer and N-type solder layer pair and a barrier layer disposed between the P-type solder layer and N-type solder layer pair are disposed on each of the plurality of first electrodes, and a P-type solder layer and N-type solder layer pair and a barrier layer disposed between the P-type solder layer and N-type solder layer pair are disposed on each of the plurality of second electrodes.
THERMOELECTRIC MODULE
A thermoelectric module according to one embodiment of the present invention comprises: a first metal support; a first heat conductive layer arranged on the first metal support and formed from a resin composition including an epoxy resin and an inorganic filler; a second heat conductive layer arranged on the first heat conductive layer and formed from a resin composition including a silicon resin and an inorganic filler a plurality of first electrodes arranged on the second heat conductive layer a plurality of P-type thermoelectric legs and a plurality of N-type thermoelectric legs alternately arranged on the plurality of first electrodes; a plurality of second electrodes arranged on the plurality of P-type thermoelectric legs and the plurality of N-type thermoelectric legs; a third heat conductive layer arranged on the plurality of second electrodes, and made from the same resin composition as the resin composition that forms the first heat conductive layer; and a second metal support arranged on the third heat conductive layer, wherein the second heat conductive layer is arranged to encompass an upper surface of the first heat conductive layer and a side surface of the first heat conductive layer.
THERMOELECTRIC ELEMENT
A thermoelectric element according to an embodiment of the present invention comprises: a first metal substrate; a first resin layer disposed on the first metal substrate and in direct contact with the first metal substrate; a plurality of first electrodes disposed on the first resin layer; a plurality of thermoelectric legs disposed on the plurality of first electrodes; a plurality of second electrodes disposed on the plurality of thermoelectric legs; a second resin layer disposed on the plurality of second electrodes; and a second metal substrate disposed on the second resin layer, wherein the first resin layer comprises a polymeric resin and an inorganic filler and at least a part of side surfaces of the plurality of first electrodes are embedded in the first resin layer.