A heat converter according to one embodiment of the present invention comprises: a plurality of unit modules respectively arranged in a first direction and a second direction that intersects the first direction; and a frame, which supports the plurality of unit modules, allows cooling water to flow in through one surface arranged in the first direction, and allows the cooling water to be discharged through the other surface arranged in the first direction, wherein each unit module includes: a cooling water passage chamber having first and second surfaces arranged to be spaced in the first direction, third and fourth surfaces arranged to be spaced in a third direction that intersects the first direction and the second direction, a fifth surface arranged to be spaced in the second direction such that cooing water flows therein, and a sixth surface from which cooling water is discharged; a first thermoelectric module arranged on the first surface; and a second thermoelectric module arranged on the second surface, the first thermoelectric module includes a plurality of group thermoelectric elements, each group thermoelectric element includes a plurality of thermoelectric elements, which have the same minimum spacing distance from the fourth surface in the third direction, and the plurality of thermoelectric elements in at least one group thermoelectric element of the plurality of group thermoelectric elements are electrically connected to each other.

A thermoelectric element unit is provided. The thermoelectric element unit includes a plurality of thermoelectric elements and a plurality of electrodes embedded in each of the thermoelectric elements by a predetermined number. Additionally, at least one of the plurality of electrodes includes a terminal part that protrudes to an exterior of the thermoelectric element having the at least one electrode embedded among the thermoelectric elements.

A mobile clamp attaches to a steam pipe and converts thermal energy to electric energy. One side of the clamp is generally open to allow for insertion of the steam pipe. During insertion, opposing blocks on either side of the clamp are deflected apart. Each block includes a curved channel extending along the length of the block to receive the steam pipe. Fitting the steam pipe within the channel aligns the clamp on the steam pipe. A biasing force applied to the blocks to return each block to an initial position provides a clamping force on the steam pipe to positively retain the clamp on the pipe. Thermoelectric devices are mounted on the blocks to convert the thermal energy into electrical energy. Thermal energy is transmitted from the steam, through the steam pipe, through the block pressed against the steam pipe, and to the thermoelectric device.

There are two parts to build fusion carbon metal interconnects. First are the fusing metals/alloys, typically in the Martensite phase and lacking carbon. Second are carbonized materials that have carbon infused. These carbonized materials may be referred to as carbon donating materials. Both parts can be interchanged as the substrate or mounted component, or the parts can form linear interface connections. The finished interfaces have very low electrical resistance and/or zero interface electrical resistance. The interconnect circuit topography materials and connections are endless and is dependent on circuit design. One example of such interface is a solderless thermoelectric device capable of use at higher operating temperatures as compared to conventional low temperature solders thus allowing the thermoelectric device to be used in a Seebeck device, for example. The thermoelectric device forms a fusion layer between a copper metal layer and a semiconductor wafer layer to create a true metallurgical bond.

A thermoelectric device according to an embodiment of the present invention comprises: a first metal support; a first bonding layer disposed on the first metal support; a first resin layer disposed on the first bonding layer; a plurality of first electrodes arranged on the first resin layer; a plurality of P-type thermoelectric legs and a plurality of N-type thermoelectric legs arranged on the plurality of first electrodes; a plurality of second electrodes arranged on the plurality of P-type thermoelectric legs and the plurality of N-type thermoelectric legs; a second resin layer disposed on the plurality of second electrodes; a second bonding layer disposed on the second resin layer; and a second metal support disposed on the second bonding layer, wherein the thermoelectric device further comprises at least one dummy electrode disposed on the first resin layer, and the at least one dummy electrode is disposed on the side of at least one of the outermost row and the outermost column of the plurality of first electrodes.

A thermoelectric element according to one embodiment of the present invention comprises: a first substrate; a plurality of P-type thermoelectric legs and a plurality of N-type thermoelectric legs that are alternately arranged on the first substrate; a second substrate disposed on the plurality of P- and N-type thermoelectric legs; and a plurality of electrodes that connect the plurality of P- and N-type thermoelectric legs in series, wherein the plurality of electrodes include a plurality of first electrodes disposed between the first substrate and the plurality of P- and N-type thermoelectric legs, and a plurality of second electrodes disposed between the second substrate and the plurality of P- and N-type thermoelectric legs, and grains constituting at least one of the plurality of first and second electrodes grow in the direction from the first substrate to the second substrate.

A thermoelectric conversion substrate includes an insulating substrate and at least one thermoelectric conversion unit. The insulating substrate has a first surface and a second surface at both sides of the insulating substrate in a thickness direction. The at least one thermoelectric conversion unit is incorporated in the insulating substrate. The at least one thermoelectric conversion unit includes a first thermoelectric member, a second thermoelectric member, and a first electrode disposed on the first surface of the insulating substrate. The first thermoelectric member includes a first tubular member having insulation property and a first semiconductor filled in the first tubular member. The second thermoelectric member includes a second tubular member having insulation property and a second semiconductor filled in the second tubular member. The second semiconductor has carriers different from carriers of the first semiconductor. The first electrode electrically connects the first semiconductor of the first thermoelectric member to the second semiconductor of the second thermoelectric member.

A thermoelectric conversion module includes: a substrate; a plurality of thermoelectric elements including an N-type element and a P-type element; a bonding layer including silver and disposed between the substrate and the plurality of thermoelectric elements; a first electrode that connects the N-type element with the bonding layer, the first electrode including a first nickel layer and an aluminum layer that is disposed between the first nickel layer and the N-type element; and a second electrode that connects the P-type element with the bonding layer, the second electrode including a second nickel layer.

Provided is a thermoelectric conversion module, in which n-type thermoelectric conversion elements and p-type thermoelectric conversion elements are formed of materials having different thermal expansion coefficients, one surface sides of the n-type thermoelectric conversion elements and one surface sides of the p-type thermoelectric conversion elements are aligned and joined on one surface side of an insulating substrate, and thermal conductive members are formed on other surface sides of the n-type thermoelectric conversion elements and other surface side of the p-type thermoelectric conversion elements, respectively.

A multi-chip package includes: an interposer; a first IC chip over the interposer, wherein the first IC chip is configured to be programmed to perform a logic operation, comprising a NVM cell configured to store a resulting value of a look-up table, a sense amplifier having an input data associated with the resulting value from the NVM cell and an output data associated with the first input data of the sense amplifier, and a logic circuit comprising a SRAM cell configured to store data associated with the output data of the sense amplifier, and a multiplexer comprising a first set of input points for a first input data set for the logic operation and a second set of input points for a second input data set having data associated with the data stored in the SRAM cell, wherein the multiplexer is configured to select, in accordance with the first input data set, an input data from the second input data set as an output data for the logic operation; and a second IC chip over the interposer, wherein the first IC chip is configured to pass data associated with the output data for the logic operation to the second IC chip through the interposer.