A silicide-based alloy material and a device in which the silicide-based alloy material is used are disclosed. The silicide-based alloy material can reduce environmental impact and provide high thermoelectric FIGURE of merit at room temperature. Provided is a silicide-based alloy material comprising, as major components, silver, barium and silicon, wherein atomic ratios of elements that constitute the alloy material are as follows: 9 at %≤Ag/(Ag+Ba+Si)≤27 at %, 20 at %≤Ba/(Ag+Ba+Si)≤53 at %, and 37 at %≤Si/(Ag+Ba+Si)≤65 at %, where Ag represents a content of the silver, Ba represents a content of the barium and Si represents a content of the silicon, and the silicide-based alloy material has an average grain size of less than or equal to 20 μm.

The purpose of the present invention is to provide a highly accurate and highly reliable physical quantity sensor wherein an error due to stress applied to a sensor element of the physical quantity sensor is reduced. This physical quantity sensor device is provided with: a hollow section formed in a Si substrate; an insulating film covering the hollow section; and a heating section formed in the insulating film. The sensor device is also provided with a detection element that detects the temperature of the insulating film above the hollow section, the detection element is provided with a first silicon element and a second silicon element, and the first silicon element and the second silicon element are doped with different impurities, respectively.

An adverse event-resilient network system consisting of autonomously powered and mobile nodes in communication with each other either through radio, light or other electromagnetic signals or through a physical connection such as through wiring, cables or other physical connected methods capable of carrying information and communication signals. The nodes powered by an energy generator comprising multiple data, information and voice gathering, receiving and emitting devices as well as mechanical, optical and propulsion devices.

The present disclosure provides a thermoelectric conversion material having a composition represented by a chemical formula of Li.sub.2−a+bMg.sub.1−bSi. In this thermoelectric conversion material, either requirement (i) in which 0≤a≤0.0001 and 0.0001≤b≤0.25-a or requirement (ii) in which 0.0001≤a≤0.25 and 0≤b≤0.25-a is satisfied. The thermoelectric conversion material has an Li.sub.8Al.sub.3Si.sub.5 type crystalline structure.

The invention relates to a handle for a cooking vessel that includes at least one thermoelectric generator. The thermoelectric generator includes at least a first contact surface thermally connected to a heat sink and the heat sink is formed from a material that undergoes a phase transition when heated to temperatures varying between 50° C. and 70° C.

Disclosed is a compound semiconductor material with excellent performance and its utilization. The compound semiconductor may be expressed by Chemical Formula 1 below:

M1.sub.aCo.sub.4Sb.sub.12-xM2.sub.x   Chemical Formula 1

where M1 and M2 are respectively at least one selected from In and a rare earth metal element, 0≦a≦1.8, and 0≦x≦0.6.

Provided is a silicon bulk thermoelectric conversion material in which thermoelectric performance is improved by reducing the thermal conductivity as compared with the prior art. In the silicon bulk thermoelectric conversion material, the ZT is greater than 0.2 at room temperature with the elemental silicon. In the silicon bulk thermoelectric conversion material, a plurality of silicon grains have an average of 1 nm or more and 300 nm or less, a first hole have an average of 1 nm or more and 30 nm or less present in the plurality of silicon grains and surfaces of the silicon grains, and a second hole have an average of 100 nm or more and 300 nm or less present between the plurality of silicon grains, wherein the aspect ratio of a crystalline silicon grain is less than 10.

This disclosure provides systems, methods, and apparatus related to inorganic halide perovskite nanowires. In one aspect, a first solution comprising cesium oleate or rubidium oleate in a first organic solvent is provided. A second solution comprising a lead halide and a surfactant in a second organic solvent is provided. The halide is selected from a group consisting of chlorine, bromine, and iodine. The first solution and the second solution are mixed. A reaction between the cesium oleate or the rubidium oleate and the lead halide forms a plurality of nanowires comprising an inorganic lead halide perovskite.

Disclosed are methods for the manufacture of n-type and p-type filled skutterudite thermoelectric legs of an electrical contact. A first material of CoSi.sub.2 and a dopant are ball-milled to form a first powder which is thermo-mechanically processed with a second powder of n-type skutterudite to form a n-type skutterudite layer disposed between a first layer and a third layer of the doped-CoSi.sub.2. In addition, a plurality of components such as iron, and nickel, and at least one of cobalt or chromium are ball-milled form a first powder that is thermo-mechanically processed with a p-type skutterudite layer to form a p-type skutterudite layer “second layer” disposed between a first and a third layer of the first powder. The specific contact resistance between the first layer and the skutterudite layer for both the n-type and the p-type skutterudites subsequent to hot-pressing is less than about 10.0 μΩ.Math.cm.sup.2.

Provided are a thermoelectric material, and a thermoelectric element and a thermoelectric module, each including the thermoelectric material. The thermoelectric material, according to some embodiments includes an n-doped metal halide compound having a zero-dimensional (0D) electronic system. The thermoelectric material has a significantly low electrical thermal conductivity and improved electron conductivity and thus may enhance thermoelectrical performance.