To provide a thermoelectric conversion module member which has a high connecting property between a thermoelectric conversion layer and a diffusion prevention layer and is also excellent in heat resistance.

A thermoelectric conversion module member comprising a thermoelectric conversion layer and a diffusion prevention layer in contact with the above-described thermoelectric conversion layer, wherein the above-described thermoelectric conversion layer is a layer containing a thermoelectric conversion material having a silicon element or a tellurium element, the above-described diffusion prevention layer is a layer containing a metal and the same thermoelectric conversion material as that contained in the above-described thermoelectric conversion layer, and the amount of the above-described thermoelectric conversion material in the above-described diffusion prevention layer is 10 to 50 parts by weight with respect to 100 parts by weight of the above-described metal.

The present disclosure relates to a thermoelectric material, and more specifically to a superlattice thermoelectric material and a thermoelectric device using the same. The superlattice thermoelectric material has a composition of a following Chemical Formula 1:
(AX).sub.n(D.sub.2X′.sub.3).sub.m  ,<Chemical Formula 1> wherein, in the Chemical Formula 1, A is at least one of Ge, Sn, and Pb, X is a chalcogen element, and at least one of S, Se, and Te, D is at least one of Bi and Sb, each of n and m is an integer between 1 and 100, and A or X is at least partially substituted with a dopant.

A thermoelectric module includes: unit thermoelectric materials including N-type thermoelectric materials and P-type thermoelectric materials and arranged on one surface of a first substrate; first electrodes each electrically connected to one end of a respective one of the N-type thermoelectric materials or to one end of a respective one of the P-type thermoelectric materials; second electrodes each disposed to be spaced apart from the other end of the respective one of the N-type thermoelectric materials and the other end of the respective one of the P-type thermoelectric materials by a predetermined gap; and a second substrate supporting the second electrodes, in which each of the second electrodes is electrically connected to the second end of the respective one of the N-type thermoelectric materials and the second end of the respective one of the P-type thermoelectric materials when a pressing force is applied to the second substrate.

A transmission electron microscope high-resolution in situ fluid freezing chip includes a lower chip and an upper chip. The lower chip is provided with a support layer, a freezing layer, an insulating layer, an opening, and a center window. The freezing layer is provided with contact electrodes, semiconductor films, and a conductive metal film. The center window is surrounded by the conductive metal film; the contact electrodes are disposed at an edge of the chip. One ends of the semiconductor films are lapped on the conductive metal film, and the other ends are lapped on the electrodes. In the outer edge of the conductive metal film, silicon is etched to form the opening. The support layer covers the opening. The conductive metal film is disposed on the support layer. A plurality of holes are provided in the center window.

Provided are a thermoelectric material having excellent thermoelectric characteristics at room temperature; a method for producing same; and a thermoelectric power generation element. In an embodiment of the present invention, the thermoelectric material contains an inorganic compound containing magnesium (Mg), silver (Ag), antimony (Sb) and copper (Cu), and is represented by the formula Mg.sub.1−aCu.sub.aAg.sub.bSb.sub.c, and the parameters a, b and c satisfy: 0<a≤0.1, 0.95≤b≤1.05 and 0.95≤c≤1.05. The inorganic compound may be an a phase of a half-Heusler structure and have the symmetry of the space group I-4c2.

A thermoelectric element according to an embodiment of the present invention comprises: a first substrate; a first insulating layer disposed on the first substrate; a second insulating layer disposed on the first insulating layer; a first electrode disposed on the second insulating layer; a semiconductor structure disposed on the first electrode; a second electrode disposed on the semiconductor structure; and a second substrate disposed on the second electrode, wherein the composition of the first insulating layer is different from the composition of the second insulating layer, the first insulating layer includes a first region disposed on the first substrate and a second region disposed between the first region and the second insulating layer, and a particle size (D50) of an inorganic filler included in the second region is greater than the particle size (D50) of an inorganic filler included in the first region.

A solid material includes a three-dimensional structure including recesses and a solid portion formed between the recesses, the three-dimensional structure adjusting a thermal conductivity of the solid material by interaction with phonons, wherein a minimum size of the solid portion between the recesses adjacent to each other in plan view of the three-dimensional structure is smaller than or equal to 100 nm, and the solid portion includes a region with a Young's modulus being smaller than or equal to 80% of a Young's modulus of a reference sample that is fabricated by using the same type of material as a material of the solid portion without forming any recesses.

An absorber for absorbing electromagnetic radiation including a first layer with hydrogenated carbon, and a second layer with carbon, and the first layer is less absorbing than the second layer.

A thermoelectric conversion material is composed of a compound semiconductor including a plurality of base material elements, and includes: an amorphous phase; and crystal phases having an average grain size of more than or equal to 5 nm, each of the crystal phases being in a form of a grain. The plurality of base material elements include a specific base material element that causes an increase of a band gap by increasing a concentration of the specific base material element. An atomic concentration of the specific base material element included in the crystal phases with respect to a whole of the plurality of base material elements included in the crystal phases is higher than an atomic concentration of the specific base material element included in the compound semiconductor with respect to a whole of the plurality of base material elements included in the compound semiconductor.

Example systems, apparatuses, and methods are disclosed sensing a flow of fluid using a thermopile-based flow sensing device. An example apparatus includes a flow sensing device comprising a heating structure having a centerline. The flow sensing device may further comprise a thermopile. At least a portion of the thermopile may be disposed over the heating structure. The thermopile may comprise a first thermocouple having a first thermocouple junction disposed upstream of the centerline of the heating structure. The thermopile may further comprise a second thermocouple having a second thermocouple junction disposed downstream of the centerline of the heating structure.