A thermoelectric thin film material including an organic-inorganic hybrid perovskite doped with an organic dopant represented by the general expression ABX.sub.3 where A is an A-site cation, B is a B-site cation, and X is a halide anion. A method of making a thermoelectric thin film material including forming an organic-inorganic hybrid perovskite doped with an organic dopant represented by the general expression ABX.sub.3 where A is an A-site cation, B is a B-site cation, and X is a halide anion. A thermoelectric device comprising a thermoelectric thin film material.

The present disclosure relates to novel two-dimensional halide perovskite materials, and the method of making and using the two-dimensional halide perovskite materials.

The present disclosure relates to novel two-dimensional halide perovskite materials, and the method of making and using the two-dimensional halide perovskite materials.

[Object] To provide a thermoelectric material that reduces, when a thermoelectric conversion module is formed therefrom, contact resistance with an electrode and will not be peeled; the thermoelectric conversion module using the thermoelectric material; a method of producing the same, and a Peltier device.

[Solving Means] A thermoelectric material according to the present invention includes a thermoelectric substance and a solvent, and the solvent has a vapor pressure of 0 Pa or more and 1.5 Pa or less at 25° C., has a storage elastic modulus G′ in a range of 1×10.sup.1 Pa or more and 4×10.sup.6 Pa or less, and has a loss elastic modulus G″ in a range of 5 Pa or more and 4×10.sup.6 Pa or less.

The present invention provides a thermoelectric conversion module which can utilize sunlight and solar heat by using high output charge-transport-type thermoelectric conversion elements. The present invention provides A thermoelectric conversion module which comprises at least a thermoelectric conversion module-element in which charge-transport-type thermoelectric conversion elements are formed and a photothermal conversion substrate containing photothermal conversion material, wherein the thermoelectric conversion module-element comprises an insulating substrate, and n-type and/or p-type charge-transport-type thermoelectric conversion elements are formed on the insulating substrate, wherein the charge-transport-type thermoelectric conversion element comprises a charge transport layer and thermoelectric conversion material layers and electrodes, wherein the photothermal conversion substrate is disposed so that it absorbs external light and converts it into heat and transfers the heat to the electrodes or the thermoelectric conversion material layers disposed on the charge transport layers.

A semiconductor sintered body comprising a polycrystalline body, wherein the polycrystalline body comprises magnesium silicide or an alloy containing magnesium silicide, and the average grain size of the crystal grains constituting the polycrystalline body is 1 μm or less, and the electrical conductivity is 10,000 S/m or higher.

Provided is an easy-to-process thermoelectric conversion device whose shape can be freely changed. The device is provided containing electrodes and an ionic solid, wherein the ionic solid has: an anionic heterometal complex aggregated to form a crystal lattice; and a cationic species present in interstices of the crystal lattice, and wherein the anionic heterometal complex includes: a metal M1 selected from the group consisting of the elements of Groups 8, 9 and 10 of the Periodic Table and Cr and Mn; a metal M2 selected from the group consisting of the elements of Groups 11 and 12 of the Periodic Table; and a ligand.

A thermoelectric element of the present invention comprises a first metal substrate, a first resin layer, a plurality of first electrodes, a plurality of P-type thermoelectric legs and a plurality of N-type thermoelectric legs, a plurality of second electrodes, a second resin layer, and a second metal substrate, wherein the first metal substrate is a low-temperature portion, the second metal substrate is a high-temperature portion, the second resin layer comprises a first layer and a second layer arranged on the first layer, the first and second layers include a silicon (Si)-based resin, and the bonding strength of the first resin layer is higher than the bonding strength of the second resin layer.

Disclosed herein are a flexible thermoelectric module cell for a touch sensor, a touch sensor including the same, and a method of manufacturing the flexible thermoelectric module cell for a touch sensor. The flexible thermoelectric module cell is applicable to cells for touch sensors of various designs, without the need for a person to go directly to an industrially dangerous place.

An integrated flexible thermoelectric device includes p-type carbon nanoparticle regions and n-type carbon nanoparticle regions which are alternately and continuously connected to each other. In particular, the p-type carbon nanoparticle regions and the n-type carbon nanoparticle regions are formed on the one carbon nanoparticle paper.