A thermoelectric conversion module having a further improved thermoelectric performance is provided. The thermoelectric conversion module includes: a base material; and a thermoelectric element layer including a thermoelectric semiconductor composition, wherein the thermoelectric semiconductor composition includes a thermoelectric semiconductor material, a heat resistant resin A, and an ionic liquid and/or inorganic ionic compound, and wherein the base material has a thermal resistance of 0.35 K/W or less.

A thermoelectric conversion module having a further improved thermoelectric performance is provided. The thermoelectric conversion module includes: a base material; and a thermoelectric element layer including a thermoelectric semiconductor composition, wherein the thermoelectric semiconductor composition includes a thermoelectric semiconductor material, a heat resistant resin A, and an ionic liquid and/or inorganic ionic compound, and wherein the base material has a thermal resistance of 0.35 K/W or less.

Provided is a thermoelectric conversion module including a thermoelectric conversion material layer that has high thermoelectric performance, the thermoelectric conversion material layer containing a thermoelectric conversion material with its electrical resistivity reduced. The thermoelectric conversion module includes the thermoelectric conversion material layer including the thermoelectric conversion material containing at least thermoelectric semiconductor particles. The thermoelectric conversion material layer has voids, and when a proportion of the area occupied by the thermoelectric conversion material within the area of a longitudinal cross-section that includes the center portion of the thermoelectric conversion material layer is defined as a filling ratio, the filling ratio is greater than 0.900 and less than 1.000.

Provided is a thermoelectric conversion module including a thermoelectric conversion material layer that has high thermoelectric performance, the thermoelectric conversion material layer containing a thermoelectric conversion material with its electrical resistivity reduced. The thermoelectric conversion module includes the thermoelectric conversion material layer including the thermoelectric conversion material containing at least thermoelectric semiconductor particles. The thermoelectric conversion material layer has voids, and when a proportion of the area occupied by the thermoelectric conversion material within the area of a longitudinal cross-section that includes the center portion of the thermoelectric conversion material layer is defined as a filling ratio, the filling ratio is greater than 0.900 and less than 1.000.

To provide a Peltier cooling element that is excellent in thermoelectric performance and flexibility and can be manufactured easily at low cost. A Peltier cooling element containing a thermoelectric conversion material containing a support having thereon a thin film containing a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat resistant resin, and an ionic liquid, and a method for manufacturing a Peltier cooling element containing a thermoelectric conversion material containing a support having thereon a thin film containing a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat resistant resin, and an ionic liquid, the method containing: coating a thermoelectric semiconductor composition containing thermoelectric semiconductor fine particles, a heat resistant resin, and an ionic liquid, on a support, and drying, so as to form a thin film; and subjecting the thin film to an annealing treatment.

A thermoelectric material is provided. The material can be a grain boundary modified nanocomposite that has a plurality of bismuth antimony telluride matrix grains and a plurality of zinc oxide nanoparticles within the plurality of bismuth antimony telluride matrix grains. In addition, the material has zinc antimony modified grain boundaries between the plurality of bismuth antimony telluride matrix grains.

An n-type material for thermoelectric conversion obtained by doping a p-type material for thermoelectric conversion with a dopant, the p-type material for thermoelectric conversion containing a carbon nanotube and a conductive resin, in which the dopant contains an anion that is a complex ion, an alkali metal cation, and a cation scavenger.

A semiconductor sintered body comprising a polycrystalline body, wherein the polycrystalline body comprises silicon or a silicon alloy, and the average grain size of the crystal grains constituting the polycrystalline body is 1 μm or less, and the electrical conductivity is 10,000 S/m or higher.

A thermoelectric conversion device including an n-type thermoelectric converter, a p-type thermoelectric converter, a high temperature-side electrode with which one end of the n-type thermoelectric converter and one end of the p-type thermoelectric converter are put into contact, a first low temperature-side electrode in contact with another end of the n-type thermoelectric converter, and a second low temperature-side electrode in contact with another end of the p-type thermoelectric converter, wherein in the n-type thermoelectric converter, the side in contact with the high temperature-side electrode is composed of a carrier generation semiconductor containing Mg.sub.2Sn, and in the n-type thermoelectric converter, the side in contact with the first low temperature-side electrode is composed of a carrier transfer semiconductor containing Mg.sub.2Si.sub.1-xSn.sub.x, wherein 0.6≦x≦0.7, and a first n-type dopant.

Thermoelectric (TE) nanocomposite material that includes at least one component consisting of nanocrystals. A TE nanocomposite material in accordance with the present invention can include, but is not limited to, multiple nanocrystalline structures, nanocrystal networks or partial networks, or multi-component materials, with some components forming connected interpenetrating networks including nanocrystalline networks. The TE nanocomposite material can be in the form of a bulk solid having semiconductor nanocrystallites that form an electrically conductive network within the material. In other embodiments, the TE nanocomposite material can be a nanocomposite thermoelectric material having one network of p-type or n-type semiconductor domains and a low thermal conductivity semiconductor or dielectric network or domains separating the p-type or n-type domains that provides efficient phonon scattering to reduce thermal conductivity while maintaining the electrical properties of the p-type or n-type semiconductor.