A thermoelectric conversion material includes: a base material that is a semiconductor composed of a base material element; a first additional element that is an element different from the base material element, has a vacant orbital in a d orbital or f orbital located internal to an outermost shell of the first additional element and forms a first additional level in a forbidden band of the base material; and a second additional element that is an element different from both of the base material element and the first additional element and forms a second additional level in the forbidden band of the base material. A difference is 1 between the number of electrons in an outermost shell of the second additional element and the number of electrons in at least one outermost shell of the base material element.

PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device with an electric power generation function, which can prevent the circuit board from increasing in size.

MEANS TO SOLVE THE PROBLEM: A semiconductor integrated circuit device 200 with an electric power generation function has a semiconductor integrated circuit device and a thermoelectric element 1. The semiconductor integrated circuit device includes a package 210 to house a semiconductor integrated circuit chip 230. The semiconductor integrated circuit chip 230 has a lower surface opposing the circuit board and an upper surface opposing the mounting surface. The thermoelectric element 1 includes a casing unit having a housing unit, a first electrode unit provided inside the housing unit, a second electrode unit provided inside the housing unit, separated from and opposing the first electrode unit in the first direction, and having a work function different from that of the first electrode unit, and a middle unit provided between the first electrode unit and the second electrode unit, and including a nanoparticle having a work function between the work function of the first electrode unit and the work function of the second electrode unit, in the housing unit. The casing unit is provided inside a circuit board 260.

A product includes an array of cold spray-formed structures. Each of the structures is characterized by having a defined feature size in at least one dimension of less than 100 microns as measured in a plane of deposition of the structure, at least 90% of a theoretical density of a raw material from which the structure is formed, and essentially the same functional properties as the raw material. A product includes a cold spray-formed structure characterized by having a defined feature size in at least one dimension of less than 100 microns as measured in a plane of deposition of the structure, at least 90% of a theoretical density of a raw material from which the structure is formed, and essentially the same functional properties as the raw material.

A method for manufacturing a gas sensor may be provided, the method comprising the steps of: preparing a metal nanowire; manufacturing a thermoelectric composite by adding a polymer bead to the metal nanowire, and then mechanically mixing same; manufacturing a thermoelectric layer by hot-pressing the thermoelectric composite; forming a first electrode on the upper surface of the thermoelectric layer, and forming a second electrode on the lower surface of the thermoelectric layer; and disposing a heating catalyst layer on the first electrode.

A method for manufacturing a gas sensor may be provided, the method comprising the steps of: preparing a metal nanowire; manufacturing a thermoelectric composite by adding a polymer bead to the metal nanowire, and then mechanically mixing same; manufacturing a thermoelectric layer by hot-pressing the thermoelectric composite; forming a first electrode on the upper surface of the thermoelectric layer, and forming a second electrode on the lower surface of the thermoelectric layer; and disposing a heating catalyst layer on the first electrode.

According to one embodiment of the present invention, a thermoelectric leg comprises: a thermoelectric material layer comprising Bi and Te; a first metal layer and a second metal layer respectively arranged the thermoelectric material layer; a first adhesive layer arranged between the thermoelectric material layer and the first metal layer and comprising the Te, and a second adhesive layer arranged between the thermoelectric material layer and the second metal layer and comprising the Te; and a first plating layer arranged between the first metal layer and the first adhesive layer, and a second plating layer arranged between the second metal layer and the second adhesive layer, wherein the thermoelectric material layer is arranged between the first metal layer and the second metal layer, the amount of the Te is higher than the amount of the Bi in the thermoelectric material layer.

The present disclosure relates to a thermoelectric material, and more specifically to a superlattice thermoelectric material and a thermoelectric device using the same. The superlattice thermoelectric material has a composition of a following Chemical Formula 1:
(AX).sub.n(D.sub.2X′.sub.3).sub.m  ,<Chemical Formula 1> wherein, in the Chemical Formula 1, A is at least one of Ge, Sn, and Pb, X is a chalcogen element, and at least one of S, Se, and Te, D is at least one of Bi and Sb, each of n and m is an integer between 1 and 100, and A or X is at least partially substituted with a dopant.

A thermoelectric conversion material having a high dimensionless figure of merit ZT includes: a large number of polycrystalline grains which include a skutterudite-type crystal structure containing Yb, Co, and Sb; and an intergranular layer which is between the neighboring polycrystalline grains and includes crystals in which an atomic ratio of O to Yb is more than 0.4 and less than 1.5. A method for manufacturing a thermoelectric conversion material includes: a weighing step; a mixing step; a ribbon preparation step by rapidly cooling and solidifying a melt of the raw materials by using a rapid liquid cooling solidifying method; a first heat treatment step including heat treating in an inert atmosphere with an adjusted oxygen concentration; a second heat treatment step including heat treating in a reducing atmosphere; and manufacturing the thermoelectric conversion material by a pressure sintering step in an inert atmosphere.

A semiconductor substrate contains a clathrate compound of the following General Formula (I). The semiconductor substrate includes a variable-composition layer which includes a pn junction and where composition of the clathrate compound varies along a thickness direction. A rate of change in y in the thickness direction of at least a portion of the variable-composition layer is 1×10.sup.−4/μm or more.
A.sub.xB.sub.yC.sub.46-y   (I) In General Formula (I), A represents at least one element selected from the group consisting of Ba, Na, Sr, and K, B represents at least one element selected from the group consisting of Au, Ag, Cu, Ni, and Al, and C represents at least one element selected from the group consisting of Si, Ge, and Sn, x is 7 to 9, and y is 3.5 to 6 or 11 to 17.

A double layered, flexible thermoelectric generator with direct bonded, double layers of active materials that are directly bonded by heat curing, not soldered nor attached/bonded by an adhesive layer. The thermoelectric device is made from a first substrate and a second substrate, each including an n-type and p-type thermoelectric legs. The first and the second substrate are brought together so that the n-type and p-type thermoelectric legs of the first substrate come into direct contact with, respectively, the n-type and the p-type thermoelectric legs of the second substrate. Each thermoelectric leg may be disposed in a well formed in an insulating layer disposed over contact electrodes supported on the first and second substrate. Each thermoelectric leg may contain a particulate semiconductor and a binder, e.g. a polymer binder. The pairs of legs are bonded together by heat curing.