Film bulk acoustic resonator (FBAR) is provided. An exemplary FBAR includes a substrate; a first insulating material layer on the substrate, the first insulating material layer containing a first cavity; a second insulating material layer on the first insulating material layer, the second insulating material layer containing a second cavity and a third cavity spaced apart from the second cavity, the second cavity and the third cavity both in communication with the first cavity; a resonator sheet covering the second cavity and partially extending over the second insulating material layer; a third insulating material layer over the second insulating material layer and the resonator sheet, the third insulating material layer containing a fourth cavity, the fourth cavity in communication with the third cavity, and the fourth cavity partially overlapping the second cavity; and a capping layer on the third insulating material layer.

An end-surface-reflection surface acoustic wave device, which reflects a surface acoustic wave between first and second end surfaces facing each other, includes a support substrate, an intermediate layer, a piezoelectric layer, and an IDT electrode. The first end surface is located at one end portion in a surface-acoustic-wave propagation direction and extends from a main surface of the piezoelectric layer to at least a portion of the intermediate layer. The second end surface is located at the other end portion in the surface-acoustic-wave propagation direction and extends from the main surface of the piezoelectric layer to at least a portion of the intermediate layer. The support substrate includes support substrate portions that are located outside the first and second end surfaces in the surface-acoustic-wave propagation direction.

An ultrasound vibration device is provided with a stacked transducer in which a plurality of piezoelectric single crystal element layers are stacked between two metal blocks. Since each of the two metal blocks and the plurality of piezoelectric single crystal element layers is fusion-bonded relative to a stack direction by bonding metal having a melting point corresponding to half a Curie point of the plurality of piezoelectric single crystal element layers or below, it is possible to use non-lead material, reduce a processing cost and realize inexpensiveness.

The present invention is related to a stretchable tubular device (1) comprising at least one layer (Lx) of a stretchable polymer, a power supply (2) and a set of electrodes (3a, 3b) connected to said power supply (2). The power supply can supply at least a first level of voltage (V1) to the electrodes so as to modify the natural force (F0) of the stretchable layers to a modified force (F1). The present invention also covers a process for manufacturing such a tubular device and its use as a medical implant.

A microactuator for a suspension is described. The microactuator includes a multi-layer PZT device having a first face and an opposite second face. Each layer of the multi-layer PZT device is configured to operate in its d15 mode when actuated by an actuation voltage. The layers are configured as a stack such that each layer is configured to act in the same direction when actuated such that the first face moves in shear relative to the second face.

A method for producing a piezoelectric stack actuator and a piezoelectric stack actuator are disclosed. To increase service life of a piezoelectric stack actuator made up of individual actuators, includes providing at least two actuators the method and designed and configured to generate a deflection along an axis (A) when electrically activated; and coupling the at least two actuators to form the stack actuator such that deflections of the actuators generated when the actuators are electrically activated are overlaid along a stacking axis (S) and there is a force-coupling of the actuators over at least one coupling area (K) that is smaller than a projection area (P) of the actuator onto a plane (E) perpendicular to the stacking axis.

A substrate includes a substrate main body that includes a first main surface and a second main surface facing the first main surface. First electrode lands are disposed inside a recessed portion of the first main surface of the substrate main body. Second electrode lands are disposed in a region outside the recessed portion. The first electrode land and the second electrode land are connected to different electric potentials.

The present invention relates to a stacked piezoelectric ceramic element and can provide a stacked piezoelectric ceramic element produced by stacking two or more ceramic green sheets, the stacked piezoelectric ceramic element having a structure in which a ceramic porous or defective part constituting the stacked piezoelectric ceramic element is impregnated with an organic resin, thereby improving waterproof performance capable of preventing the deterioration of insulation resistance in a highly humid environment.

The present disclosure relates to the bulk manufacture of transducer arrays, including arrays having at least one 3D printed (or otherwise additive manufactured) acoustic matching layers. In certain implementations, the manufactured transducers include a composite-piezoelectric transducer on a de-matching layer. In one implementation, by producing multiple arrays at once on a common carrier, and by using direct-deposit additive processes for the matching layers, the described processes greatly reduce the number of parts and the number of manual operations.

An ultrasonic transducer includes a stack of flat electrodes between which are interposed ceramic wafers of substantially same surface area as the electrodes, stacked contours of the ceramic wafers and electrode wafers defining substantially flat or cylindrical side faces of the stack. A method of manufacturing the transducer includes: alternatively stacking a ceramic wafer and an electrode wafer, placing between each ceramic wafer and its two neighboring electrodes a composition of which at least 75% by weight, or at least 80% by weight, that includes silver nanoparticles having a grain size of smaller than or equal to 80 nanometers, or smaller than or equal to 60 nanometers; and compressing the stack by heating to a temperature of less than or equal to 280° C., or between 200° C. and 250° C.