The present application relates to stacked piezoelectric composites comprising piezoelectric structures. Suitably, the composites are useful as tissue-stimulating implants, including spinal fusion implants. The present application also relates to methods of making stacked piezoelectric composites.

An electromechanical transducer element includes a first electrode on a diaphragm, an electromechanical transducer film on the first electrode, and a second electrode on the electromechanical transducer film. The electromechanical transducer film has a stacking structure. The electromechanical transducer film has a linear tapered shape that narrows from a first side facing the first electrode to a second side facing the second electrode in a cross section along a stacking direction.

In a non-limiting embodiment, a device may include a substrate, and a hybrid active structure disposed over the substrate. The hybrid active structure may include an anchor region and a free region. The hybrid active structure may be connected to the substrate at least at the anchor region. The anchor region may include at least a segment of a piezoelectric stack portion. The piezoelectric stack portion may include a first electrode layer, a piezoelectric layer over the first electrode layer, and a second electrode layer over the piezoelectric layer. The free region may include at least a segment of a mechanical portion. The piezoelectric stack portion may overlap the mechanical portion at edges of the piezoelectric stack portion.

An end-surface-reflection surface acoustic wave device, which reflects a surface acoustic wave between first and second end surfaces facing each other, includes a support substrate, an intermediate layer, a piezoelectric layer, and an IDT electrode. The first end surface is located at one end portion in a surface-acoustic-wave propagation direction and extends from a main surface of the piezoelectric layer to at least a portion of the intermediate layer. The second end surface is located at the other end portion in the surface-acoustic-wave propagation direction and extends from the main surface of the piezoelectric layer to at least a portion of the intermediate layer. The support substrate includes support substrate portions that are located outside the first and second end surfaces in the surface-acoustic-wave propagation direction.

An electroactive polymer transducer device includes a housing, a base film, plate or wall within the housing, and at least one stack of layers deposited on the base film, plate or wall with at least one housing wall extending from the base film, wherein the at least one stack of layers includes an alternating sequence of one or more plastic electroactive material layers and electrically conductive layers on top of each other. A method of making an electroactive polymer transducer device is also described.

A method for transferring a piezoelectric layer onto a support substrate comprises:providing a donor substrate including a heterostructure comprising a piezoelectric substrate bonded to a handling substrate, and a polymerized adhesive layer at the interface between the piezoelectric substrate and the handling substrate,forming a weakened zone in the piezoelectric substrate, so as to delimit the piezoelectric layer to be transferred,providing the support substrate,forming a dielectric layer on a main face of the support substrate and/or of the piezoelectric substrate,bonding the donor substrate to the support substrate, the dielectric layer being at the bonding interface, andfracturing and separating the donor substrate along the weakened zone at a temperature below or equal to 300 C.

Film bulk acoustic resonator (FBAR) is provided. An exemplary FBAR includes a substrate; a first insulating material layer on the substrate, the first insulating material layer containing a first cavity; a second insulating material layer on the first insulating material layer, the second insulating material layer containing a second cavity and a third cavity spaced apart from the second cavity, the second cavity and the third cavity both in communication with the first cavity; a resonator sheet covering the second cavity and partially extending over the second insulating material layer; a third insulating material layer over the second insulating material layer and the resonator sheet, the third insulating material layer containing a fourth cavity, the fourth cavity in communication with the third cavity, and the fourth cavity partially overlapping the second cavity; and a capping layer on the third insulating material layer.

Methods for forming a film bulk acoustic resonator (FBAR) are provided. In the method, formation of several mutually overlapped and hence connected sacrificial material layers above and under a resonator sheet facilitates the removal of the sacrificial material layers. Cavities left after the removal overlap at a polygonal area with non-parallel sides. This reduces the likelihood of boundary reflections of transverse parasitic waves causing standing wave resonance in the FBAR, thereby enhancing its performance in parasitic wave crosstalk. Further, according to the disclosure, the FBAR is enabled to be integrated with CMOS circuitry and hence exhibits higher reliability.

An elastomer piezoelectric element is configured by alternately disposing first opposite electrodes and second opposite electrodes, and sandwiching a dielectric layer between each first opposite electrode and the corresponding second opposite electrode. Each of the dielectric layers includes a dielectric elastomer sheet-shaped dielectric portion and a conductive elastomer first common electrode connecting the first opposite electrodes to each other or a conductive elastomer second common electrode connecting the second opposite electrodes to each other. The first common electrode and the second common electrode are provided so as to extend from one main surface to another main surface of the dielectric portion, and are joined to the first opposite electrode and the second opposite electrode, respectively, on a joint surface along the dielectric layer.

A substrate includes a substrate main body that includes a first main surface and a second main surface facing the first main surface. First electrode lands are disposed inside a recessed portion of the first main surface of the substrate main body. Second electrode lands are disposed in a region outside the recessed portion. The first electrode land and the second electrode land are connected to different electric potentials.