A piezoelectric device includes a piezoelectric body at least a portion of which can bend and vibrate, an upper electrode on an upper surface of the piezoelectric body and in which distortion of a crystal lattice is reduced as a distance from the upper surface of the piezoelectric body increases, a lower electrode on a lower surface of the piezoelectric body and in which distortion of a crystal lattice is reduced as a distance from the upper surface of the piezoelectric body increases, and a support substrate below the piezoelectric body, in which a recess extending from a lower surface of the support substrate toward the lower surface of the piezoelectric device is provided.

In some embodiments, the present disclosure relates to a processing tool that includes a wafer chuck disposed within a hot plate chamber and having an upper surface configured to hold a semiconductor wafer. A heating element is disposed within the wafer chuck and configured to increase a temperature of the wafer chuck. A motor is coupled to the wafer chuck and configured to rotate the wafer chuck around an axis of rotation extending through the upper surface of the wafer chuck. The processing tool further includes control circuitry coupled to the motor and configured to operate the motor to rotate the wafer chuck while the temperature of the wafer chuck is increased to form a piezoelectric layer from a sol-gel solution layer on the semiconductor wafer.

The invention provides a planarization method, which can make the local flatness of the product to be processed more uniform. The product has a cavity filled with oxide and includes a first electrode layer, a piezoelectric layer and a second electrode layer superposed on the cavity. The first electrode layer covers the cavity and includes a first inclined face around the first electrode layer, and the piezoelectric layer covers the first electrode layer and is arranged on the first electrode layer. The planarization method includes: depositing a passivation layer on the second electrode layer and etching the passivation layer completely until the thickness of the passivation layer is reduced to the required thickness.

An acoustic wave device has a substrate, an optional functional layer disposed over at least a portion of the substrate, a piezoelectric layer disposed over at least a portion of the functional layer and/or substrate, and an interdigital transducer electrode disposed on the piezoelectric layer. The piezoelectric layer has an outer edge spaced inward of an outer edge of the substrate, the outer edge of the piezoelectric layer being tapered at an angle relative to a surface of the substrate to thereby reduce an acoustic reflection magnitude at said outer edge of the piezoelectric layer.

A piezoelectric element, a piezoelectric vibrator and a manufacturing method and a driving method thereof, and an electronic device, and relates to field of piezoelectric technologies. According to the application, a piezoelectric structure is disposed on a first electrode and has an opening allowing the first electrode to penetrate through to be partially exposed, and a heat conducting structure is disposed in the opening. The opening penetrating through the piezoelectric structure is formed in the piezoelectric structure, such that the heating area is decreased when the piezoelectric structure vibrates, and heat generated by the piezoelectric structure is reduced, correspondingly; and the heat conducting structure is additionally disposed in the piezoelectric element to dissipate heat generated when the piezoelectric structure vibrates.

A piezoelectric element, a piezoelectric vibrator and a manufacturing method and a driving method thereof, and an electronic device, and relates to field of piezoelectric technologies. According to the application, a piezoelectric structure is disposed on a first electrode and has an opening allowing the first electrode to penetrate through to be partially exposed, and a heat conducting structure is disposed in the opening. The opening penetrating through the piezoelectric structure is formed in the piezoelectric structure, such that the heating area is decreased when the piezoelectric structure vibrates, and heat generated by the piezoelectric structure is reduced, correspondingly; and the heat conducting structure is additionally disposed in the piezoelectric element to dissipate heat generated when the piezoelectric structure vibrates.

In a MEMS device in which a first electrode layer, a piezoelectric layer, and a second electrode layer are stacked in this order from a first surface side of a substrate, a first wiring layer is stacked on a second surface on a side opposite to a first surface of the substrate and the first electrode layer and the first wiring layer are connected to each other via a through wiring passing through the substrate.

A MEMS component includes, on a substrate, component structures, contact areas connected to the component structures, metallic column structures seated on the contact areas, and metallic frame structures surrounding the component structures. A cured resist layer is seated on frame structure and column structures such that a cavity is enclosed between substrate, frame structure and resist layer. A structured metallization is provided directly on the resist layer or on a carrier layer seated on the resist layer. The structured metallization includes at least external contacts of the component and being electrically conductively connected both to metallic structures and to the contact areas of the component structures.

A piezoelectric device includes a body provided with a first region and a second region lined along a first direction. The first region deformably extends/contracts along the first direction. The second region deformably curves in such a manner that one or the other side in a second direction intersecting the first direction curves outward.

There are provided a composite perovskite powder, a preparation method thereof, and a paste composition for an internal electrode having the same, the composite perovskite powder capable of preventing ions from being eluted from an aqueous system at the time of synthesis while being ultra-atomized, such that when the composite perovskite powder is used as an inhibitor powder for an internal electrode, sintering properties of the internal electrode may be deteriorated, and sintering properties of a dielectric material may be increased; accordingly, connectivity of the internal electrode may be improved, and permittivity and reliability of a multilayer ceramic capacitor (MLCC) may be increased.