A thin-film transistor includes a flexible substrate, an amorphous semiconductor channel layer on the flexible substrate, an organic material piezoelectric stress gate layer adjacent to the amorphous semiconductor channel layer, a gate electrode adjacent to the organic material piezoelectric stress gate layer, and a source electrode and drain electrode coupled to the organic material piezoelectric stress gate layer.

A thin-film transistor includes a flexible substrate, an amorphous semiconductor channel layer on the flexible substrate, an organic material piezoelectric stress gate layer adjacent to the amorphous semiconductor channel layer, a gate electrode adjacent to the organic material piezoelectric stress gate layer, and a source electrode and drain electrode coupled to the organic material piezoelectric stress gate layer.

A wafer scale ultrasonic sensor assembly includes a wafer substrate, an ultrasonic element, first and second protective layers, conductive wires, a transmitting material, an ASIC, a conductive bump, and a soldering portion. The wafer substrate includes a via. The ultrasonic element is exposed to the via. The conductive wires are on the first protective layer and connected to the ultrasonic element. The second protective layer covers the conductive wires, and the second protective layer has an opening corresponding to the ultrasonic element. The transmitting material contacts the ultrasonic element. The ASIC is connected to the wafer substrate, so that the via forms a space between the ASIC and the ultrasonic element. The conductive pillar is in a via defined through the ASIC, the wafer substrate, and the first protective layer, and the conducive pillar is respectively connected to the conductive wires and the soldering portion.

A structure and method for integrating a crystal resonator with a control circuit are disclosed. A lower cavity (120) is formed in a device wafer (100) containing the control circuit (110), and the device wafer (100) is then processed so that the lower cavity (120) is exposed from a back side (100D) of the device wafer (100). A substrate (600) in which an upper cavity (610) is formed at a corresponding location is bonded to the back side (100D) of the device wafer (100) in such a manner that the piezoelectric vibrator (500) is sandwiched between the device wafer (100) and the substrate (600), with the upper cavity (610) and the lower cavity (120) being aligned with each other on opposing side of the piezoelectric vibrator (500), thus resulting in the formation of the crystal resonator and simultaneously achieving the integration of the crystal resonator with the control circuit (110). This crystal resonator is more compact in size, less power-consuming and able to integrate with other semiconductor components with an increased degree of integration.

A method for integrating a crystal resonator with a control circuit and an integrated structure thereof. Integration of the crystal resonator with the control circuit (110) is accomplished by forming a lower cavity (120) in a device wafer (100) containing the control circuit (110) and an upper cavity (310) in a substrate (300), and by bonding the substrate (300) to the device wafer (100) in such a manner that the piezoelectric vibrator is sandwiched between the device wafer (100) and the substrate (300). A semiconductor die (700) can be further bonded to a back side of the same device wafer (100). This results in an increased degree of integration of the crystal resonator and allows on-chip modulation of its parameters. This crystal resonator is more compact in size, less power-consuming and easier to integrate with other semiconductor components with a higher degree of integration, compared with traditional crystal resonators.

Ultrasonic sensing approaches are described with integrated MEMS-CMOS implementations. Embodiments include ultrasonic sensor arrays for which PMUT structures of individual detector elements are at least partially integrated into the CMOS ASIC wafer. MEMS heating elements are integrated with the PMUT structures by integrating under the PMUT structures in the CMOS wafer and/or over the PMUT structures (e.g., in the protective layer). For example, embodiments can avoid wafer bonding and can reduce other post processing involved with conventional manufacturing of PMUT ultrasonic sensors, while also improving thermal response.

An imaging assembly for an intraluminal device is provided. In one embodiment, the imaging assembly includes: an array of ultrasound transducer elements spaced apart by air kerfs; a plurality of buffer elements surrounding the array of ultrasound transducer elements, wherein the plurality of buffer elements are spaced apart by gaps; and a sealing material filling portions of the gaps between the plurality of buffer elements.

A thin-profile ultrasonic sensor includes a piezoelectric material layer having a first surface and a second surface, a plurality of thin film transistors (TFTs) on the first surface, and an electrode layer on the second surface. The first surface and the second surface are on opposite sides facing away from each other. The piezoelectric material layer is configured as a substrate to support the plurality of TFTs, no other substrate being required. The piezoelectric material layer is configured to transmit and receive ultrasonic signals.

A vibration actuator includes an elastic body on which at least one projection is formed and a vibrating body including an electromechanical conversion device, and drives a driven member that is in contact with a contact portion of the projection by causing an end portion of the projection to perform an ellipsoidal movement in response to a combination of two vibration modes generated in the vibrating body when an alternating driving voltage is applied. The elastic body is formed integrally with the projection and a bonding portion between the projection and the electromechanical conversion device. A space is provided between the contact portion and the electromechanical conversion device to which the projection is bonded. The spring portion is provided between the bonding portion and the contact portion and causes the projection to exhibit a spring characteristic when the contact portion is pressed by the driven member.

The structure of a semiconductor device with an array of bioFET sensors, a biometric fingerprint sensor, and a temperature sensor and a method of fabricating the semiconductor device are disclosed. A method for fabricating the semiconductor device includes forming a gate electrode on a first side of a semiconductor substrate, forming a channel region between source and drain regions within the semiconductor substrate, and forming a piezoelectric sensor region on a second side of the semiconductor substrate. The second side is substantially parallel and opposite to the first side. The method further includes forming a temperature sensing electrode on the second side during the forming of the piezoelectric sensor region, forming a sensing well on the channel region, and binding capture reagents on the sensing well.