A method for producing an ultrasonic transducer or ultrasonic transducer array, the method comprising providing or depositing a layer of piezoelectric material on a substrate. The piezoelectric material is a doped, co-deposited or alloyed piezoelectric material. The piezoelectric material comprises: a doped, co-deposited or alloyed metal oxide or metal nitride, the metal oxide or metal nitride being doped, co-deposited or alloyed with vanadium or a compound thereof; or zinc oxide doped, co-deposited or alloyed with a transition metal or a compound thereof. Optionally, the deposition of the layer of piezoelectric material is by sputter coating, e.g. using a sputtering target that comprises a doped or alloyed piezoelectric material. In examples, the layer of piezoelectric material is deposited onto the substrate using high power impulse magnetron sputtering (HIPIMS). Further enhancement may be obtained using substrate biasing (e.g. DC and/or RF) during deposition of the layer of piezoelectric material. In further examples, the substrate is provided on a rotating drum whilst tire layer of piezoelectric material is being deposited.

Data is encoded for identification and labeling using a multitude of nano-electro-mechanical structures formed on a substrate. The number of such structures, their shapes, choice of materials, the spacing therebetween and the overall distribution of the structures result in a vibrational pattern or an acoustic signature that uniquely corresponds to the encoded data. A first group of the structures is formed in conformity with the design rules of a fabrication process used to manufacture the device that includes the structures. A second group of the structures is formed so as not to conform to the design rules and thereby to undergo variability as a result of the statistical variations that is inherent in the fabrication process.

Embodiments of the present invention relates to the field of display technology, and particularly to a pressure force touch panel and a method for manufacturing the same, and a display apparatus including the abovementioned pressure force touch panel. In one embodiment, the pressure force touch panel comprises an array substrate and a color film substrate assembling with each other, and, the color film substrate comprises a black matrix, a plurality of spacers are provided at a side of the color film substrate facing the array substrate; grooves, in one-to-one correspondence with at least some of the spacers, are provided in a side surface of the array substrate facing the color film substrate, and a piezoelectric mechanism electrically connected to a detection circuit is mounted in each of the grooves and is located within a region of projection of the black matrix onto the array substrate; wherein, the piezoelectric mechanism generates an electrical signal when the spacer is pressed against the corresponding piezoelectric mechanism.

An apparatus comprising: a plurality of sensors (501) arranged in an array (500), each sensor having a source electrode (504), a drain electrode (503), a gate electrode (505) and a channel, wherein the source electrode and drain electrode are elongate and the channel has a channel width defined by the longitudinal extent of the source and/or drain electrode and a channel length defined by the separation between the source and drain electrodes; a common conductive or semiconductive layer (506), which may be made of graphene, comprising the channels of the sensors (501) and arranged to extend over the plurality of sensors of the array and configured to be in electrical contact with at least the source electrode and the drain electrode of each sensor; and wherein the source electrode or drain electrode of each sensor forms a substantially continuous sensor perimeter at least along the channel width, which substantially encloses the other electrode of each sensor to inhibit the flow of charge carriers beyond the sensor perimeter to inhibit crosstalk between sensors in the array.

A multi-layered film includes a first electroconductive layer, a dielectric layer, and a second electroconductive layer, which are sequentially layered and disposed on a main surface of a substrate. A lower surface of the dielectric layer comes into contact with an upper surface of the first electroconductive layer, an upper surface and an side surface of the dielectric layer is coated with the second electroconductive layer, and an side end of a portion at which the first electroconductive layer directly overlaps the second electroconductive layer is located inside a side end of the substrate on the main surface of the substrate.

An acoustic transducer, in particular for an ultrasonic sensor, is proposed. The acoustic transducer has a functional group, the functional group encompassing a diaphragm cup and at least one electroacoustic transducer element. The acoustic transducer furthermore has a housing. The diaphragm cup encompasses a vibration-capable diaphragm and an encircling wall, as well as at least one electroacoustic transducer element, the transducer element being embodied to excite the diaphragm to vibrate and/or to convert vibrations of the diaphragm into electrical signals. The diaphragm cup is constituted from a plastic material, the at least one transducer element being integrated into the vibration-capable diaphragm, the transducer element having an electrically active polymer.

The present disclosure relates to semiconductor structures and, more particularly, to artificially oriented piezoelectric films for integrated filters and methods of manufacture. The structure includes: a piezoelectric film with effective crystalline orientations of the polar axis rotated 90 degrees from a natural orientation for planar deposited films; and a conductor pattern formed on a surface of the piezoelectric film.

There is provided a piezoelectric laminate, including: a substrate; and a piezoelectric film formed on the substrate, wherein the piezoelectric film is a film containing an alkali niobium oxide of a perovskite structure represented by a composition formula of (K.sub.1-xNa.sub.x)NbO.sub.3 (0<x<1), and having Young's modulus of less than 100 GPa.

A device includes a substrate, a first layer of getter material, a first electrode, an insulator element, a second electrode, a first input-output electrode, and a second input-output electrode. The first layer of getter material is deposited on the substrate. The first electrode is formed in a first conductive layer deposited on the first layer of getter material. The first layer of getter material has a getter capacity for hydrogen that is higher than the first electrode. The insulator element is formed in a piezoelectric layer deposited on the first electrode. The second electrode is formed in a second conductive layer deposited on the insulator element. The first input-output electrode is conductively connecting to the first layer of getter material. The second input-output electrode is conductively connecting to the second electrode.

A micro electromechanical (mem) device includes a first electrode, a second electrode, and a shaped carbon nanotube with a first end and a second end. The first end of the shaped carbon nanotube is conductively connected to the first electrode and the second end is conductively connected to the second electrode. A system for making the device includes a plurality of electrodes placed outside the growth region of a furnace to produce a controlled, time-varying electric field. A controller for the system is connected to a power supply to deliver controlled voltages to the electrodes to produce the electric field. A mixture of gases is passed through the furnace with the temperature raised to cause chemical vapor deposition (CVD) of carbon on a catalyst. The sequentially time-varying electric field parameterizes a growing nanotube into a predetermined shape.