Patent classifications
H10N30/074
Device using a piezoelectric element and method for manufacturing the same
An inkjet printing head 1 includes an actuator substrate 2 having pressure chambers (cavities) 7, a movable film formation layer 10 including movable films 10A disposed above the pressure chambers 7 and defining top surface portions of the pressure chambers 7, and piezoelectric elements 9 formed above the movable films 10A. Each piezoelectric element 9 includes a lower electrode 11 formed above a movable film 10A, a piezoelectric film 12 formed above the lower electrode 11, and an upper electrode 13 formed above the piezoelectric film 12. The piezoelectric film 12 includes an active portion 12A with an upper surface in contact with a lower surface of an upper electrode 13 and an inactive portion 12B led out in a direction along a front surface of the movable film formation layer 10 from an entire periphery of a side portion of the active portion 12A and having a thickness thinner than that of the active portion 12A.
Structural Health Monitoring Method and System
A structural health monitoring method includes directly forming an acoustic transducer on a surface of a structure to be monitored; generating, by the acoustic transducer, an acoustic wave to apply stress loading to a region of interest on the structure; and detecting a presence of a defect in the region of interest. Detecting includes a non-contact optical imaging of the region of interest with and without the stress loading and an analysis of imaging data from the non-contact optical imaging.
Tuning the piezoelectric and mechanical properties of the ALN system via alloying with YN and BN
Methods and materials are disclosed for simultaneously optimizing both the piezoelectric and mechanical properties of wurtzite piezoelectric materials based on the AlN wurtzite and alloyed with one or two end-members from the set BN, YN, CrN, and ScN.
HIGH DENSITY MULTI-POLED THIN FILM PIEZOELECTRIC DEVICES AND METHODS OF MAKING THE SAME
Disclosed are multi-poled piezoelectric devices with improved packing density and methods for making such multi-poled piezoelectric devices with improved packing density. The multi-poled piezoelectric devices comprise: a) a top electrode, a piezoelectric layer, and a bottom electrode fabricated on a substrate; b) vias generated by etching the piezoelectric layer, the top electrode, or both; and c) a re-distribution layer (RDL) deposited over one or more of: the top electrode, the piezoelectric layer, the bottom electrode, or the one or more vias.
Acoustic resonator and method for manufacturing the same
An acoustic resonator includes a substrate, a center portion, an extending portion, and a barrier layer. A first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on the substrate in the central portion. The extending portion is configured to extend from the center portion, and includes an insertion layer disposed below the piezoelectric layer. The barrier layer is disposed between the first electrode and the piezoelectric layer.
Method for Manufacturing Ferroelectric Film Deposition Substrate and Ferroelectric Film Deposition Substrate
A method for manufacturing a piezoelectric film deposition substrate (100) according to this present invention includes forming a piezoelectric film (3) on or above the lower electrode (2) with the mask (5) being attached on or above the lower electrode; forming an upper electrode (4) on the piezoelectric film with the mask being attached on or above the lower electrode; forming a the lower-electrode-exposed part (2a) by detaching the mask from the lower electrode; and subjecting the piezoelectric film to polarization by applying a voltage between the lower-electrode-exposed part and the upper electrode.
Method for Manufacturing Ferroelectric Film Deposition Substrate and Ferroelectric Film Deposition Substrate
A method for manufacturing a piezoelectric film deposition substrate (100) according to this present invention includes forming a piezoelectric film (3) on or above the lower electrode (2) with the mask (5) being attached on or above the lower electrode; forming an upper electrode (4) on the piezoelectric film with the mask being attached on or above the lower electrode; forming a the lower-electrode-exposed part (2a) by detaching the mask from the lower electrode; and subjecting the piezoelectric film to polarization by applying a voltage between the lower-electrode-exposed part and the upper electrode.
PIEZOELECTRIC SINGLE CRYSTAL INCLUDING INTERNAL ELECTRIC FIELD, METHOD FOR MANUFACTURING SAME, AND PIEZOELECTRIC AND DIELECTRIC APPLICATION COMPONENTS USING SAME
Provided is a piezoelectric single crystal comprising an internal bias electric field, a method of manufacturing the same, and piezoelectric and dielectric application components using the piezoelectric single crystal. The piezoelectric single crystal shows that as a change in each composition of [A] site ions, [B] site ions and [O] site ions from a perovskite type crystal structure ( [A] [B] O.sub.3), and oxygen partial-pressure during heat treatment in terms of a manufacturing process are controlled, while maintaining the inherent high dielectric constant and piezoelectric constant, the high internal bias electric field (EI) characteristic essential for the electrical stability of the piezoelectric single crystal is simultaneously satisfied. Therefore, piezoelectric application components and dielectric application components using the piezoelectric single crystal having excellent characteristics can be used in a wide temperature range and operating voltage conditions.
PIEZOELECTRIC SINGLE CRYSTAL INCLUDING INTERNAL ELECTRIC FIELD, METHOD FOR MANUFACTURING SAME, AND PIEZOELECTRIC AND DIELECTRIC APPLICATION COMPONENTS USING SAME
Provided is a piezoelectric single crystal comprising an internal bias electric field, a method of manufacturing the same, and piezoelectric and dielectric application components using the piezoelectric single crystal. The piezoelectric single crystal shows that as a change in each composition of [A] site ions, [B] site ions and [O] site ions from a perovskite type crystal structure ( [A] [B] O.sub.3), and oxygen partial-pressure during heat treatment in terms of a manufacturing process are controlled, while maintaining the inherent high dielectric constant and piezoelectric constant, the high internal bias electric field (EI) characteristic essential for the electrical stability of the piezoelectric single crystal is simultaneously satisfied. Therefore, piezoelectric application components and dielectric application components using the piezoelectric single crystal having excellent characteristics can be used in a wide temperature range and operating voltage conditions.
Liquid discharging head, liquid discharging apparatus, and method of manufacturing liquid discharging head
A liquid discharging head includes a pressure chamber partitioning portion that includes a plurality of partitioning walls that partition a pressure chamber in which a pressure to discharge a liquid is applied to the liquid, a diaphragm that includes a wall surface that faces the pressure chamber, The pressure chamber is located between the partitioning walls in a second direction. The wall surface of the diaphragm includes a first portion at a first position, and a second portion. A position of the second portion in the first direction is on an opposite side in the first direction with respect to a position of the first portion in the first direction.