Methods of using and making chemical sensors include exposing a functionalized electrode to a substance to be tested. The functionalized electrode is electrically connected to a sensor having a piezoelectric element and a piezoresistive element. A voltage on the functionalized electrode controls a resistance of the piezoresistive element. A current is measured passing through the piezoresistive element. The presence of the analyte is determined based on the measured current.

Provided in the embodiments are a transfer structure and a manufacturing method thereof, and a transfer device and a manufacturing method thereof. The transfer structure includes: a first electrode, a piezoelectric layer, a second electrode and an adhesive layer stacked on a substrate in sequence, wherein the first electrode and the second electrode are insulated from each other. The transfer structure further includes: a position-limiting layer, wherein the position-limiting layer includes a cavity; the piezoelectric layer and at least part of the adhesive layer are located in the cavity of the position-limiting layer; and in the direction perpendicular to the substrate, the distance between the surface, away from the substrate, of the position-limiting layer and the substrate is greater than the distance between the surface, away from the substrate, of the adhesive layer and the substrate.

A method for manufacturing a piezoelectric actuator is disclosed that includes forming a vibration plate, forming a plurality of electrodes on the vibration plate, forming a piezoelectric layer on the electrodes, and forming a common electrode on the piezoelectric layer.

A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.

A manufacturing method of micro fluid actuator includes: providing a substrate; depositing a first protection layer on a first surface of the substrate; depositing an actuation region on the first protection layer; applying lithography dry etching to a portion of the first protection layer to produce at least one first protection layer flow channel; applying wet etching to a portion of a main structure of the substrate to produce a chamber body and a first polycrystalline silicon flow channel region, while a region of an oxidation layer middle section of the main structure is not etched; applying reactive-ion etching to a portion of a second surface of the substrate to produce at least one substrate silicon flow channel; and applying dry etching to a portion of a silicon dioxide layer to produce at least one silicon dioxide flow channel.

A method of manufacturing a dielectric film includes the steps of: adjusting a particle size distribution of particles of a dielectric substance to fall within a specified range; kneading the particles having the adjusted particle size distribution and a dispersion medium to obtain a slurry; and forming the slurry into a film shape to obtain a film-like compact.

A method of manufacture and structure for a monolithic single chip single crystal device. The method can include forming a first single crystal epitaxial layer overlying the substrate and forming one or more second single crystal epitaxial layers overlying the first single crystal epitaxial layer. The first single crystal epitaxial layer and the one or more second single crystal epitaxial layers can be processed to form one or more active or passive device components. Through this process, the resulting device includes a monolithic epitaxial stack integrating multiple circuit functions.

A MEMS device is provided that includes a semiconductor substrate including a main surface extending perpendicular to a first direction and a side surface extending on a plane parallel to the first direction and to a second direction that is perpendicular to the first direction. At least one cantilevered member protrudes from the side surface of the semiconductor substrate along a third direction that is perpendicular to the first and second directions. The at least one cantilevered member includes a body portion that includes a piezoelectric material. The body portion has a length along the third direction, a height along the first direction and a width along the second direction, and the height is greater than the width. The at least one cantilevered member is configured to vibrate by lateral bending along a direction perpendicular to the first direction.

A liquid discharging head includes a pressure chamber partitioning portion that includes a plurality of partitioning walls that partition a pressure chamber in which a pressure to discharge a liquid is applied to the liquid, a diaphragm that includes a wall surface that faces the pressure chamber. The pressure chamber is located between the partitioning walls in a second direction. The wall surface of the diaphragm includes a first portion at a first position, and a second portion. A position of the second portion in the first direction is on an opposite side in the first direction with respect to a position of the first portion in the first direction.

A method for providing a piezoelectric device is described. The method includes providing a first electrode layer on a substrate and coating at least one layer of piezoelectric material. The coating using at least one of clot-die coating, dip coating, aerosol coating and R2R coating such that a layer of the at least one layer of piezoelectric material has a variation in thickness of not more than ten percent. The layer(s) of piezoelectric materials are also heat treated. Multiple layers of piezoelectric material may be slot-die coated and heat treated to provide a multilayer having the desired thickness. A second electrode layer is provided on the layer(s) of piezoelectric material.