A sound generating panel, a display device with a screen generating sound and a method for manufacturing a sound generating panel are provided. The sound generating panel includes sound generating unit groups, each of which includes sound generating units. Each sound generating unit includes a support layer with openings and two piezoelectric structures resonating through a cavity, improving a sound pressure generated by the sound generating panel. Each sound generating unit group includes sound generating units with different radii, thereby realizing sound generating at different frequencies, and improving a sound effect of the sound generating panel. Each of some sound generating unit groups includes ultrasonic detection units for detecting a distance between a listener and the sound generating panel, so that an effect of automatically regulating and controlling a volume of sound is realized. In the display device, the sound generating panel is on a display side of a display panel, so that sound waves can directly enter human ears. The sound generating panel provided by the present disclosure is capable of automatically regulating and controlling the volume of sound and having a vivid sound effect, and the sound generating panel is integrated to the display panel, improving a level of integration of a screen.

A sound generating panel, a display device with a screen generating sound and a method for manufacturing a sound generating panel are provided. The sound generating panel includes sound generating unit groups, each of which includes sound generating units. Each sound generating unit includes a support layer with openings and two piezoelectric structures resonating through a cavity, improving a sound pressure generated by the sound generating panel. Each sound generating unit group includes sound generating units with different radii, thereby realizing sound generating at different frequencies, and improving a sound effect of the sound generating panel. Each of some sound generating unit groups includes ultrasonic detection units for detecting a distance between a listener and the sound generating panel, so that an effect of automatically regulating and controlling a volume of sound is realized. In the display device, the sound generating panel is on a display side of a display panel, so that sound waves can directly enter human ears. The sound generating panel provided by the present disclosure is capable of automatically regulating and controlling the volume of sound and having a vivid sound effect, and the sound generating panel is integrated to the display panel, improving a level of integration of a screen.

An integrated device based on a third-generation semiconductor and a manufacturing method thereof are provided. The integrated device at least includes a SiC substrate, a buffer layer, a GaN film layer and a piezoelectric material layer; the SiC substrate includes a first buffer layer stacked on a first SiC substrate and a second buffer layer stacked on a second SiC substrate; the GaN film layer at least includes a first GaN film layer stacked on the first buffer layer and a second GaN film layer stacked on the second buffer layer; the first SiC substrate, the first buffer layer, the first GaN film layer and the piezoelectric material layer which are stacked are used for forming a piezoelectric multi-layer film; the piezoelectric multi-layer film is used for forming a surface acoustic wave (SAW) filter.

An integrated device based on a third-generation semiconductor and a manufacturing method thereof are provided. The integrated device at least includes a SiC substrate, a buffer layer, a GaN film layer and a piezoelectric material layer; the SiC substrate includes a first buffer layer stacked on a first SiC substrate and a second buffer layer stacked on a second SiC substrate; the GaN film layer at least includes a first GaN film layer stacked on the first buffer layer and a second GaN film layer stacked on the second buffer layer; the first SiC substrate, the first buffer layer, the first GaN film layer and the piezoelectric material layer which are stacked are used for forming a piezoelectric multi-layer film; the piezoelectric multi-layer film is used for forming a surface acoustic wave (SAW) filter.

A sound generating panel, a display device with a screen generating sound and a method for manufacturing a sound generating panel are provided. The sound generating panel includes sound generating unit groups, each of which includes sound generating units. Each sound generating unit includes a support layer with openings and two piezoelectric structures resonating through a cavity. Each sound generating unit group includes sound generating units with different radii to generate sound at different frequencies. Each of some sound generating unit groups includes ultrasonic detection units for detecting a distance between a listener and the sound generating panel. In the display device, the sound generating panel is on a display side of a display panel, and the sound generating panel is integrated to the display panel.

A sound generating panel, a display device with a screen generating sound and a method for manufacturing a sound generating panel are provided. The sound generating panel includes sound generating unit groups, each of which includes sound generating units. Each sound generating unit includes a support layer with openings and two piezoelectric structures resonating through a cavity. Each sound generating unit group includes sound generating units with different radii to generate sound at different frequencies. Each of some sound generating unit groups includes ultrasonic detection units for detecting a distance between a listener and the sound generating panel. In the display device, the sound generating panel is on a display side of a display panel, and the sound generating panel is integrated to the display panel.

An integrated device based on a third-generation semiconductor and a manufacturing method thereof are provided. The integrated device at least includes a SiC substrate, a buffer layer, a GaN film layer and a piezoelectric material layer; the SiC substrate includes a first buffer layer stacked on a first SiC substrate and a second buffer layer stacked on a second SiC substrate; the GaN film layer at least includes a first GaN film layer stacked on the first buffer layer and a second GaN film layer stacked on the second buffer layer; the first SiC substrate, the first buffer layer, the first GaN film layer and the piezoelectric material layer which are stacked are used for forming a piezoelectric multi-layer film; the piezoelectric multi-layer film is used for forming a surface acoustic wave (SAW) filter.

An integrated device based on a third-generation semiconductor and a manufacturing method thereof are provided. The integrated device at least includes a SiC substrate, a buffer layer, a GaN film layer and a piezoelectric material layer; the SiC substrate includes a first buffer layer stacked on a first SiC substrate and a second buffer layer stacked on a second SiC substrate; the GaN film layer at least includes a first GaN film layer stacked on the first buffer layer and a second GaN film layer stacked on the second buffer layer; the first SiC substrate, the first buffer layer, the first GaN film layer and the piezoelectric material layer which are stacked are used for forming a piezoelectric multi-layer film; the piezoelectric multi-layer film is used for forming a surface acoustic wave (SAW) filter.

A piezoelectric microelectromechanical systems microphone is provided comprising a sensor, an anchor region at which the sensor is supported by a substrate, a first region of the sensor adjacent to the anchor region having a first compliance, the first region having at least one piezoelectric layer and at least one electrode, and a second region of the sensor, the second region being adjacent to the first region, having at least one piezoelectric layer and at least one electrode, and having a second compliance, the first and second compliances being different. A method for manufacturing a piezoelectric microelectromechanical systems microphone is also provided.