Micromachined ultrasonic transducer (MUT) arrays capable of multiple resonant modes and techniques for operating them are described, for example to achieve both high frequency and low frequency operation in a same device. In embodiments, various sizes of piezoelectric membranes are fabricated for tuning resonance frequency across the membranes. The variously sized piezoelectric membranes are gradually transitioned across a length of the substrate to mitigate destructive interference between membranes oscillating in different modes and frequencies.

A backing includes a plurality of backing plates that are laminated. Each backing plate includes a lead row and a backing material. Each lead includes a lead wire and an insulating coating. The insulating coating is integrated with the backing material, and an adhesive layer between them does not exist. Short-circuit between the leads may be prevented or reduced by the insulating coating. The backing plate is manufactured by a screen printing method.

A manufacturing method of miniature fluid actuator is disclosed and includes the following steps. A flow-channel main body manufactured by a CMOS process is provided, and an actuating unit is formed by a deposition process, a photolithography process and an etching process. Then, at least one flow channel is formed by etching, and a vibration layer and a central through hole are formed by a photolithography process and an etching process. After that, an orifice layer is provided to form at least one outflow opening by an etching process, and then a chamber is formed by rolling a dry film material on the orifice layer. Finally, the orifice layer and the flow-channel main body are flip-chip aligned and hot-pressed, and then the miniature fluid actuator is obtained by a flip-chip alignment process and a hot pressing process.

A manufacturing method of miniature fluid actuator is disclosed and includes the following steps. A flow-channel main body manufactured by a CMOS process is provided, and an actuating unit is formed by a deposition process, a photolithography process and an etching process. Then, at least one flow channel is formed by etching, and a vibration layer and a central through hole are formed by a photolithography process and an etching process. After that, an orifice layer is provided to form at least one outflow opening by an etching process, and then a chamber is formed by rolling a dry film material on the orifice layer. Finally, the orifice layer and the flow-channel main body are flip-chip aligned and hot-pressed, and then the miniature fluid actuator is obtained by a flip-chip alignment process and a hot pressing process.

The present invention is directed to improving an insulating property of a backing in which a lead array is buried. The method includes a coating forming process, in which insulating coatings are formed with respect to at least a plurality of lead rows included in a plurality of lead frames; after the forming of the insulating coatings, a plate manufacturing process, in which a plurality of backing plates are manufactured by pouring a backing material towards a lead row in each of the plurality of lead frames so that the lead row and the backing material are integrated with each other; and a laminating process, in which the plurality of backing plates are laminated.

The present invention is directed to improving an insulating property of a backing in which a lead array is buried. The method includes a coating forming process, in which insulating coatings are formed with respect to at least a plurality of lead rows included in a plurality of lead frames; after the forming of the insulating coatings, a plate manufacturing process, in which a plurality of backing plates are manufactured by pouring a backing material towards a lead row in each of the plurality of lead frames so that the lead row and the backing material are integrated with each other; and a laminating process, in which the plurality of backing plates are laminated.

A method of making a thin film based structure. The method includes (a): forming an electrically conductive layer on a substrate such that the electrically conductive layer is releasably attached to the substrate. The method also includes (b): forming a ceramic or metallic thin film on the electrically conductive layer, on a side opposite the substrate. The electrically conductive layer and the substrate are arranged such that when an interface between them contacts a water-based liquid, the water-based liquid facilitates or causes release of the electrically conductive layer from the substrate, substantially without damaging the substrate.

A method of making a thin film based structure. The method includes (a): forming an electrically conductive layer on a substrate such that the electrically conductive layer is releasably attached to the substrate. The method also includes (b): forming a ceramic or metallic thin film on the electrically conductive layer, on a side opposite the substrate. The electrically conductive layer and the substrate are arranged such that when an interface between them contacts a water-based liquid, the water-based liquid facilitates or causes release of the electrically conductive layer from the substrate, substantially without damaging the substrate.

A MEMS device is provided that includes a semiconductor substrate including a main surface extending perpendicular to a first direction and a side surface extending on a plane parallel to the first direction and to a second direction that is perpendicular to the first direction. At least one cantilevered member protrudes from the side surface of the semiconductor substrate along a third direction that is perpendicular to the first and second directions. The at least one cantilevered member includes a body portion that includes a piezoelectric material. The body portion has a length along the third direction, a height along the first direction and a width along the second direction, and the height is greater than the width. The at least one cantilevered member is configured to vibrate by lateral bending along a direction perpendicular to the first direction.

A method for manufacturing a core-shell coaxial gallium nitride (GaN) piezoelectric nanogenerator is provided. A mask covering a center part of a gallium nitride wafer is removed. An electrodeless photoelectrochemical etching is performed on the gallium nitride wafer to form a primary GaN nanowire array on a surface of the gallium nitride wafer. A precious metal layer provided on the surface of the gallium nitride wafer is removed and an alumina layer is deposited on the surface of the gallium nitride wafer to cover the primary GaN nanowire array to obtain a core-shell coaxial GaN nanowire array. A first conductive layer is provided on a flexible substrate to which the core-shell coaxial GaN nanowire array is transferred. A second conductive layer is provided at a top end of the core-shell coaxial GaN nanowire array, and is connected to an external circuit to obtain the core-shell coaxial GaN piezoelectric nanogenerator.