A method of manufacturing a piezoelectric element of the present disclosure includes: a first film forming step of forming a first electrode at a substrate; a second film forming step of forming a first piezoelectric layer at the first electrode; a first processing step of patterning the first electrode and the first piezoelectric layer by etching; and a third film forming step of forming, after the first processing step, a second piezoelectric layer to cover the first electrode, the first piezoelectric layer, and the substrate.

A method of manufacturing a piezoelectric element of the present disclosure includes: a first film forming step of forming a first electrode at a substrate; a second film forming step of forming a first piezoelectric layer at the first electrode; a first processing step of patterning the first electrode and the first piezoelectric layer by etching; and a third film forming step of forming, after the first processing step, a second piezoelectric layer to cover the first electrode, the first piezoelectric layer, and the substrate.

A method of generating a piezoelectric actuator includes: forming a piezoelectric member upon a rigid substrate; and removing one or more portions of the rigid substrate to form one or more gaps in the rigid substrate, thus defining at least one deformable portion of the piezoelectric member and at least one rigid portion of the piezoelectric member.

A method of generating a piezoelectric actuator includes: forming a piezoelectric member upon a rigid substrate; and removing one or more portions of the rigid substrate to form one or more gaps in the rigid substrate, thus defining at least one deformable portion of the piezoelectric member and at least one rigid portion of the piezoelectric member.

A piezoelectric device includes a container and an AT-cut crystal element. The AT-cut crystal element has at least one side surface intersecting with a Z′-axis of the crystallographic axis of the crystal constituted of three surfaces. The first surface is a surface equivalent to a surface formed by rotating the principal surface by 4°±3.5° with an X-axis of the crystal as a rotation axis. The second surface is a surface equivalent to a surface formed by rotating the principal surface by −57°±5° with the X-axis. The third surface is a surface equivalent to a surface formed by rotating the principal surface by −42°±5° with the X-axis. When two corner portions on a side of a second side opposed to the first side of the AT-cut crystal element are viewed in plan view, each of the two corner portions have an approximately right angle.

A piezoelectric device includes a container and an AT-cut crystal element. The AT-cut crystal element has at least one side surface intersecting with a Z′-axis of the crystallographic axis of the crystal constituted of three surfaces. The first surface is a surface equivalent to a surface formed by rotating the principal surface by 4°±3.5° with an X-axis of the crystal as a rotation axis. The second surface is a surface equivalent to a surface formed by rotating the principal surface by −57°±5° with the X-axis. The third surface is a surface equivalent to a surface formed by rotating the principal surface by −42°±5° with the X-axis. When two corner portions on a side of a second side opposed to the first side of the AT-cut crystal element are viewed in plan view, each of the two corner portions have an approximately right angle.

A core-shell coaxial gallium nitride piezoelectric nanogenerator includes a core-shell coaxial gallium nitride nanowire array and a flexible substrate. A first conductive layer is provided on a surface of the flexible substrate. The core-shell coaxial gallium nitride nanowire array is fixed to the flexible substrate. A top end of the core-shell coaxial gallium nitride nanowire array is provided with a second conductive layer. The first conductive layer and the second conductive layer are both connected to an external circuit via a wire. A nanowire of the core-shell coaxial gallium nitride nanowire array is covered with an alumina layer. A method for preparing the core-shell coaxial gallium nitride piezoelectric nanogenerator is further provided. The gallium nitride nanowire array is formed by electrodeless photoelectrochemical etching.

A core-shell coaxial gallium nitride piezoelectric nanogenerator includes a core-shell coaxial gallium nitride nanowire array and a flexible substrate. A first conductive layer is provided on a surface of the flexible substrate. The core-shell coaxial gallium nitride nanowire array is fixed to the flexible substrate. A top end of the core-shell coaxial gallium nitride nanowire array is provided with a second conductive layer. The first conductive layer and the second conductive layer are both connected to an external circuit via a wire. A nanowire of the core-shell coaxial gallium nitride nanowire array is covered with an alumina layer. A method for preparing the core-shell coaxial gallium nitride piezoelectric nanogenerator is further provided. The gallium nitride nanowire array is formed by electrodeless photoelectrochemical etching.

A diaphragm for a piezoelectric micromachined ultrasonic transducer (PMUT) is presented having resonance frequency and bandwidth characteristics which are decoupled from one another into independent variables. Portions of at least the piezoelectric material layer and backside electrode layer are removed in a selected pattern to form structures, such as ribs, in the diaphragm which retains stiffness while reducing overall mass. The patterned structure can be formed by additive, or subtractive, fabrication processes.

A piezoelectric thin-film suspended above a carrier substrate. An input interdigital transducer (IDT) having first interdigitated electrodes is disposed at different locations along the horizontal axis and on the first side of the piezoelectric thin-film. Each opposing pair of the first interdigitated electrodes is to selectively transduce a particular frequency range of an input electrical signal that varies in frequency over time into an acoustic wave of a laterally vibrating mode based on a pitch between electrodes of the opposing pair. An output IDT that includes second interdigitated electrodes is disposed at different locations along the horizontal axis and on the second side of the piezoelectric thin-film. Each opposing pair of the second interdigitated electrodes is to convert the acoustic wave transduced by the respective opposing pair of the first interdigitated electrodes into a compressed pulse.