A method of manufacturing a piezoelectric actuator includes preparing a laminate including a substrate, a first electrode layer disposed on the substrate, a piezoelectric layer disposed on the first electrode layer, and a second electrode layer disposed on the piezoelectric layer, and forming a contour shape of the piezoelectric layer. The forming of the contour shape includes dry etching the piezoelectric layer from the second electrode layer side to dig the piezoelectric layer halfway in a thickness direction, covering, with a resist film, a dry etched surface formed on a side surface of the piezoelectric layer by the dry etching, and wet etching the piezoelectric layer from the second electrode layer side to dig the piezoelectric layer until the first electrode layer is reached.

A method of forming an electrode in a ceramic transducer electronic component is provided. The method includes preparing a sintered body for a ceramic transducer containing a metal oxide, performing patterning by irradiating a laser on a surface of the sintered body for a ceramic transducer, and forming a metal electrode by performing an electroless plating process on the sintered body for a ceramic transducer on which the patterning is formed, wherein, in the performing of the patterning by irradiating the laser on the surface of the sintered body for a ceramic transducer, the patterning is performed by irradiating the laser that satisfies at least one of a predetermined power condition and a predetermined processing speed condition.

A piezoelectric device includes a base portion and an upper layer on an upper side of and supported by the base portion. The upper layer includes a membrane portion that does not overlap with the base portion in plan view. The membrane portion includes at least one piezoelectric layer sandwiched by electrode layers from a top and a bottom thereof. An intermediate layer is between a lower electrode and the base portion. The intermediate layer includes one or more individual layers, and an individual layer exposed as a lower surface of the membrane portion among the one or more individual layers includes a bent portion, which extends from the lower surface of the membrane portion to a lateral wall, on a boundary between a portion defining and functioning as the lower surface of the membrane portion and a portion overlapping with the base portion.

An acoustic transducer includes a first flexible structure having a top surface and a bottom surface. A transducer is attached to the top surface of the first flexible structure, wherein the transducer causes deformation of the first flexible structure when an input electrical signal is applied to the transducer. A second flexible structure has a convex top surface and a concave bottom surface. The convex top surface of the second flexible structure is in contact with the bottom surface of the first flexible structure. Deformation of the first flexible structure causes deformation of the second flexible structure.

The invention provides a planarization method, which can make the local flatness of the product to be processed more uniform. The product has a cavity filled with oxide and includes a first electrode layer, a piezoelectric layer and a second electrode layer superposed on the cavity. The first electrode layer covers the cavity and includes a first inclined face around the first electrode layer, and the piezoelectric layer covers the first electrode layer and is arranged on the first electrode layer. The planarization method includes: depositing a passivation layer on the second electrode layer and etching the passivation layer completely until the thickness of the passivation layer is reduced to the required thickness.

A supporting film is provided on an opening and a wall of a substrate. A piezoelectric film is provided on a first region of the supporting film corresponding to the opening and a second region of the supporting film corresponding to the wall. The thickness of the piezoelectric film at the second region is smaller than that of the piezoelectric film provided at the first region. Therefore, vibration of the piezoelectric film in the first region is large, and vibration of the piezoelectric film in the second region is small. This alleviates disadvantages such as a loss of the vibration characteristics of a piezoelectric element.

In one aspect, a microelectronic device comprises: a suspended lithium-based thin film; and one or more electrodes disposed on the suspended lithium-based thin film, wherein the one or more electrodes comprises one or more fingers, and a width of at least one outer finger of the one or more fingers is smaller than a width of at least one inner finger of the one or more fingers.

The present invention provides a piezoelectric element manufacturing method. The manufacturing method is a method of manufacturing a piezoelectric element comprising a piezoelectric body composite in which a piezoelectric body configured from a Pb-based piezoelectric material and a resin are alternately arranged, and comprises a step of etching, using an etching liquid, a plurality of parallel piezoelectric body segments formed by dicing. The etching liquid comprises a liquid which contains 0.1 to 20 mass % of hexafluorosilicic acid.

The present disclosure provides an ultrasonic transducer and a method for manufacturing an ultrasonic transducer, a display substrate and a method for manufacturing a display substrate. The method for manufacturing the ultrasonic transducer includes: forming a via hole in a substrate; forming a structural layer on a side of the substrate, the structural layer cover the via hole; and etching the structural layer from a side of the substrate away from the structural layer by using the substrate formed with the via hole as a blocking layer, to form a cavity at a position of the structural layer corresponding to that of the via hole.

A manufacturing method of micro fluid actuator includes: providing a substrate; depositing a first protection layer on a first surface of the substrate; depositing an actuation region on the first protection layer; applying lithography dry etching to a portion of the first protection layer to produce at least one first protection layer flow channel; applying wet etching to a portion of a main structure of the substrate to produce a chamber body and a first polycrystalline silicon flow channel region, while a region of an oxidation layer middle section of the main structure is not etched; applying reactive-ion etching to a portion of a second surface of the substrate to produce at least one substrate silicon flow channel; and applying dry etching to a portion of a silicon dioxide layer to produce at least one silicon dioxide flow channel.