A plurality of conductive via connections are fabricated on a substrate located at positions where MTJ devices are to be fabricated, wherein a width of each of the conductive via connections is smaller than or equivalent to a width of the MTJ devices. The conductive via connections are surrounded with a dielectric layer having a height sufficient to ensure that at the end of a main MTJ etch, an etch front remains in the dielectric layer surrounding the conductive via connections. Thereafter, a MTJ film stack is deposited on the plurality of conductive via connections surrounded by the dielectric layer. The MTJ film stack is etched using an ion beam etch process (IBE), etching through the MTJ film stack and into the dielectric layer surrounding the conductive via connections to form the MTJ devices wherein by etching into the dielectric layer, re-deposition on sidewalls of the MTJ devices is insulating.

The present invention is directed to a method for manufacturing an ultrasonic fingerprint sensor by using a nanorod structure, the method including: a conductive mold generating step of generating a plurality of rod generation holes; a nanorod generating step of generating nanorods by filling the plurality of rod generation holes with a nano-piezoelectric material; a side electrode generation portion marking step of marking side electrode generation portions; a conductive mold etching step of generating nanorods and side electrodes by performing primary etching on the conductive mold; an insulating material filling step of filling portions with an insulating material; a lower electrode forming step of performing secondary etching and forming lower electrodes; a dummy substrate bonding step of bonding a dummy substrate to a surface on which the lower electrodes are formed; and an upper electrode forming step of removing the conductive substrate base and forming upper electrodes.

The present invention is directed to a method for manufacturing an ultrasonic fingerprint sensor by using a nanorod structure, the method including: a conductive mold generating step of generating a plurality of rod generation holes; a nanorod generating step of generating nanorods by filling the plurality of rod generation holes with a nano-piezoelectric material; a side electrode generation portion marking step of marking side electrode generation portions; a conductive mold etching step of generating nanorods and side electrodes by performing primary etching on the conductive mold; an insulating material filling step of filling portions with an insulating material; a lower electrode forming step of performing secondary etching and forming lower electrodes; a dummy substrate bonding step of bonding a dummy substrate to a surface on which the lower electrodes are formed; and an upper electrode forming step of removing the conductive substrate base and forming upper electrodes.

A copolymer including fluorinated units of formula (I):

—CX.sub.1X.sub.2—CX.sub.3X.sub.4—  (I)

in which each of the X.sub.1, X.sub.2, X.sub.3 and X.sub.4 is independently chosen from H, F and alkyl groups including from 1 to 3 carbon atoms which are optionally partially or totally fluorinated; and fluorinated units of formula (II):

—CX.sub.5X.sub.6—CX.sub.7Z—  (II)

in which each of the X.sub.5, X.sub.6 and X.sub.7 is independently chosen from H, F and alkyl groups including from 1 to 3 carbon atoms which are optionally partially or totally fluorinated, and in which Z is a photoactive group of formula —Y—Ar—R, Y representing an oxygen atom or an NH group or a sulfur atom, Ar representing an aryl group, and R being a monodentate or bidentate group including from 1 to 30 carbon atoms. Also, a process for preparing this copolymer, a composition including this copolymer, and a film obtained from this copolymer.

A piezoelectric film includes a substrate having flexibility, and at least two piezoelectric elements provided to the substrate so as to be arranged at intervals of a first dimension along a first direction, the piezoelectric elements are each configured by stacking a first electrode film, a piezoelectric film made of an inorganic material, and a second electrode film along a thickness direction of the substrate, and an area between the piezoelectric elements adjacent to each other along the first direction forms a vibrational region which can be displaced in the thickness direction.

A piezoelectric device including a substrate, a metal-insulator-metal element, a hydrogen blocking layer, a passivation layer, a first contact terminal and a second contact terminal is provided. The metal-insulator-metal element is disposed on the substrate. The hydrogen blocking layer is disposed on the metal-insulator-metal element. The passivation layer covers the hydrogen blocking layer and the metal-insulator-metal element. The first contact terminal is electrically connected to the metal-insulator-metal element. The second contact terminal is electrically connected to the metal-insulator-metal element.

Disclosed is a device that includes a crystalline substrate and a patterned aluminum-based material layer disposed onto the crystalline substrate. The patterned aluminum-based material layer has a titanium-alloyed surface. A titanium-based material layer is disposed over select portions of the titanium-alloyed surface. In an exemplary embodiment, the patterned aluminum-based material layer forms a pair of interdigitated transducers to provide a surface wave acoustic (SAW) device. The SAW device of the present disclosure is usable to realize SAW-based filters for wireless communication equipment.

A piezoelectric actuator comprises a substrate, an insulator layer on the substrate, and a piezo actuator stack on the insulator layer. The piezo actuator stack comprises an insulator-adjacent electrode on the insulator layer. A piezo layer having a tapered sidewall resides on a portion of the insulator-adjacent electrode. An insulator-distal electrode on the piezo layer having a taper-adjacent edge offset from an intersection of the tapered sidewall of the piezo layer and the insulator-adjacent electrode.

Piezoelectric devices are described fabricated in packaging buildup layers. In one example, a package has a plurality of conductive routing layers and a plurality of organic dielectric layers between the conductive routing layers. A die attach area has a plurality of vias to connect to a microelectronic die, the vias connecting to respective conductive routing layers. A piezoelectric device is formed on an organic dielectric layer, the piezoelectric device having at least one electrode coupled to a conductive routing layer.

An ultrasonic sensor includes a vibration plate that includes a vibration portion and is formed of a resin; a wall portion that is provided on the vibration plate, surrounds the vibration portion and is formed of a resin; and a piezoelectric element that is provided in the vibration portion of the vibration plate. Accordingly, the wall portion surrounding the vibration portion can suppress a frequency variation of an ultrasonic wave output from the ultrasonic sensor and can deform the ultrasonic sensor into a shape corresponding to a surface of an object having various shapes.