The present invention provides a method for electrohydrodynamic jet printing curved piezoelectric ceramics. First, a stable pressure is provided for a piezoelectric ceramic slurry to ensure that the slurry flows out from a nozzle at a fixed flow rate, and at the same time, an electric field is applied to the piezoelectric ceramic slurry at the nozzle to form a stable fine jet; then a curved substrate is fixed on a fixture of a curved substrate six-axis linkage module to ensure that the curved substrate is always perpendicular to the jet of the nozzle and keeps a constant distance from the nozzle during a printing process; fine jet drop on demand is realized through cooperative control of the changes of the curved substrate six-axis linkage module, the electric field and a flow field, and electrohydrodynamic jet printing and molding of curved piezoelectric ceramics is finally realized.

A subtractive forming method for piezoresistive material stacks includes applying an etch chemistry to an exposed first portion of a piezoresistive material stack. The etch chemistry includes a citric acid component for removing a first element of a piezoelectric layer of the piezoresistive material stack selectively to a surface oxide. At least one second element of the piezoelectric layer remains. The method further includes heating the piezoresistive material stack after said applying the etch chemistry to vaporize the at least one second element. A second portion of the piezoresistive material stack is protected from the removal and the heating by a mask.

The present invention provides a method for electrohydrodynamic jet printing curved piezoelectric ceramics. First, a stable pressure is provided for a piezoelectric ceramic slurry to ensure that the slurry flows out from a nozzle at a fixed flow rate, and at the same time, an electric field is applied to the piezoelectric ceramic slurry at the nozzle to form a stable fine jet; then a curved substrate is fixed on a fixture of a curved substrate six-axis linkage module to ensure that the curved substrate is always perpendicular to the jet of the nozzle and keeps a constant distance from the nozzle during a printing process; fine jet drop on demand is realized through cooperative control of the changes of the curved substrate six-axis linkage module, the electric field and a flow field, and electrohydrodynamic jet printing and molding of curved piezoelectric ceramics is finally realized.

A method of forming a monolithic integrated PMUT and CMOS with a coplanar elastic, sealing, and passivation layer in a single step without bonding and the resulting device are provided. Embodiments include providing a CMOS wafer with a metal layer; forming a dielectric over the CMOS; forming a sacrificial structure in a portion of the dielectric; forming a bottom electrode; forming a piezoelectric layer over the CMOS; forming a top electrode over portions of the bottom electrode and piezoelectric layer; forming a via through the top electrode down to the bottom electrode and a second via down to the metal layer through the top electrode; forming a second metal layer over and along sidewalls of the first and second via; removing the sacrificial structure, an open cavity formed; and forming a dielectric layer over a portion of the CMOS, the open cavity sealed and an elastic layer and passivation formed.

Provided is a nano-scale single crystal thin film. The nano-scale single crystal thin film comprises a nano-scale single crystal thin film layer, a first transition layer, an isolation layer, a second transition layer, and a substrate layer. The first transition layer is located between the nano-scale single crystal thin film layer and the isolation layer, while the second transition layer is located between the isolation layer and the substrate layer. The first transition layer comprises a certain concentration of the H element.

Disclosed is a silicon nanowire pressure sensor including a lower substrate with a diaphragm recess in a lower surface thereof, an upper substrate having a first surface attached to an upper surface of the lower substrate, silicon nanowires formed on the first surface of the upper substrate, resistive portions exposed on a second surface of the upper substrate, and a diaphragm region formed by etching a center portion of the second surface of the upper substrate so as to be aligned with the resistive portions, in which the diaphragm recess is larger than the diaphragm region.

A subtractive forming method that includes providing a material stack including a samarium and selenium containing layer and an aluminum containing layer in direct contact with the samarium and selenium containing layer. The samarium component of the samarium and selenium containing layer of the exposed portion of the material stack is etched with an etch chemistry comprising citric acid and hydrogen peroxide that is selective to the aluminum containing layer. The hydrogen peroxide reacts with the aluminum containing layer to provide an oxide etch protectant surface on the aluminum containing layer, and the citric acid etches samarium selectively to the oxide etch protectant surface. Thereafter, a remaining selenium component of is removed by elevating a temperature of the selenium component.

A method for fabricating nano-electro-mechanical tags for identification and authentication includes, in part, forming a protective layer above a substrate, forming a first conductive layer above the protective layer serving as a first electrode, forming a piezoelectric layer above the first conductive layer, forming a second conductive layer above the piezoelectric layer, patterning the second conductive layer to form a second electrode, patterning the piezoelectric layer to expose one or more portions of the first conductive layer, and forming one or more trenches that extends into a plurality layers formed above. In addition, a sacrificial layer can be formed above portions of the substrate, and the sacrificial layer can be removed by etching to release the nano-electro-mechanical tags from the substrate.

A method for fabricating nano-electro-mechanical tags for identification and authentication includes, in part, forming a protective layer above a substrate, forming a first conductive layer above the protective layer serving as a first electrode, forming a piezoelectric layer above the first conductive layer, forming a second conductive layer above the piezoelectric layer, patterning the second conductive layer to form a second electrode, patterning the piezoelectric layer to expose one or more portions of the first conductive layer, and forming one or more trenches that extends into a plurality layers formed above. In addition, a sacrificial layer can be formed above portions of the substrate, and the sacrificial layer can be removed by etching to release the nano-electro-mechanical tags from the substrate.

A method for manufacturing a piezoelectric device that includes a substrate, a piezoelectric layer directly or indirectly supported by the substrate and arranged above the substrate, a heater, and a heater electrode for driving the heater. Moreover, the method includes forming the piezoelectric layer, the heater, and the heater electrode and subjecting the piezoelectric device to heat treatment with heat generated from the heater by driving the heater by feeding electric power to the heater electrode.