The disclosure discloses a drive component of a micro-needle system, a method for driving the same, a micro-needle system and a method for fabricating the same; wherein the drive component includes a substrate with a groove; a bottom electrode in the groove; an electro-active polymer layer, covering the bottom electrode, in the groove; and an upper flexible electrode covering the electro-active polymer layer; wherein the upper flexible electrode and the bottom electrode are configured to generate a voltage, and the electro-active polymer layer is configured to generate a strain under the voltage.

Aspects of the present disclosure describe systems, methods, and structures that scavenge mechanical energy to provide electrical energy to a wearable, where the mechanical energy is scavenged by a bending-strain-based transducer that includes a non-resonant energy harvester. By employing a non-resonant energy harvester that operates in bending mode, more electrical energy can be generated that possible with prior-art energy harvesters. In some embodiments the bending-strain-based transducer also includes a sensor and/or a haptic device. Some transducers in accordance with the present disclosure comprise a piezoelectric layer comprising a low-K piezoelectric material, such as aluminum nitride, which enables generation of higher voltage and power/energy output and/or a thinner transducer. As a result, transducers in accordance with the present disclosure can be included in wearables for which large transducer thickness would be problematic, such as shoe insoles, midsoles or outsoles, garments, bras, handbags, backpacks, and the like.

The present application discloses a composite light-emitting material, a production method thereof, and use thereof, wherein the composite light-emitting material has a perovskite nanomaterial and a matrix; the perovskite nanomaterial comprises γ-CsPbI.sub.3 and an addition element M; and the addition element M is selected from at least one of Li, Na, K, and Rb.

Provided is: an elongated plate-form piezoelectric body, which contains an optically active helical chiral polymer (A) having a weight-average molecular weight of from 50,000 to 1,000,000 and has an elongated plate shape having a thickness of from 0.001 mm to 0.2 mm, a width of from 0.1 mm to 30 mm and a width-to-thickness ratio of 2 or higher, and in which the lengthwise direction and the main orientation direction of the helical chiral polymer (A) are substantially parallel to each other; the crystallinity measured by a DSC method is from 20% to 80%; and the birefringence is from 0.01 to 0.03.

A thin-film transistor may include an amorphous semiconductor channel layer, an organic material piezoelectric stress gate layer formed adjacent to the amorphous semiconductor channel layer, a source electrode coupled to the organic material piezoelectric stress gate layer, a drain electrode coupled to the organic material piezoelectric stress gate layer and a gate electrode coupled to the organic material piezoelectric stress gate layer. In some embodiments, the amorphous semiconductor channel layer may be amorphous indium gallium zinc oxide. In some embodiments, the organic material piezoelectric stress gate layer may be organic polyvinylidene fluoride. In some embodiments, the amorphous semiconductor channel layer may be formed on a flexible substrate.

A thin-film transistor may include an amorphous semiconductor channel layer, an organic material piezoelectric stress gate layer formed adjacent to the amorphous semiconductor channel layer, a source electrode coupled to the organic material piezoelectric stress gate layer, a drain electrode coupled to the organic material piezoelectric stress gate layer and a gate electrode coupled to the organic material piezoelectric stress gate layer. In some embodiments, the amorphous semiconductor channel layer may be amorphous indium gallium zinc oxide. In some embodiments, the organic material piezoelectric stress gate layer may be organic polyvinylidene fluoride. In some embodiments, the amorphous semiconductor channel layer may be formed on a flexible substrate.

A method for preparing a piezoelectric film includes: coating a solution containing a piezoelectric polymer and a solvent on a substrate to obtain a film, wherein the piezoelectric polymer is a copolymer of vinylidene fluoride and trifluoroethylene; and annealing the film at a temperature ranging from 122° C. to 133° C., to obtain the piezoelectric film.

A method for preparing a piezoelectric film includes: coating a solution containing a piezoelectric polymer and a solvent on a substrate to obtain a film, wherein the piezoelectric polymer is a copolymer of vinylidene fluoride and trifluoroethylene; and annealing the film at a temperature ranging from 122° C. to 133° C., to obtain the piezoelectric film.

A method for forming an electroactive device may include (i) depositing a curable material onto a primary electrode, (ii) curing the deposited curable material to form an electroactive polymer element comprising a cured elastomer material, and (iii) depositing an electrically conductive material onto a surface of the electroactive polymer element opposite the primary electrode to form a secondary electrode. The cured elastomer material may have a Poisson's ratio of between approximately 0.1 and approximately 0.35. Various other devices, methods, and systems are also disclosed.

A thin-film transistor includes a flexible substrate, an amorphous semiconductor channel layer on the flexible substrate, an organic material piezoelectric stress gate layer adjacent to the amorphous semiconductor channel layer, a gate electrode adjacent to the organic material piezoelectric stress gate layer, and a source electrode and drain electrode coupled to the organic material piezoelectric stress gate layer.