A thin-film transistor includes a flexible substrate, an amorphous semiconductor channel layer on the flexible substrate, an organic material piezoelectric stress gate layer adjacent to the amorphous semiconductor channel layer, a gate electrode adjacent to the organic material piezoelectric stress gate layer, and a source electrode and drain electrode coupled to the organic material piezoelectric stress gate layer.

The present invention provides piezoelectric bio-organic films resembling ceramic-based piezoelectric films, and also a fabrication method thereof. In particular, the bio-organic piezoelectric films are formed by compact nanocrystals resembling the inorganic ceramic structure, where nanocrystallization on biomaterials and in-situ electric field are applied to facilitate domain orientation alignment across the entire films. The present fabrication method provides flexibility to tune various parameters of the resulting bio-organic films according to the needs, and therefore is substantially applicable to a wide range of biomaterials to form piezoelectric bio-organic films comparable to those formed by conventional piezoceramics in terms of piezoelectricity, thermostability and durability.

The present invention provides piezoelectric bio-organic films resembling ceramic-based piezoelectric films, and also a fabrication method thereof. In particular, the bio-organic piezoelectric films are formed by compact nanocrystals resembling the inorganic ceramic structure, where nanocrystallization on biomaterials and in-situ electric field are applied to facilitate domain orientation alignment across the entire films. The present fabrication method provides flexibility to tune various parameters of the resulting bio-organic films according to the needs, and therefore is substantially applicable to a wide range of biomaterials to form piezoelectric bio-organic films comparable to those formed by conventional piezoceramics in terms of piezoelectricity, thermostability and durability.

A film comprising a piezoelectric polymer has an upper surface and a lower surface. The film has an active region comprising the piezoelectric polymer, which extends from the upper surface of the film to the lower surface of the film. The film also comprises an adhesive sheet, which defines part of the upper or lower surface of the film. Circuit sheets may be bonded to the upper and lower surfaces in a lamination process to produce a laminated piezoelectric device.

Sensing an environment by confining a monitored live subject in an enclosure, detecting an effect on a coaxial piezoelectric cable resulting from the monitored live subject, wherein the coaxial piezoelectric cable is located at least proximate to the enclosure, and deriving information about a state of the monitored live subject based on the detected effect.

An injection-molded article of polymer piezoelectric material includes: a helical chiral polymer constituted by a polymer chain and having a unit cell with an a-axis, a b-axis, and a c-axis as crystal axes, wherein b-axis<a-axis<c-axis in terms of lengths of the crystal axes, the c-axis is parallel to a long chain direction of the polymer chain, the helical chiral polymer is a crystal in which the b-axis is uniaxially oriented, and the injection-molded article has piezoelectricity.

A piezoelectric polymer article may be characterized by a Young's modulus of 5 GPa or greater along at least one dimension thereof. The piezoelectric polymer article may include polyvinylidene fluoride, for example, and may have a polydispersity index of at least 2. A piezoelectric coefficient of the polymer article, which may be a thin film or fiber, may be at least 20 pC/N.

Embodiments of the present disclosure provide a method for manufacturing a fingerprint recognition method, a fingerprint recognition module, and a display device. The method for manufacturing the fingerprint recognition module includes: providing a backplane; forming a bonding terminal in a bonding area of the backplane; forming a sensing electrode in a fingerprint recognition area of the backplane; forming an insulation layer cladding the bonding terminal in the bonding area, and forming a piezoelectric material layer in the fingerprint recognition area, where an orthographic projection of the piezoelectric material layer on the backplane coincides with an orthographic projection of the sensing electrode on the backplane; performing polarization processing on the piezoelectric material layer; and peeling off the insulation layer.

A piezoelectric device includes a membrane having fibres of a polyhydroxyalkanoate (PHA), having average diameter between 100 nm and 2000 nm, and at least one oxide having piezoelectric properties in a subdivided form having at least one average size between 1 nm and 100 nm. Preferably, the PHA fibres are produced by electrospinning. Advantageously, demonstrating good piezoelectric properties and considering that the piezoelectric device includes PHA, a biodegradable and biocompatible material, the device can be used in biological systems, for example in flexible micro-actuator systems for drug delivery and in the engineering of biological tissues (such as, for example, in pacemaker devices).

The present invention provides a polymer-based piezoelectric composite material from which a piezoelectric film capable of outputting a higher sound pressure is obtained in a case of using a piezoelectric speaker, a piezoelectric film formed of the polymer-based piezoelectric composite material, and a piezoelectric speaker and a flexible display which are formed of the piezoelectric film. The polymer-based piezoelectric composite material of the present invention is a polymer-based piezoelectric composite material including a polymer matrix which contains a polymer having a unit represented by Formula (1), and at least one unit selected from the group consisting of, a unit represented by Formula (2-1), a unit represented by Formula (2-2), and a unit represented by Formula (2-3), and piezoelectric particles.

(MO.sub.x/2)  Formula (1)

(R.sup.1SiO.sub.3/2)  Formula (2-1)

(R.sup.2.sub.2SiO.sub.2/2)  Formula (2-2)

(R.sup.3.sub.3SiO.sub.1/2)  Formula (2-3)