Patent classifications
H10N30/852
Piezoelectric transducers based on vertically aligned PZT and graphene nanoplatelets
A transducer is disclosed which includes lead zirconate titanate (PZT) particles mixed with graphene nanoplatelets (GNPs) in a flexible substrate aligned in a first direction, forming a transducer subsystem, a first conductive protective electrode having a width and a length providing an electrical connectivity to an external circuit, a second conductive protective electrode having the width and the length providing an electrical connectivity to the external circuit, wherein the transducer subsystem is sandwiched between the first and second conductive protective electrodes.
FLEXIBLE VIBRATION MODULE AND DISPLAY APPARATUS INCLUDING THE SAME
A flexible vibration module is disclosed. The flexible vibration module includes a piezoelectric composite layer, including: a plurality of piezoelectric portions each having a piezoelectric characteristic, where at least two of the plurality of piezoelectric portions have different sizes; and a flexible portion between the plurality of piezoelectric portions.
Method of manufacturing integrated circuit configured with two or more single crystal acoustic resonator devices
A method of fabricating a configurable single crystal acoustic resonator (SCAR) device integrated circuit. The method includes providing a bulk substrate structure having first and second recessed regions with a support member disposed in between. A thickness of single crystal piezo material is formed overlying the bulk substrate with an exposed backside region configured with the first recessed region and a contact region configured with the second recessed region. A first electrode with a first terminal is formed overlying an upper portion of the piezo material, while a second electrode with a second terminal is formed overlying a lower portion of the piezo material. An acoustic reflector structure and a dielectric layer are formed overlying the resulting bulk structure. The resulting device includes a plurality of single crystal acoustic resonator devices, numbered from (R1) to (RN), where N is an integer greater than 1.
Piezoelectric member, ultrasonic oscillation element, ultrasonic probe, ultrasound diagnostic system, and method for producing piezoelectric member
A piezoelectric member including metal electrodes with improved adhesiveness to piezoelectric elements is to be provided. A piezoelectric member 102 includes a piezoelectric element 21, and a pair of electrodes 41, 42 respectively formed on a pair of opposing surfaces 21b, 21c of the piezoelectric element 21. The electrodes 41, 42 includes: a base film 41a that is formed on the opposing surfaces 21b, 21c of the piezoelectric element 21 and contains a thiol group; a metal adhesive film 41b formed on the base film 41a; and an electrode film 41c that is formed on the metal adhesive film 41b and is for applying voltage to the piezoelectric element 21. The metal adhesive film 41b is formed with a different material from the electrode film 41c, and has a thickness of 1 to 10 nm.
PIEZOELECTRIC ELEMENT AND PIEZOELECTRIC SPEAKER
An object of the present invention is to provide a piezoelectric element capable of improving the sound pressure particularly in a high frequency band by decreasing the impedance in a case of being used as an electroacoustic transducer or the like, and a piezoelectric speaker formed of a piezoelectric film. The object can be achieved by using a piezoelectric film in which a piezoelectric layer containing piezoelectric particles in a polymer matrix is sandwiched between electrode layers, a planar shape is a polygon, the piezoelectric film has a protruding portion protruding from a side of a polygon other that a shortest side, and the protruding portion is provided with connecting portions for connecting an external power supply and an electrode layer or identical connecting portions are provided in the vicinity of end portions on a side other than the shortest side.
ELECTRIC FIELD-VIBRATION GENERATING TRANSDUCER HAVING PIEZOELECTRIC MATERIAL OF HIGH DEGREE OF DISPLACEMENT, AND MANUFACTURING METHOD THEREOF
Provided is an electric field-vibration generating transducer having a piezoelectric material of a high degree of displacement, and a manufacturing method thereof. The electric field-vibration generating transducer lowers the cost of production through miniaturization simultaneously with realizing excellent generating characteristics of the electric field-vibration generating transducer based on high efficiency and low voltage driving because the piezoelectric material of the high degree of displacement (high strain piezoelectrics) having a high piezoelectric constant (d.sub.33=1,000 to 6,000 pC/N), a high dielectric constant (K.sub.3.sup.T=6,000 to 15,000) as well as a low dielectric loss (tan δ<2%) is applied thereto, so the electric field-vibration generating transducer may accelerate the movement of a material, a chemical action, and a biological reaction, and may be applied to a medical device for the purpose of treatment for tumors aimed at human bodies and animals.
PIEZOELECTRIC STRUCTURES
A device for transmitting and receiving acoustic waves is provided herein. In one or more examples, the device comprises: a polymer infill; a first set of piezoelectric components, wherein the first set of piezoelectric components comprises one or more piezoelectric components, disposed in a first annular area interstitially in the polymer infill, the first annular area defined by a first inner ring and a first outer ring; a second set of piezoelectric components, wherein the second set of piezoelectric components comprises one or more piezoelectric components, disposed in a second annular area interstitially in the polymer infill, the second annular area defined by a second inner ring and second outer ring; and wherein the rings are spaced apart from each other radially based on one or more Gaussian distributions.
POLYMER-BASED PIEZOELECTRIC COMPOSITE MATERIAL FILM
Provided is a polymer-based piezoelectric composite material film which has high conversion efficiency and is capable of reproducing a sound with a sufficient volume. The polymer-based piezoelectric composite material film is a film including a polymer-based piezoelectric composite material which contains piezoelectric particles in a matrix containing a polymer material, and two electrode layers which are laminated on both surfaces of the polymer-based piezoelectric composite material, in which a coefficient of variation of intensity ratio α.sub.1 of (002) plane peak intensity and (200) plane peak intensity derived from the piezoelectric particles=(002) plane peak intensity/((002) plane peak intensity+(200) plane peak intensity) in a case where the polymer-based piezoelectric composite material is evaluated by an X-ray diffraction method is less than 0.3.
MASK
A mask that exhibits a more improved antibacterial effect by more efficiently expanding and contracting a body of the mask in the periphery of the nose and mouth area of the mask without using a drug such as an antibacterial agent and/or an antiviral agent. The mask includes: a body including a yarn having a potential generating filament; and at least one dart that extends from an edge portion of the body towards a central portion of the body.
Metal stack templates for suppressing secondary grains in sca1n
A metal stack for templating the growth of AlN and ScAlN films is disclosed. The metal stack comprises one, two, or three layers of metal, each of which is compatible with CMOS post-processing. The metal stack provides a template that promotes the growth of highly textured c-axis {002} AlN and ScAlN films. The metal stacks include one or more metal layers with each metal layer having either a hexagonal {002} orientation or a cubic {111} orientation. If the metal stack includes two or more metal layers, the layers can alternate between hexagonal {002} and cubic {111} orientations. The use of ScAlN results in a higher piezoelectric constant compared to that of AlN for ScAlN alloys up to approximately 44% Sc. The disclosed metal stacks resulted in ScAlN films having XRD FWHM values of less than approximately 1.1° while significantly reducing the formation of secondary grains in the ScAlN films.