Embodiments of the present disclosure relate to a display substrate, a method for manufacturing the same, and a display device. The display substrate includes a substrate, a pixel definition layer for defining pixels on the substrate, the pixel definition layer including a plurality of inter-pixel portions located between adjacent pixels, and a fingerprint recognition sensor located in the inter-pixel portions.

The present disclosure relates to an ultrasound transducer and a control method thereof. More particularly, the present disclosure is related to an ultrasound transducer for facilitating waste clearance of the brain lymphatic system and a control method thereof. A transducer according to the present disclosure includes: an oscillator including a plurality of Piezoelectric materials, and a polymer encompassing the plurality of Piezoelectric materials, and irradiating an ultrasound using at least one of the plurality of Piezoelectric materials and the polymer; a lens having a first space where at least a part of the oscillator is inserted, and focuses the applied ultrasound; and a housing supporting connection between the oscillator and the lens, wherein a height of the oscillator is longer than a height of the first space, a first height difference between the height of the oscillator and the height of the first space is inverse proportion to overall height of the lens, and a width of the oscillator is smaller than a width of the first space.

Provided are an electroacoustic transduction film in which conversion between a vibration and a voltage is able to be appropriately performed without the occurrence of dielectric breakdown of the air between upper and lower thin film electrodes even when a high voltage is applied therebetween, a user is able to be prevented from coming into contact with a piezoelectric layer, and high productivity is achieved, and a manufacturing method of an electroacoustic transduction film. A piezoelectric layer which stretches and contracts in response to a state of an electric field, an upper thin film electrode formed on one principal surface of the piezoelectric layer, a lower thin film electrode formed on the other principal surface of the piezoelectric layer, an upper protective layer formed on the upper thin film electrode, and a lower protective layer formed on the lower thin film electrode are included, and a groove which penetrates the thin film electrode and the protective layer is formed in at least a portion of an outer peripheral portion in a surface direction of at least one of the upper thin film electrode and the upper protective layer, or the lower thin film electrode and the lower protective layer.

A piezoelectric device includes a substrate that is flexible and thermally deformable, and a composite piezoelectric body disposed on the substrate. Output in accordance with deformation of the composite piezoelectric body is obtained. The composite piezoelectric body includes a piezoelectric layer containing an organic binder containing piezoelectric particles, a first electrode layer stacked on a first surface side of the piezoelectric layer, and a second electrode stacked on a second surface side of the piezoelectric layer. The substrate is insert molded and integrated with a molded resin body having a curved shape.

The present invention relates to a ferroelectric adhesive composition comprising from 2 to 50% of an adhesive matrix, from 5 to 85% of a ferroelectric component, wherein all weight percentages are based on weight of the total weight of the composition, and wherein said ferroelectric component is in a ferroelectric phase. The ferroelectric adhesive composition according to the present invention can be used as a sensor, an emitter or as a generator in an energy harvester. Furthermore, the present invention also encompasses a device comprising a ferroelectric adhesive composition according to the present invention between two conductive elements.

An electromechanical-transducing electronic component includes at least one element array of electromechanical transducer elements. A piezoelectric material of each transducer element is made of a composite oxide having a perovskite structure preferentially oriented to at least one of (100) and (001) planes and has a drop of diffraction intensity in a rocking curve corresponding to at least one of (200) and (002) planes measured at a position (2θ=θmax) of a diffraction peak intensity P where the diffraction intensity is largest in a diffraction intensity peak corresponding to the at least one of the (200) and (002) planes out of diffraction intensity peaks measured by an X-ray diffraction θ-2θ method. ΔP/P.sub.AVE is 20% or less where P.sub.AVE represents an average of the intensity P in the element array in the piezoelectric material of each transducer element and ΔP represents a maximum difference of the intensity P in the array.

A membrane switch in which a first conductive part is formed on a first substrate, a second conductive part is formed on a second substrate, and the substrates are layered via a spacer such that the conductive parts face each other with a space therebetween, and an organic material showing piezoelectricity is filled, or disposed in the space such that an air gap is present, are useful for obtaining an output signal corresponding to an applied pressure.

A mirror, in particular for a microlithographic projection exposure apparatus has an optically effective surface (11), a mirror substrate (12), a reflection layer stack (21) for reflecting electromagnetic radiation that is incident on the optical effective surface, and at least two piezoelectric layers (16a, 16b, 16c), which are arranged successively between the mirror substrate and the reflection layer stack in the stack direction of the reflection layer stack and to which an electric field can be applied to produce a locally variable deformation, wherein at least one intermediate layer (22a, 22b) made of crystalline material is arranged between the piezoelectric layers (16a, 16b, 16c), wherein the intermediate layer is designed to leave an electric field, which is present in the region of the piezoelectric layers (16a, 16b, 16c) that adjoin the intermediate layer (22a, 22b) in the stack direction of the reflection layer stack (21), substantially uninfluenced.

An energy generating device and a method of manufacturing the same are provided. The energy generating device includes a first electrode, a metal layer, including a regular arrangement of a plurality of patterns, disposed on the first electrode, an organic material layer positioned on the metal layer, and a piezoelectric layer interposed between the first electrode and the organic material layer.

A piezoelectric bulk wave device that includes a piezoelectric thin plate that is made of LiTaO.sub.3, and first and second electrodes that are provided in contact with the piezoelectric thin plate. The piezoelectric bulk wave device utilizes the thickness shear mode of the piezoelectric thin plate made of LiTaO.sub.3, and of the Euler Angles (φ, θ, φ) of LiTaO.sub.3, φ is 0°, and θ is in the range of not less than 54° and not more than 107°.