A piezoelectric device including a substrate, a metal-insulator-metal element, a hydrogen blocking layer, a passivation layer, a first contact terminal and a second contact terminal is provided. The metal-insulator-metal element is disposed on the substrate. The hydrogen blocking layer is disposed on the metal-insulator-metal element. The passivation layer covers the hydrogen blocking layer and the metal-insulator-metal element. The first contact terminal is electrically connected to the metal-insulator-metal element. The second contact terminal is electrically connected to the metal-insulator-metal element.

A piezoelectric device including a substrate, a metal-insulator-metal element, a hydrogen blocking layer, a passivation layer, a first contact terminal and a second contact terminal is provided. The metal-insulator-metal element is disposed on the substrate. The hydrogen blocking layer is disposed on the metal-insulator-metal element. The passivation layer covers the hydrogen blocking layer and the metal-insulator-metal element. The first contact terminal is electrically connected to the metal-insulator-metal element. The second contact terminal is electrically connected to the metal-insulator-metal element.

Provided is an aluminum nitride film in which, aluminum nitride crystal grains containing a metal element differing from aluminum and substituting for aluminum are main crystal grains of a polycrystalline film formed of crystal grains, and a concentration of the metal element in a grain boundary between the aluminum nitride crystal grains in at least one region of first and second regions corresponding to both end portions of the polycrystalline film in a film thickness direction of the polycrystalline film is higher than a concentration of the metal element in a center region of the aluminum nitride crystal grain in the at least one region, and is higher than a concentration of the metal element in a grain boundary between the aluminum nitride crystal grains in a third region located between the first region and the second region in the film thickness direction of the polycrystalline film.

A piezoelectric film laminated body includes a metal film, an amorphous film, and a scandium aluminum nitride film. The amorphous film has an insulation property and is disposed on the metal film. The scandium aluminum nitride film is disposed on the amorphous film and is in contact with a surface of the amorphous film.

Disclosed is a method for manufacturing a laminated piezoelectric composite. The method includes wet-mixing ceramic powder, a polymer binder, a plasticizer and a solvent for 4 to 72 hours so as to generate a mixed slurry, introducing the mixed slurry into a tape casting process so as to prepare a plurality of piezoelectric composite sheets, drying and forming the plurality of piezoelectric composite sheets using a roll-to-roll process so as to prepare the plurality of formed piezoelectric composite sheets, forming internal electrodes on the plurality of piezoelectric composite sheets so as to prepare the plurality of piezoelectric composite sheets having the internal electrodes, laminating and pressing the plurality of piezoelectric composite sheets having the internal electrodes so as to generate a piezoelectric composite sheet laminate having the internal electrodes, and cutting the piezoelectric composite sheet laminate having the internal electrodes into a desired shape and size.

A metal stack for templating the growth of AlN and ScAlN films is disclosed. The metal stack comprises one, two, or three layers of metal, each of which is compatible with CMOS post-processing. The metal stack provides a template that promotes the growth of highly textured c-axis {002} AlN and ScAlN films. The metal stacks include one or more metal layers with each metal layer having either a hexagonal {002} orientation or a cubic {111} orientation. If the metal stack includes two or more metal layers, the layers can alternate between hexagonal {002} and cubic {111} orientations. The use of ScAlN results in a higher piezoelectric constant compared to that of AlN for ScAlN alloys up to approximately 44% Sc. The disclosed metal stacks resulted in ScAlN films having XRD FWHM values of less than approximately 1.1° while significantly reducing the formation of secondary grains in the ScAlN films.

Provided is a piezoelectric ceramic composition including a potassium sodium niobate-based perovskite type complex oxide represented by Compositional Formula ABO.sub.3, as a main component. Further, the piezoelectric ceramic composition contains Bi in an A site and Zr in a B site. Further, the piezoelectric ceramic composition includes a segregation portion positioned in a crystal grain. At least one of Zr or Bi is localized in the segregation portion.

A method of forming a piezoelectric device may include depositing a sol-gel film over a substrate and curing the sol-gel film by impinging light onto an exposed surface of the sol-gel film to form a piezoelectric ceramic element. The method may produce a piezoelectric composite material including at least two piezoelectric ceramic pillars over the substrate. The at least two piezoelectric pillars may include at least one layer. The at least one layer having a gradient density, such that a first portion of the at least one layer proximate the substrate has a density lower than a second portion that is located a greater distance from the substrate than the first portion. The piezoelectric composite material may further include a resin separating the at least two piezoelectric ceramic pillars.

A reusable piezoelectric sensor for damage identification includes a piezoelectric ceramic plate and a metal box bonded to the surface of a test piece, where a wire through hole is formed in the center of a top plate of the metal box, and a side wall of the metal box extends vertically upwards to form a striking face for being struck to remove the metal box from the test piece; the piezoelectric ceramic plate arranged in the metal box is closely and fixedly bonded to a bottom plate of the metal box; and wires of the piezoelectric ceramic plate penetrate through the wire through hole to be connected to an external impedance analyzer. The reusable piezoelectric sensor for damage identification is easy to manufacture and convenient to operate and can effectively eliminate the testing error caused by the difference of the piezoelectric ceramic plate.

A micro-electromechanical system (MEMS) device comprises a fixed portion and a proofmass suspended by at least one composite beam. The composite beam is cantilevered relative to the fixed portion and extends between a first end that is integrally formed with the fixed portion and a second distal end. The composite beam comprises an insulator having a top surface and at least two side surfaces; a conductor extending away from the fixed portion and surrounding at least a portion of the insulator; and a second conductor positioned adjacent to the top surface of the conductor and extending parallel with the insulator away from the fixed portion. The second conductor is separated from the first conductor to provide a low parasitic conductance of the composite beam.