Patent classifications
H10N30/871
ELASTIC WAVE DEVICE
An elastic wave device in which a recess is provided on an upper side of a support, a piezoelectric thin film covers the recess, and an IDT electrode is provided on an upper surface of the piezoelectric thin film. A plate wave of an S0 mode or SH0 mode is used. A plurality of grooves are provided in the upper surface or lower surface of the piezoelectric thin film at a portion of the piezoelectric thin film that is positioned on a hollow section.
Ultrasound vibration device, method of manufacturing ultrasound vibration device, and ultrasound medical apparatus
An ultrasound vibration device is provided with a stacked transducer in which a plurality of piezoelectric single crystal element layers are stacked between two metal blocks. Since each of the two metal blocks and the plurality of piezoelectric single crystal element layers is fusion-bonded relative to a stack direction by bonding metal having a melting point corresponding to half a Curie point of the plurality of piezoelectric single crystal element layers or below, it is possible to use non-lead material, reduce a processing cost and realize inexpensiveness.
Piezoelectric sensor
The present invention provides a piezoelectric sensor that has elastic properties in a surface direction thereof, and can smoothly follow stretching of a body to be measured to accurately measure movement of the body to be measured, and detect movement in a surface direction of a surface of the body to be measured on which the piezoelectric sensor is disposed. The piezoelectric sensor of the present invention includes: a piezoelectric sheet including a porous synthetic resin sheet; a signal electrode layer that is layered on a surface of the piezoelectric sheet and contains conductive fine particles and a binder resin having elastic properties; and a ground electrode layer that is layered on another surface of the piezoelectric sheet and contains conductive fine particles and a binder resin having elastic properties.
THIN FILM PIEZOELECTRIC ELEMENT AND MANUFACTURING METHOD THEREOF
A manufacturing method of an epitaxial thin film piezoelectric element includes: providing a substrate; forming a bottom electrode layer on the substrate by epitaxial growth process; forming a first piezoelectric layer that has c-axis orientation on the bottom electrode layer by epitaxial growth process; forming a second piezoelectric layer that has c-axis orientation and different phase structure from the first piezoelectric layer on the first piezoelectric layer by epitaxial growth process; and forming a top electrode layer on the second piezoelectric layer. The thin film piezoelectric element has good thermal stability, low temperature coefficient and high piezoelectric constant.
METHOD FOR PRODUCING A PIEZOELECTRIC STACK ACTUATOR, AND PIEZOELECTRIC STACK ACTUATOR
A method for producing a piezoelectric stack actuator and a piezoelectric stack actuator are disclosed. To increase service life of a piezoelectric stack actuator made up of individual actuators, includes providing at least two actuators the method and designed and configured to generate a deflection along an axis (A) when electrically activated; and coupling the at least two actuators to form the stack actuator such that deflections of the actuators generated when the actuators are electrically activated are overlaid along a stacking axis (S) and there is a force-coupling of the actuators over at least one coupling area (K) that is smaller than a projection area (P) of the actuator onto a plane (E) perpendicular to the stacking axis.
Piezoelectric material, piezoelectric element, and electronic apparatus
A piezoelectric material contains a main component containing a perovskite-type metal oxide represented by general formula (1), a first sub-component containing Mn, and a second sub-component containing Bi or Bi and Li. A Mn content relative to 100 parts by weight of the metal oxide is 0.500 parts by weight or less (including 0 parts by weight) in terms of metal, a Bi content relative to 100 parts by weight of the metal oxide is 0.042 parts by weight or more and 0.850 parts by weight or less in terms of metal, and a Li content relative to 100 parts by weight of the metal oxide is 0.028 parts by weight or less (including 0 parts by weight) in terms of metal:
(Ba.sub.1−x−yCa.sub.xSn.sub.y).sub.α(Ti.sub.1−zZr.sub.z)O.sub.3 (where 0.020≦x≦0.200, 0.020≦y≦0.200, 0≦z≦0.085, 0.986≦α≦1.100) General formula (1).
ACOUSTIC RESONATOR AND METHOD OF MANUFACTURING THE SAME
An acoustic resonator includes: a substrate; a resonance part including a lower electrode, a piezoelectric layer, and an upper electrode sequentially stacked on the substrate, and a frame formed on the upper electrode along an edge of the upper electrode; and a trench part formed in at least one side of the resonance part and making a thickness of the resonance part asymmetrical.
PIEZOELECTRIC MICRO-ELECTROMECHANICAL SYSTEM (MEMS)
A Microelectromechanical System (MEMS) device which includes a piezoelectric stack on a substrate separated by a dielectric layer is disclosed. The piezoelectric stack includes first and second piezoelectric layers with a first electrode below the first piezoelectric layer and a contact pad and a second electrode between the first and second piezoelectric layers. A first contact extends through the piezoelectric layers and contact pad to the first electrode and a second contact extends through the second piezoelectric layer to the second electrode. The contact pad prevents an interface to form between the first and second piezoelectric layers in the contact opening, thus preventing corrosion of the piezoelectric layers during contact formation process.
Method for producing a piezoelectric multilayer component and a piezoelectric multilayer component
A piezoelectric multilayer component having a stack of sintered piezoelectric layers and inner electrodes arranged between the piezoelectric layers. A region which has poling cracks is present on the surface of at least one electrode, and the poling cracks are separated from a surface of at least one of the inner electrodes by the region having the poling cracks.
PIEZOELECTRIC DEVICE AND METHOD FOR MANUFACTURING THE SAME
A lead-out wiring, which is connected to a comb-shaped electrode formed on a principal surface of a piezoelectric substrate and is disposed to extend to an outer edge of the piezoelectric substrate an outer surrounding wall layer, which is arranged surrounding an outer periphery of the piezoelectric substrate including the lead-out wiring and forms a hollow portion that serves as an operation space for the comb-shaped electrode, and a top board, which bridges the outer surrounding wall layer to seal the hollow portion, are included.