A bulk-acoustic resonator module includes: a module substrate; a bulk-acoustic resonator connected to the module substrate by a connection terminal and disposed spaced apart from the module substrate; and a sealing portion sealing the bulk-acoustic resonator. The bulk-acoustic resonator includes a resonating portion disposed opposite to an upper surface of the module substrate. A space is disposed between the resonating portion and the upper surface of the module substrate.

To provide a piezoelectric film that is less likely to be electrified and that can be safely handled. A multilayered film according to an embodiment of the present invention including: a piezoelectric film containing polyvinylidene fluoride; and a protective film including an antistatic layer, the piezoelectric film and the protective film being bonded.

An object of the present invention is to provide a cut sheet-like piezoelectric film which includes electrode layers on both surfaces of a piezoelectric layer and is capable of preventing a short circuit of the electrode layers. The object is achieved by providing a cut sheet-like piezoelectric film including a piezoelectric layer which contains piezoelectric particles in a matrix containing a polymer material, and electrode layers which are provided on both surfaces of the piezoelectric layer, in which a distance between the electrode layers at an end portion in a thickness direction is 40% or greater with respect to a thickness of the piezoelectric layer.

A substrate having a recessed portion, a diaphragm, and a piezoelectric actuator are provided, the diaphragm includes a first layer containing silicon as a constituent element, and a third layer disposed between the first layer and the piezoelectric actuator and containing zirconium as a constituent element, and a laminated side surface of the first layer and the third layer is covered with a moisture-resistant protective film containing at least one selected from the group made of oxide, nitride, metal, and diamond-like carbon.

A plurality of conductive via connections are fabricated on a substrate located at positions where MTJ devices are to be fabricated, wherein a width of each of the conductive via connections is smaller than or equivalent to a width of the MTJ devices. The conductive via connections are surrounded with a dielectric layer having a height sufficient to ensure that at the end of a main MTJ etch, an etch front remains in the dielectric layer surrounding the conductive via connections. Thereafter, a MTJ film stack is deposited on the plurality of conductive via connections surrounded by the dielectric layer. The MTJ film stack is etched using an ion beam etch process (IBE), etching through the MTJ film stack and into the dielectric layer surrounding the conductive via connections to form the MTJ devices wherein by etching into the dielectric layer, re-deposition on sidewalls of the MTJ devices is insulating.

A piezoelectric device includes a first substrate including a first surface on which piezoelectric elements and a common terminal coupled to the piezoelectric elements are placed, a second substrate including a second surface on which a common connecting terminal coupled to a control circuit is placed, a third substrate placed between the first substrate and the second substrate and including a third surface joined to the first surface and a fourth surface facing the second surface, and bonding portions bonding the second substrate and the third substrate by an adhesive, wherein the third substrate includes a first through hole penetrating from the third surface to the fourth surface and a first through electrode provided in the first through hole and coupled to the common terminal, the common connecting terminal is coupled to the first through electrode and electrically coupled to the common terminal via the first through electrode, and the second substrate includes a wall suppressing an outflow of the adhesive on the second surface facing the third substrate.

The present disclosure provides a method for forming piezoelectric films on surfaces of arbitrary morphologies. The method includes providing a sol for forming the piezoelectric film; spraying the sol onto the surface thereby forming a liquid film containing the sol on the surface; wiping the liquid film with a flattening tool for flattening the liquid film; drying the flattened liquid film thereby forming a gel layer; and annealing the gel layer thereby forming the piezoelectric film. The piezoelectric films with high uniformity and desired thickness can be formed on curved and even wrinkled surfaces by the present method.

An object of the present invention is to provide a piezoelectric polymer film having excellent piezoelectric characteristics. The object is achieved by providing a piezoelectric polymer film including a piezoelectric layer containing lead zirconate titanate particles in a matrix that contains a polymer material, and an electrode layer provided on each of both surfaces of the piezoelectric layer, in which a Raman shift of a maximum peak present in a range of 190 to 215 cm.sup.−1 in a Raman spectrum of the piezoelectric layer is 205 cm.sup.−1 or less.

A sensing film includes a base layer, a piezoelectric layer formed on the base layer, and a first electrode and a second electrode formed on the piezoelectric layer. The first and second electrodes are spaced apart and electrically insulated from each other. The first electrode includes a first connecting portion and a number of first extending portions coupled to the first connecting portion. The second electrode includes a second connecting portion and a number of second extending portions coupled to the second connecting portion. The first connecting portion and the second connecting portion are spaced apart and face each other. The first extending portions extend from a side of the first connecting portion toward the second connecting portion. The second extending portions extend from a side of the second connecting portion toward the first connecting portion. The first extending portions and the second extending portions are alternately arranged.

Provided is a fluid viscosity measuring device including a support structure having an opening part, the opening part penetrating the support structure in a first direction, a driving resonator fixed to the support structure and extending to overlap the opening part, and a detection resonator fixed to the support structure and extending parallel to the driving resonator, the detection resonator being spaced apart from the driving resonator in the first direction. The driving resonator includes a first piezoelectric body. The detection resonator includes a second piezoelectric body. The first piezoelectric body and the second piezoelectric body have the same shape.