A mixed semiconductor-superconductor platform is fabricated in phases. In a masking phase, a dielectric mask is formed on a substrate, such that the dielectric mask leaves one or more regions of the substrate exposed. In a selective area growth phase, a semiconductor material is selectively grown on the substrate in the one or more exposed regions. in a superconductor growth phase, a layer of superconducting material is formed, at least part of which is in direct contact with the selectively grown semiconductor material. The mixed semiconductor-superconductor platform comprises the selectively grown semiconductor material and the superconducting material in direct contact with the selectively grown semiconductor material.

A superconducting wire includes a multilayer stack and a covering layer (stabilizing layer or protective layer). The multilayer stack includes a substrate having a main surface and a superconducting material layer formed on the main surface. The covering layer (stabilizing layer or protective layer) is disposed on at least the superconducting material layer. A front surface portion of the covering layer (stabilizing layer or protective layer) located on the superconducting material layer (front surface portion of the stabilizing layer or upper surface of the protective layer) has a concave shape.

Provided is a connection body of high-temperature superconducting wire materials including a first oxide high-temperature superconducting wire material and a second oxide high-temperature superconducting wire material, characterized in that a first superconducting layer of the first oxide high-temperature superconducting wire material and a second superconducting layer of the second oxide high-temperature superconducting wire material are bonded together via a junction including M-CuO (wherein M is a single metal element or a plurality of metal elements included in the first superconducting layer or the second superconducting layer). The connection body may be, for example, a connection body of Bi2223 wire materials, and the junction may include CaCuO.sub.2.

Various fabrication method are disclosed. In one such method, at least one structure is formed on a substrate which protrudes outwardly from a plane of the substrate. A beam is used to form a layer of material, at least part of which is in direct contact with a semiconductor structure on the substrate, the semiconductor structure comprising at least one nanowire. The beam has a non-zero angle of incidence relative to the normal of the plane of the substrate such that the beam is incident on one side of the protruding structure, thereby preventing a portion of the nanowire in a shadow region adjacent the other side of the protruding structure in the plane of the substrate from being covered with the material.

A superconducting layer joint structure of embodiments includes: a first superconducting layer; a second superconducting layer; and a joint layer provided between the first superconducting layer and the second superconducting layer and containing a plurality of crystal particles containing a rare earth element (RE), barium (Ba), copper (Cu), and oxygen (O). The plurality of crystal particles includes at least one first particle. The at least one first particle has a first inner region and a first outer region. The first inner region is disposed inside the first superconducting layer. The first outer region is disposed outside the first superconducting layer.

An ultra-thin film superconducting tape and method for fabricating same is disclosed. Embodiments are directed to a superconducting tape being fabricated by processes which include removing a portion of the superconducting tape's substrate subsequent the substrate's initial formation, whereby a thickness of the superconducting tape is reduced to 15-80 m.

A second-generation high temperature superconducting (HTS) strip and a preparation method thereof are provided. The second-generation HTS strip includes a superconducting strip body and a stabilizing layer arranged thereon. The stabilizing layer is a copper-graphene composite film with a total thickness of 2-30 microns on one side. The superconducting strip may be obtained by the preparation method of: (1) putting a superconducting strip body into a magnetron sputtering reaction chamber, followed by pumping to a high-level vacuum and filling with a working gas; (2) using copper and graphene as targets, and performing a sputter coating by controlling a magnetron sputtering power, to deposit the targets onto at least one surface of the superconducting strip body. The prepared HTS strips containing copper-graphene stabilizing layer with high strength and high conductivity may have 30%-70% higher tensile strength than conventional copper plated superconducting strips, with less than 10% IACS attenuation in conductivity.

A mixed semiconductor-superconductor platform is fabricated in phases. In a masking phase, a dielectric mask is formed on a substrate, such that the dielectric mask leaves one or more regions of the substrate exposed. In a selective area growth phase, a semiconductor material is selectively grown on the substrate in the one or more exposed regions. In a superconductor growth phase, a layer of superconducting material is formed, at least part of which is in direct contact with the selectively grown semiconductor material. The mixed semiconductor-superconductor platform comprises the selectively grown semiconductor material and the superconducting material in direct contact with the selectively grown semiconductor material.

A superconducting wire includes a multilayer stack and a covering layer (stabilizing layer or protective layer). The multilayer stack includes a substrate having a main surface and a superconducting material layer formed on the main surface. The covering layer (stabilizing layer or protective layer) is disposed on at least the superconducting material layer. A front surface portion of the covering layer (stabilizing layer or protective layer) located on the superconducting material layer (front surface portion of the stabilizing layer or upper surface of the protective layer) has a concave shape.

A tape type superconductor (1), extending in longitudinal direction (LD), includes a substrate tape (2), at least one buffer layer (3), a superconductor layer (4), and plural elongated barrier structures (5, 5a, 5b). The superconductor layer has a width W.sub.SL in a direction (WD) that is perpendicular to the longitudinal direction and runs parallel to a flat side (8) of the substrate tape. The tape type superconductor has a longitudinal length L.sub.TTS t, and the elongated barrier structures are oriented in parallel with the longitudinal direction. A respective barrier structure has a longitudinal length L.sub.BS, with L.sub.BS0.20*W.sub.SL and L.sub.BS0.20*L.sub.TTS. The barrier structures are distributed longitudinally, are located at least partially in the superconductor layer, and impede a superconducting current flow in width direction across a respective barrier structure. This tape type superconductor achieves high critical currents simply and over extended tape lengths with suppressed magnetization.