Electrical devices operating in a range of 273 C. to 100 C. are disclosed. The devices include an insulating substrate. A U0.sub.2+x crystal or oriented crystal U0.sub.2+x film is on a first portion of the substrate. The U0.sub.2+x crystal or film originates and hosts a non-equilibrium polaronic quantum phase-condensate. A first lead on a second portion of the substrate is in electrical contact with the U0.sub.2+x crystal or film. A second lead on a third portion of the surface is in electrical contact with the U0.sub.2+x crystal or film. The leads are isolated from each other. A U0.sub.2+x excitation source is in operable communication with the UO.sub.2+x crystal or film. The source is configured to polarize a region of the crystal or film thereby activating the non-equilibrium quantum phase-condensate. One source state causes the UO.sub.2+x crystal or film to be conducting. Another source state causes the U0.sub.2+x crystal or film to be non-conductive.

Provided is a new solid oxygen ionic conductor based field-effect transistor and its manufacturing method. The field-effect transistor includes: a substrate; a gate dielectric layer located on the substrate, where the gate dielectric layer is a solid oxygen ionic conductor thin film; a channel layer covered on a part of the gate dielectric layer; and a source electrode and a drain electrode respectively located on the gate dielectric layer not covered by the channel layer and on a part of the channel layer.

Disclosed herein are fabrication techniques for providing metal gates in quantum devices, as well as related quantum devices. For example, in some embodiments, a method of manufacturing a quantum device may include providing a gate dielectric over a qubit device layer, providing over the gate dielectric a pattern of non-metallic elements referred to as gate support elements, and depositing a gate metal on sidewalls of the gate support elements to form a plurality of gates of the quantum device.

Disclosed herein are quantum dot devices, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a quantum well stack including a quantum well layer and a barrier layer; a first gate metal above the quantum well stack, wherein the barrier layer is between the first gate metal and the quantum well layer; and a second gate metal above the quantum well stack, wherein the barrier layer is between the second gate metal and the quantum well layer, and a material structure of the second gate metal is different from a material structure of the first gate metal.

Disclosed herein are fabrication techniques for providing metal gates in quantum devices, as well as related quantum devices. For example, in some embodiments, a method of manufacturing a quantum device may include providing a gate dielectric over a qubit device layer, providing over the gate dielectric a pattern of non-metallic elements referred to as gate support elements, and depositing a gate metal on sidewalls of the gate support elements to form a plurality of gates of the quantum device.

The various embodiments described herein include methods, devices, and systems for fabricating and operating transistors. In one aspect, a transistor includes: (1) a semiconducting component configured to operate in an on state at temperatures above a semiconducting threshold temperature; and (2) a superconducting component configured to operate in a superconducting state while: (a) a temperature of the superconducting component is below a superconducting threshold temperature; and (b) a first current supplied to the superconducting component is below a current threshold; where: (i) the semiconducting component is located adjacent to the superconducting component; and (ii) in response to a first input voltage, the semiconducting component is configured to generate an electromagnetic field sufficient to lower the current threshold such that the first current exceeds the lowered current threshold, thereby transitioning the superconducting component to a non-superconducting state.

The various implementations described herein include methods, devices, and systems for detecting light. In one aspect, a photodetector device includes: a superconducting wire, and a transistor that includes a semiconducting component and a superconducting component. The superconducting wire is electrically coupled to the superconducting component. The semiconducting component is located adjacent to the superconducting component. The superconducting component is configured to, in response to receiving an input current exceeding a current threshold, transition from a superconducting state to a non-superconducting state and generate heat sufficient to increase a temperature of the semiconducting component from a temperature below a semiconducting threshold temperature to a temperature above the semiconducting threshold temperature.

The various embodiments described herein include methods, devices, and systems for fabricating and operating transistors. In one aspect, a transistor includes: (1) a semiconducting component configured to operate in an on state at temperatures above a semiconducting threshold temperature; and (2) a superconducting component configured to operate in a superconducting state while: (a) a temperature of the superconducting component is below a superconducting threshold temperature; and (b) a first current supplied to the superconducting component is below a current threshold; where: (i) the semiconducting component is located adjacent to the superconducting component; and (ii) in response to a first input voltage, the semiconducting component is configured to generate an electromagnetic field sufficient to lower the current threshold such that the first current exceeds the lowered current threshold, thereby transitioning the superconducting component to a non-superconducting state.

Superconducting Meissner effect transistors, methods of modulating, and systems are disclosed. In one aspect a disclosed transistor includes a superconducting bridge between a first and a second current probe, the first and second current probe being electrically connected to a source and a drain electrical connection, respectively and a control line configured to emit a magnetic field signal having signal strength H.sub.sig at the superconducting bridge. In one aspect the emitted magnetic field is configured to break Cooper pairs in the superconducting bridge.