A device, system and method for measuring the temperature at the center of a normal hotspot and the heat escape time in superconducting filament or nanowire toward the substrate. The device includes structured layers; a superconducting filament is implemented as an active layer where an electrical current pulse or single photon radiation generates a hot spot; a sensitive semiconductor layer of germanium serves as a temperature sensor (thermometer); and a thin layer of insulating silicon oxide is intercalated between the superconducting layer and the germanium having a thickness in the range of 2-10 nm and width 5-100 μm. This device provides a direct measurement of the temperature at the center of a hot spot and determination of the heat escape time toward a substrate; and can be used to determine the sensitivity of a superconducting single photon detector device to a next upcoming photon.

A physical vapor deposition system includes a chamber, three target supports to targets, a movable shield positioned having an opening therethrough, a workpiece support to hold a workpiece in the chamber, a gas supply to deliver nitrogen gas and an inert gas to the chamber, a power source, and a controller. The controller is configured to move the shield to position the opening adjacent each target in turn, and at each target cause the power source to apply power sufficient to ignite a plasma in the chamber to cause deposition of a buffer layer, a device layer of a first material that is a metal nitride suitable for use as a superconductor at temperatures above 8° K on the buffer layer, and a capping layer, respectively.

The present disclosure provides a method for making a single photon detector with a modified superconducting nanowire. The method includes: preparing a substrate; modifying a superconducting nanowire with stress on a surface of the substrate; and fabricating a superconducting nanowire single photon detector based on the superconducting nanowire with stress. Based on the above technical solution, in the superconducting nanowire single photon detector provided by the present disclosure, the device material layer film has a certain thickness, the critical temperature of the device material can be reduced, the uniformity of the device material and small superconducting transition width are ensured, thereby improving the detection efficiency of the device.

A tunable oscillator including a Josephson junction. In some embodiments, the tunable oscillator includes a first superconducting terminal, a second superconducting terminal, a graphene channel including a portion of a graphene sheet, and a conductive gate. The first superconducting terminal, the second superconducting terminal, and the graphene channel together may form a Josephson junction having an oscillation frequency, and the conductive gate may be configured, upon application of a voltage across the conductive gate and the graphene channel, to modify the oscillation frequency.

The invention relates to power systems. More particularly, the invention relates to electric vehicle battery charging systems. In the invention a superconducting conductor is used to charge the electric car battery, resulting in a short charging time.

An oxide superconductor of an embodiment includes an oxide superconducting layer including at least one superconducting region containing barium (Ba), copper (Cu) and a first rare earth element, having a continuous perovskite structure, and having a size of 100 nm×100 nm×100 nm or more, and a non-superconducting region in contact with the at least one superconducting region, containing praseodymium (Pr), barium (Ba), copper (Cu),and a second. rare earth element, having a ratio of a number of atoms of the praseodymium (Pr) to a sum of a number of atoms of the second rare earth element and the number of atoms of the praseodymium (Pr) being 20% or more, having a continuous perovskite structure continuous with the continuous perovskite structure of the superconducting region, and having a size of 100 nm×100 nm×100 nm or more.

An oxide superconducting wire includes: a substrate having a main surface; a superconducting layer disposed above the substrate and formed of a rare-earth high-temperature superconductor; and a protective layer disposed on the superconducting layer and in contact with the superconducting layer. An a-axis direction is oriented perpendicular to the main surface of the substrate. The superconducting layer includes a-axis oriented grains oriented along the a-axis direction. An a-axis oriented grain ratio is defined as a proportion of the a-axis oriented grains to an entirety of crystal grains forming the superconducting layer. The a-axis oriented grain ratio is greater than or equal to 4.1% and less than or equal to 11.9%.

Superconductors and processes that form superconductors as composites of electrically polarizable ferroelectric materials and electrically conductive materials. The materials are chosen such that the binding energy of charge carriers within the materials exceeds the repulsive energy of the carriers and the energy carried by thermal vibrations (phonons) within the materials.

A bistable device allows supercurrent to flow when functioning in one regime, wherein magnetization directions of different magnetic layers are antiparallel, but restricts supercurrent when switched to function in a resistive regime, wherein the magnetization directions are parallel. In the first regime, the device acts as a Josephson junction, which allows it to be used in superconducting quantum interference devices (SQUIDs) and other circuits in which quantization of magnetic flux in a superconducting loop is desired. In the second, resistive regime, flux quantization is effectively eliminated in loops containing the device, and current is diverted to parallel superconducting components. The bistable device thereby acts as a superconducting switch, useful for a variety of circuit applications, including to steer current for memory or logic circuits, adjust logical circuit functionality at runtime, or to burn off stray flux during cooldown.

A qubit coupling device includes: a dielectric substrate including a trench; a first superconductor layer on a surface of the dielectric substrate where an edge of the first superconductor layer extends along a first direction and at least a portion of the superconductor layer is in contact with the surface of the dielectric substrate, and where the superconductor layer is formed from a superconductor material exhibiting superconductor properties at or below a corresponding critical temperature; a length of the trench within the dielectric substrate is adjacent to and extends along an edge of the first superconductor layer in the first direction, and where the electric permittivity of the trench is less than the electric permittivity of the dielectric substrate.