A low-power phase-change memory (PCM) technology with interfacial thermoelectric heating (TEH) enhancement is provided. Embodiments described herein leverage a substantial, positive thermoelectric coefficient in PCM materials to generate additional heating or cooling at an interface with another material, enabling memory switching with a large reduction in current and power. Interfacial thermoelectric engineering is applied to a PCM cell using a special class of thermoelectric materials with large negative Seebeck coefficients (e.g., bismuth telluride (Bi.sub.2Te.sub.3), lead telluride (PbTe), lanthanum telluride (La.sub.3Te.sub.4), indium selenide (InSe), silicon-germanium (Si.sub.0.8Ge.sub.0.2)) to induce efficient heating at significantly lowered power and current.

Memory devices and methods of forming the same are provided. A memory device includes a substrate, a first conductive layer, a phase change layer, a selector layer and a second conductive layer. The first conductive layer is disposed over the substrate. The phase change layer is disposed over the first conductive layer. The selector layer is disposed between the phase change layer and the first conductive layer. The second conductive layer is disposed over the phase change layer. In some embodiments, at least one of the phase change layer and the selector layer has a narrow-middle profile.

A method is presented for reducing a reset current for a phase change memory (PCM). The method includes forming a bottom electrode, constructing a PCM cell structure including a plurality of phase change memory layers and a plurality of heat transfer layers, wherein the plurality of phase change memory layers are assembled in an alternating configuration with respect to the plurality of heat transfer layers, and forming a top electrode over the PCM cell structure. The plurality of phase change memory layers are arranged perpendicular to the top and bottom electrodes. Additionally, airgaps are defined adjacent the PCM cell structure.

A dielectric isolation layer having a top surface may be formed over a substrate. A heater line, a phase change material (PCM) line, and an in-process conductive barrier plate may be formed over the dielectric isolation layer. An electrode material layer may be formed over the in-process conductive barrier plate. The electrode material layer and the in-process conductive barrier plate may be patterned such that patterned portions of the in-process conductive barrier plate include a first conductive barrier plate contacting a first area of a top surface of the PCM line, and a second conductive barrier plate contacting a second area of the top surface of the PCM line, and patterned portions of the electrode material layer include a first electrode contacting the first conductive barrier plate and a second electrode contacting the second conductive barrier plate.

A semiconductor device includes a base structure of a memory device including a first electrode, first dielectric material having a non-uniform etch rate disposed on the base structure, a via within the first dielectric material, and a ring heater within the via on the first electrode. The ring heater has a geometry based on a shape of the via that produces a resistance gradient.

In a first approach, a reconfigurable radio frequency (RF) filtering module includes a phase-change material (PCM) RF switch bank and an RF filter bank. Each RF filter in the RF filter bank is capable to be engaged and disengaged by a PCM RF switch in the PCM RF switch bank. In a second approach, a tunable RF filter includes PCM RF switches and a capacitor and/or an inductor. Each of the capacitor and/or inductor is capable to be engaged and disengaged by at least one PCM RF switch of the PCM RF switches. In a third approach, an adjustable passive component includes multiple segments and a PCM RF switch. A selectable segment in the multiple segments is capable to be engaged and disengaged by the PCM RF switch. In all approaches, each PCM RF switch includes a PCM and a heating element transverse to the PCM.

A high-yield, tunable radio frequency (RF) filter includes a plurality of process-dependent capacitors and a plurality of non-volatile RF switches. Each of the plurality of process-dependent capacitors is connected to at least one of the plurality of non-volatile RF switches. An auxiliary capacitor in the plurality of process-dependent capacitors is engaged by an ON-state non-volatile RF switch in the plurality of non-volatile RF switches. A primary capacitor in the plurality of process-dependent capacitors is disengaged by an OFF-state non-volatile RF switch in the plurality of non-volatile RF switches. The auxiliary capacitor substitutes for the primary capacitor.

A resistive memory device is provided. The resistive memory device comprises a first electrode and a resistive layer over the first electrode, the resistive layer having a sidewall. A second electrode is over the resistive layer. An insulating liner is formed on the sidewall of the resistive layer. The insulating liner comprises two layers of different dielectric materials.

A switching device includes first and second RF terminals disposed over a substrate, one or more strips of phase change material connected between the first and second RF terminals, a region of thermally insulating material that separates the one or more strips of phase change material from the substrate, and a heater structure comprising one or more heating elements that are configured to control a conductive connection between the first and second RF terminals by applying heat to the one or more strips of phase change material. Each of the one or more strips of phase change material includes a first outer face and a second outer face opposite from the first outer face. For each of the one or more strips of phase change material, at least portions of both of the first and second outer faces are disposed against one of the heating elements.

Aspects of the present disclosure are directed to a reconfigurable interference device comprising a phase change structure. The phase change structure comprises a solid-state phase change material having a first phase state and a second phase state dependent on temperature. A first energy source is configured to supply an initialization energy to initialize a plurality of domains having the first phase state and a second energy source is configured to supply an electrical current to the structure to position the plurality of domains of the first phase state within the phase change structure. A control unit is configured to control the first and the second energy source and to create a periodic interference pattern comprising a plurality of domains of the first phase state and a plurality of domains of the second phase state in an alternating pattern.