A method of forming a phase change switching device includes providing a substrate, forming first and second RF terminals on the substrate, forming a strip of phase change material on the substrate that is connected between the first and second RF terminals, forming a heating element adjacent to the strip of phase change material such that the heating element is configured to control a conductive state of the strip of phase change material. The first and second RF terminals and the heating element are formed by a lithography process that self-aligns the heating element with the first and second RF terminals.

A resistive random-access memory (ReRAM) device may include a thermally engineered layer that is positioned adjacent to an active layer and configured to act as a heat sink during filament formation in response to applied voltages. The thermally engineered layer may act as one of the electrodes on the ReRAM device and may be adjacent to any side of the active layer. The active layer may also include a plurality of individual active layers. Each of the active layers may be associated with a different dielectric constant, such that the middle active layer has a dielectric constant that is significantly higher than the other two surrounding active layers.

The present disclosure, in some embodiments, relates to a memory device. The memory device includes a dielectric protection layer having sidewalls defining an opening over a conductive interconnect within an inter-level dielectric (ILD) layer. A bottom electrode structure extends from within the opening to directly over the dielectric protection layer. A variable resistance layer is over the bottom electrode structure and a top electrode is over the variable resistance layer. A top electrode via is disposed on the top electrode and directly over the dielectric protection layer.

A semiconductor device includes a base structure of a memory device including a first electrode, first dielectric material having a non-uniform etch rate disposed on the base structure, a via within the first dielectric material, and a ring heater within the via on the first electrode. The ring heater has a geometry based on a shape of the via that produces a resistance gradient.

A phase change material switch includes a phase change layer disposed on a metal liner. A gate dielectric layer is disposed on the phase change layer. A metal gate liner is disposed on the gate dielectric layer.

A resistor-assembly includes a substrate, a heater, a resistor-element, and conductive-leads. The substrate is formed of a ceramic-material. The heater heats the resistor-assembly. The resistor-element is formed of an ion-conducting material that overlies the substrate. The conductive-leads are formed of a catalytic-metal that are in communication with a gas and in electrical contact with the resistor-element. The resistor-element is characterized by a resistance-value influenced by an oxygen-presence in the gas when the resistor-element is heated by the heater such that a resistor-temperature is greater than a temperature-threshold.

A storage device includes a memory cell including a variable resistance element and a switching element having snapback current-voltage characteristics. The switching element includes a first conductive layer in contact with the variable resistance element, a second conductive layer, and a switching layer provided between the first conductive layer and the second conductive layer. The switching layer includes at least one switching member and a first insulating layer having a thermal conductivity higher than 1.4 W/m/K. A cross-sectional area of the switching member at a connection surface between the switching layer and the first conductive layer and a cross-sectional area of the switching member at a connection surface between the switching layer and the second conductive layer are each smaller than a cross-sectional area at a connection surface between the first conductive layer and the variable resistance element.

Disclosed semiconductor devices include a substrate, a device pattern structure disposed over the substrate, and a heat insulating layer disposed on the device pattern structure. The device pattern structure includes metal-organic frameworks.

Methods and structures for fabricating a semiconductor device that includes a reduced programming current phase change memory (PCM) are provided. The method includes forming a bottom electrode. The method further includes forming a PCM and forming a conductive bridge filament in a dielectric to serve as a heater for the PCM. The method also includes forming a top electrode.

Resistive elements for PCM RPUs and techniques for fabrication thereof using trench depth pattering are provided. In one aspect, an RPU device includes: a first electrode; a second electrode; a heater; and a PCM disposed over the first electrode, the second electrode and the heater, wherein the heater includes a combination of a first material having a resistivity r1 and a second material having a resistivity r2, wherein r1>r2, and wherein only the first material is present beneath the PCM and forms a resistive heating element. A method of operating an RPU device is also provided.