A voltage-nonlinear resistor element 10 includes a voltage-nonlinear resistor (referred simply as resistor) 20 and a pair of electrodes 14 and 16 between which the resistor 20 is interposed. The resistor 20 has a multilayer structure including a first layer 21 composed primarily of zinc oxide, a second layer 22 composed primarily of zinc oxide, and a third layer 23 composed primarily of a metal oxide other than zinc oxide. The second layer 22 is adjacent to the first layer 21 and has a smaller thickness and a higher volume resistivity than the first layer 21. The third layer 23 is adjacent to the second layer 22.

A varistor can include a monolithic body including a plurality of dielectric layers stacked in a Z-direction that is perpendicular to a longitudinal direction. The monolithic body can have a first end and a second end that is spaced apart from the first end in the longitudinal direction. A first external terminal can be disposed along the first end. A second external terminal can be disposed along the second end. A first plurality of electrodes can be connected with the first external terminal and can extend from the first end towards the second end of the monolithic body. A second plurality of electrodes can be connected with the second external terminal and can extend from the second end towards the first end of the monolithic body. At least one of the first external terminal or the second external terminal can include a conductive polymeric composition.

A varistor can include a monolithic body including a plurality of dielectric layers stacked in a Z-direction that is perpendicular to a longitudinal direction. The monolithic body can have a first end and a second end that is spaced apart from the first end in the longitudinal direction. A first external terminal can be disposed along the first end. A second external terminal can be disposed along the second end. A first plurality of electrodes can be connected with the first external terminal and can extend from the first end towards the second end of the monolithic body. A second plurality of electrodes can be connected with the second external terminal and can extend from the second end towards the first end of the monolithic body. At least one of the first external terminal or the second external terminal can include a conductive polymeric composition.

A process for producing a multilayer varistor (MLV) if remained its size unchanged as prior arts is favorable to outstandingly increase overall current-carrying area and improve the performance of final produced MLV; and the MLV has laminated a lower cap, an inner-electrode stack formed from piling up several inner-electrode gaps (g), and an upper cap into a unity, and at least satisfies the condition that the lower cap and the upper cap has a thickness smaller than a thickness of the inner-electrode gap (g), but equal to or greater than 0.1 times of the thickness of the inner-electrode gap (g).

A varistor composition free of Sb comprising: (a) ZnO; (b) BBiZnPr glass, or BBiZnLa glass, or a mixture thereof; (c) a cobalt compound, a chromium compound, a nickel compound, a manganese compound, or mixtures thereof; (d) SnO.sub.2; and (e) an aluminum compound, a silver compound, or a mixture thereof. By adjusting the ratio between the components, the varistor composition may be made into a multilayer varistor with inner electrodes having a low concentration of noble metals at a sintering temperature less than 1200 C. The multilayer varistor made from the varistor composition has good maximum surge current, good ESD withstand ability, and low fabrication cost.

A varistor composition free of Sb comprising: (a) ZnO; (b) BBiZnPr glass, or BBiZnLa glass, or a mixture thereof; (c) a cobalt compound, a chromium compound, a nickel compound, a manganese compound, or mixtures thereof; (d) SnO.sub.2; and (e) an aluminum compound, a silver compound, or a mixture thereof. By adjusting the ratio between the components, the varistor composition may be made into a multilayer varistor with inner electrodes having a low concentration of noble metals at a sintering temperature less than 1200 C. The multilayer varistor made from the varistor composition has good maximum surge current, good ESD withstand ability, and low fabrication cost.

A structure and method for fabricating a laterally configured thin film varistor surge protection device using low temperature sputtering techniques which do not damage IC device components contiguous to the varistor being fabricated. The lateral thin film varistor may include a continuous layer of alternating regions of a first metal oxide layer and a second metal oxide layer formed between two laterally spaced electrodes using a low temperature sputtering process followed by a low temperature annealing process.

A process for producing a multilayer varistor (MLV) if remained its size unchanged as prior arts is favorable to outstandingly increase overall current-carrying area and improve the performance of final produced MLV; and the MLV has laminated a lower cap, an inner-electrode stack formed from piling up several inner-electrode gaps (g), and an upper cap into a unity, and at least satisfies the condition that the lower cap and the upper cap has a thickness smaller than a thickness of the inner-electrode gap (g), but equal to or greater than 0.1 times of the thickness of the inner-electrode gap (g).

The present invention relates to a product and fabrication method for a varistor comprising a solid phase of zinc oxide particles substantially uniformly dispersed within a resin media. The varistor of the present invention is synthesised by mixing a substantially homogenous mixture of solid zinc oxide particles and a resin media, and heating the mixture under conditions to melt the resin and suspend the solid zinc oxide particles therein.

The present invention relates to a product and fabrication method for a varistor comprising a solid phase of zinc oxide particles substantially uniformly dispersed within a resin media. The varistor of the present invention is synthesised by mixing a substantially homogenous mixture of solid zinc oxide particles and a resin media, and heating the mixture under conditions to melt the resin and suspend the solid zinc oxide particles therein.