The invention provides a method for adjusting the resistance value of a thin film resistor layer in a semiconductor structure, which comprises forming the thin film resistor layer, the material of the thin film resistor layer comprises titanium nitride, and the thin film resistor layer has an original resistance value, a mask layer with tensile force is formed above the thin film resistor layer, and the mask layer with tensile force changes a lattice size of the thin film resistor layer, so that the lattice size of the thin film resistor layer becomes larger and the original resistance value of the thin film resistor layer is reduced.

A thermistor having a ceramic main body, which contains a ceramic material as the main constituent. The ceramic main body has at least one electrically insulating layer. The electrically insulating layer is arranged within the ceramic main body and contains a main component which has a composition different from the ceramic material.

A ceramic multi-layer component and a method for producing a ceramic multi-layer component are disclosed. In an embodiment a ceramic multi-layer component includes a stack with ceramic layers and electrode layers arranged between them, wherein the ceramic layers and the electrode layers are arranged above one another along a stacking direction, wherein at least one first electrode layer extends along a first main extension direction from a first end region to a second end region of the first electrode layer, and wherein the at least one first electrode layer has a current-carrying capacity that decreases along the first main extension direction.

Polymeric positive temperature coefficient (PPTC) bodies and fuse devices formed therefrom are described. In various embodiments, the PPTC bodies comprise a matrix polymer and a conductive filler comprising a compound of general formula M.sub.n+1AX.sub.n, where M is a transition d metal element, A is a p-block element, X is carbon or nitrogen, and n is 1, 2 or 3.

A fuse device including a fuse component, a first electrode, disposed on a first side of the fuse component, a second electrode, disposed on a second side of the fuse component, and a phase change component, disposed in thermal contact with the fuse component. The fuse component may comprise a fuse temperature, wherein the phase change component exhibits a phase change temperature, the phase change temperature marking a phase transition of the phase change component, and wherein the phase change temperature is less than the fuse temperature.

A method of forming a resistor circuit, the method comprising forming a first resistor comprising a first type of resistor, forming a second resistor comprising a second type of resistor, the first type of resistor being different from the second type of resistor and simultaneously doping a first part of the first resistor and a second part of the second resistor, the first resistor and the second resistor being configured such that doping of the first part of the first resistor and the second part of the second resistor defines a temperature coefficient of the first resistor and a temperature coefficient of the second resistor, wherein the temperature coefficient of the first resistor and the temperature coefficient of the second resistor have opposite signs.

An electronic component includes a ceramic element, glass-containing Au layers formed on both surfaces of the ceramic element, and an Au—Sn alloy layer formed on at least one of the glass-containing Au layers; the electronic component further includes a pure-Au layer between the glass-containing Au layer and the Au—Sn alloy layer; furthermore, the Au—Sn alloy layer has an Au—Sn eutectic structure.

A ceramic multi-layer component and a method for producing a ceramic multi-layer component are disclosed. In an embodiment a ceramic multi-layer component includes a stack with ceramic layers and electrode layers arranged between them, wherein the ceramic layers and the electrode layers are arranged above one another along a stacking direction, wherein at least one first electrode layer extends along a first main extension direction from a first end region to a second end region of the first electrode layer, and wherein the at least one first electrode layer has a current-carrying capacity that decreases along the first main extension direction.

A PPTC device is provided. The PPTC device may include a first electrode and a second electrode, disposed opposite the first electrode. The PPTC device may include a PPTC layer, disposed between the first electrode and the second electrode, the PPTC layer comprising a polymer matrix formed from a thermoplastic polyurethane (TPU) material.

An inductor structure is provided that is positioned within a via of a printed circuit board. The inductor structure includes a via extending through a printed circuit board. The inductor structure includes at least one coil of an electrically conductive material beginning at a first opening to the via continuously present on a sidewall of the via encircling a center of the via extending to a second opening of the via opposite the first opening of the via. It further includes at least electrode present in contact with an end of the coil at said first or second opening.