In examples, a transformer device comprises a first magnetic member; a second magnetic member; and a substrate layer between the first and second magnetic members. The substrate layer comprises a transformer coil. The transformer device includes a third magnetic member inside the substrate layer. The transformer coil encircles the third magnetic member. The third magnetic member physically separates from the first and second magnetic members.

In examples, a transformer device comprises a first magnetic member; a second magnetic member; and a substrate layer between the first and second magnetic members. The substrate layer comprises a transformer coil. The transformer device includes a third magnetic member inside the substrate layer. The transformer coil encircles the third magnetic member. The third magnetic member physically separates from the first and second magnetic members.

An on-chip magnetic structure includes a palladium activated seed layer and a substantially amorphous magnetic material disposed onto the palladium activated seed layer. The substantially amorphous magnetic material includes nickel in a range from about 50 to about 80 atomic % (at. %) based on the total number of atoms of the magnetic material, iron in a range from about 10 to about 50 at. % based on the total number of atoms of the magnetic material, and phosphorous in a range from about 0.1 to about 30 at. % based on the total number of atoms of the magnetic material. The magnetic material can include boron in a range from about 0.1 to about 5 at. % based on the total number of atoms of the magnetic material.

An on-chip magnetic structure includes a palladium activated seed layer and a substantially amorphous magnetic material disposed onto the palladium activated seed layer. The substantially amorphous magnetic material includes nickel in a range from about 50 to about 80 atomic % (at. %) based on the total number of atoms of the magnetic material, iron in a range from about 10 to about 50 at. % based on the total number of atoms of the magnetic material, and phosphorous in a range from about 0.1 to about 30 at. % based on the total number of atoms of the magnetic material. The magnetic material can include boron in a range from about 0.1 to about 5 at. % based on the total number of atoms of the magnetic material.

A method of manufacturing a composite component according to various aspects of the present disclosure includes disposing a fiber preform in a mold. The fiber preform includes a first portion having a first edge and a second portion having a second edge. The first edge and the second edge cooperate to at least partially define a gap. One of the first portion or the second portion includes a first ferromagnetic material and the other of the first portion or the second portion includes a first magnetic or magnetizable component. The method further includes closing the gap by generating a magnetic field from the first magnetic or magnetizable component. The method further includes injecting a polymer precursor into the mold. The method further includes forming the composite component by solidifying the polymer precursor to form a polymer. The composite component includes the fiber preform and the polymer.

A method of manufacturing a composite component according to various aspects of the present disclosure includes disposing a fiber preform in a mold. The fiber preform includes a first portion having a first edge and a second portion having a second edge. The first edge and the second edge cooperate to at least partially define a gap. One of the first portion or the second portion includes a first ferromagnetic material and the other of the first portion or the second portion includes a first magnetic or magnetizable component. The method further includes closing the gap by generating a magnetic field from the first magnetic or magnetizable component. The method further includes injecting a polymer precursor into the mold. The method further includes forming the composite component by solidifying the polymer precursor to form a polymer. The composite component includes the fiber preform and the polymer.

Disclosed are layered structures that include a polymeric layer and a varnish layer in contact with the polymeric layer, wires including the layered structures, and methods of making the layered structures. The polymeric layer includes a poly(ether ether ketone)(PEEK) and a poly(aryl ether sulfone) (PAES) and surprisingly exhibits markedly improved adhesion to the varnish layer without significant reduction in crystallization temperature of the polymeric layer.

Disclosed are layered structures that include a polymeric layer and a varnish layer in contact with the polymeric layer, wires including the layered structures, and methods of making the layered structures. The polymeric layer includes a poly(ether ether ketone)(PEEK) and a poly(aryl ether sulfone) (PAES) and surprisingly exhibits markedly improved adhesion to the varnish layer without significant reduction in crystallization temperature of the polymeric layer.

An on-chip magnetic structure includes a magnetic material comprising cobalt in a range from about 80 to about 90 atomic % (at. %) based on the total number of atoms of the magnetic material, tungsten in a range from about 4 to about 9 at. % based on the total number of atoms of the magnetic material, phosphorous in a range from about 7 to about 15 at. % based on the total number of atoms of the magnetic material, and palladium substantially dispersed throughout the magnetic material.

An on-chip magnetic structure includes a magnetic material comprising cobalt in a range from about 80 to about 90 atomic % (at. %) based on the total number of atoms of the magnetic material, tungsten in a range from about 4 to about 9 at. % based on the total number of atoms of the magnetic material, phosphorous in a range from about 7 to about 15 at. % based on the total number of atoms of the magnetic material, and palladium substantially dispersed throughout the magnetic material.