An oriented electrical steel sheet and a method of manufacturing the same are provided, and in a method of manufacturing an oriented electrical steel sheet including processes of producing a hot rolled plate by hot rolling a steel slab, performing or omitting hot rolled plate annealing, performing cold rolling, performing decarburization and nitride annealing, and performing final high temperature annealing, the decarburization and nitride annealing process is performed in a dew point range of 35-55 C., and in the final annealing process, a glassless additive including MgO is applied.

An on-chip magnetic structure includes a palladium activated seed layer and a substantially amorphous magnetic material disposed onto the palladium activated seed layer. The substantially amorphous magnetic material includes nickel in a range from about 50 to about 80 atomic % (at. %) based on the total number of atoms of the magnetic material, iron in a range from about 10 to about 50 at. % based on the total number of atoms of the magnetic material, and phosphorous in a range from about 0.1 to about 30 at. % based on the total number of atoms of the magnetic material. The magnetic material can include boron in a range from about 0.1 to about 5 at. % based on the total number of atoms of the magnetic material.

An on-chip magnetic structure structure includes a magnetic material comprising cobalt in a range from about 80 to about 90 atomic % (at. %) based on the total number of atoms of the magnetic material, tungsten in a range from about 4 to about 9 at. % based on the total number of atoms of the magnetic material, phosphorous in a range from about 7 to about 15 at. % based on the total number of atoms of the magnetic material, and palladium substantially dispersed throughout the magnetic material.

An on-chip magnetic structure structure includes a magnetic material comprising cobalt in a range from about 80 to about 90 atomic % (at. %) based on the total number of atoms of the magnetic material, tungsten in a range from about 4 to about 9 at. % based on the total number of atoms of the magnetic material, phosphorous in a range from about 7 to about 15 at. % based on the total number of atoms of the magnetic material, and palladium substantially dispersed throughout the magnetic material.

A system for automatically magnetically gripping non-magnetic objects. The system includes a robotic arm, a magnetic actuator, and a free magnetic element. The magnetic actuator may be coupled to an end effector of the robotic arm. A non-magnetic object may be placed between the free magnetic element and the magnetic actuator. The magnetic actuator may magnetically attract the free magnetic element to securely grasp the non-magnetic object therebetween. A corresponding method is also disclosed and claimed herein.

An on-chip magnetic structure includes a magnetic material comprising cobalt in a range from about 80 to about 90 atomic % (at. %) based on the total number of atoms of the magnetic material, tungsten in a range from about 4 to about 9 at. % based on the total number of atoms of the magnetic material, phosphorous in a range from about 7 to about 15 at. % based on the total number of atoms of the magnetic material, and palladium substantially dispersed throughout the magnetic material.

An on-chip magnetic structure includes a magnetic material comprising cobalt in a range from about 80 to about 90 atomic % (at. %) based on the total number of atoms of the magnetic material, tungsten in a range from about 4 to about 9 at. % based on the total number of atoms of the magnetic material, phosphorous in a range from about 7 to about 15 at. % based on the total number of atoms of the magnetic material, and palladium substantially dispersed throughout the magnetic material.

Provided is a magnetic refrigeration material whose magnetic transition temperature has been adjusted with high accuracy and which includes at least a first predetermined magnetic refrigeration material and a second predetermined magnetic refrigeration material which differs from the first magnetic refrigeration material. The absolute value of the difference between the magnetic transition temperature of the present magnetic refrigeration material and a target magnetic transition temperature is 0.7 K or less. The content of the first magnetic refrigeration material and the content of the second magnetic refrigeration material are determined by the magnetic transition temperatures of the first magnetic refrigeration material and the second magnetic refrigeration material and by a target magnetic transition temperature of the magnetic refrigeration material.

Provided is a magnetic refrigeration material whose magnetic transition temperature has been adjusted with high accuracy and which includes at least a first predetermined magnetic refrigeration material and a second predetermined magnetic refrigeration material which differs from the first magnetic refrigeration material. The absolute value of the difference between the magnetic transition temperature of the present magnetic refrigeration material and a target magnetic transition temperature is 0.7 K or less. The content of the first magnetic refrigeration material and the content of the second magnetic refrigeration material are determined by the magnetic transition temperatures of the first magnetic refrigeration material and the second magnetic refrigeration material and by a target magnetic transition temperature of the magnetic refrigeration material.

Implementations described herein provide systems and methods for wireless charging. In one implementation, a portable electronic device comprises a housing, a planar inductor coil, and a ferromagnetic shield. The planar inductor coil is disposed in the housing and comprises a conductive wire wound a plurality of turns about a center point and in increasing radii. The ferromagnetic shield is disposed in the housing and overlaps the planar inductor coil. The ferromagnetic shield comprises a first layer comprising a first plurality of iron-based nanocrystalline ribbons arranged in adjacent rows along a first direction and a second layer comprising a second plurality of iron-based nanocrystalline ribbons overlapping the first layer. The second plurality of iron-based nanocrystalline ribbons is arranged in adjacent rows along a second direction different from the first direction.