Disclosed is a ferromagnetic element-substituted room-temperature multiferroic material having ferromagnetism and ferroelectricity at room temperature, wherein the ferromagnetic element-substituted room-temperature multiferroic material includes a compound of chemical formula 1: <chemical formula 1> (Pb.sub.1-xM.sub.x)Fe.sub.1/2Nb.sub.1/2O.sub.3. In chemical formula 1, M represents a ferromagnetic element, and x represents a number greater than 0 and smaller than 1.

An internal structure of a magnetic material is phase-separated into at least a first phase and a second phase. At least one of the first phase and the second phase includes a compound having a perovskite structure. The first phase and the second phase include Mn, Sn, and N. According to this, it is possible to obtain a magnetic material in which magnetic properties such as a coercive force are improved. In addition, in a case where a rare-earth element is not included in elements that constitute the magnetic material, it is possible to obtain a magnetic material having corrosion resistance.

The present invention relates to new multiferroic materials. More particularly, the present invention relates to new multiferroic single phase ceramic materials as well as to thin films formed from these materials, methods of preparing these materials and their use as multiferroic materials in electronic components and devices.

The present invention relates to a ferrite particle, containing a crystal phase component containing a perovskite crystal represented by the compositional formula: RZrO.sub.3 (provided that R represents an alkaline earth metal element), and having an apparent density in a range represented by the following formula:
1.90Y2.45
provided that Y in the formula is the apparent density (g/cm.sup.3) of the ferrite particle.

The present invention relates to a ferrite particle containing a crystal phase component containing a perovskite-type crystal represented by a composition formula of RZrO3 (wherein R is an alkaline earth metal element), and a Mg content of 0.45 mass % or less. The present invention also relates to a carrier core material for an electrophotographic developer, containing the ferrite particle; a carrier for an electrophotographic developer, containing the ferrite particle and a resin coating layer provided on a surface of the ferrite particle; and an electrophotographic developer containing the carrier for an electrophotographic developer and a toner.