A storage element is provided. The storage element includes a memory layer; a fixed magnetization layer; an intermediate layer including a non-magnetic material; wherein the intermediate layer is provided between the memory layer and the fixed magnetization layer; wherein the fixed magnetization layer includes at least a first magnetic layer, a second magnetic layer, and a non-magnetic layer, and wherein the first magnetic layer includes a CoFeB composition. A memory apparatus and a magnetic head are also provided.

According to one embodiment, a microwave sensor includes a first stacked body and a first controller. The first stacked body includes a first magnetic layer, a second magnetic layer, and a first nonmagnetic layer. The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer. The first controller is electrically connected to the first magnetic layer and the second magnetic layer. The first controller is configured to supply a current to the first stacked body and is configured to sense a value corresponding to a first electrical resistance between the first magnetic layer and the second magnetic layer. A second magnetization of the second magnetic layer is aligned with a first direction from the first magnetic layer toward the second magnetic layer. The value corresponding to the first electrical resistance changes according to a microwave.

A method for manufacturing perpendicular magnetic recording medium which includes magnetic recording layer having desired film thickness while maintaining high magnetic anisotropy and having more homogenized magnetic characteristics. The method includes: (A) preparing non-magnetic substrate; (B) laminating magnetic recording layer on the substrate; and (C) heating the substrate on which the magnetic recording layer is laminated to a temperature of 400 to 600? C. The step (B) includes at least forming a first magnetic recording layer and a second magnetic layer thereon. The first layer has a granular structure including a first magnetic crystal grain constituted by an ordered alloy surrounded by a first non-magnetic grain boundary constituted by carbon, and the second layer has a granular structure including a second magnetic crystal grain constituted by an ordered alloy surrounded by a second non-magnetic grain boundary constituted by a non-magnetic material constituted by boron and carbon.

A spintronic memory device having a spin momentum-locking (SML) channel, a nanomagnet structure (NMS) disposed on the SML, and a plurality of normal metal electrodes disposed on the SML. The magnetization orientation of the NMS is controlled by current injection into the SML through normal metal electrode. The magnetization orientation of the NMS is determined by measuring voltages across the NMS and the SML while flowing charge current through the SML via the normal metal electrodes.

A magnetic memory including a plurality of magnetic junctions and at least one spin-orbit interaction (SO) active layer is described. Each of the magnetic junctions includes a pinned layer, a free layer and a nonmagnetic spacer layer between reference and free layers. The free layer has at least one of a tilted easy axis and a high damping constant. The tilted easy axis is at a nonzero acute angle from a direction perpendicular-to-plane. The high damping constant is at least 0.02. The at least one SO active layer is adjacent to the free layer and carries a current in-plane. The at least one SO active layer exerts a SO torque on the free layer due to the current. The free layer is switchable using the SO torque.

Devices are described that include a multi-layered structure that is non-magnetic at room temperature, and which comprises alternating layers of Co and at least one other element E (such as Ga, Ge, and Sn). The composition of this structure is represented by Co.sub.1-xE.sub.x, with x being in the range from 0.45 to 0.55. The structure is in contact with a first magnetic layer that includes a Heusler compound. An MRAM element may be formed by overlying, in turn, the first magnetic layer with a tunnel barrier, and the tunnel barrier with a second magnetic layer (whose magnetic moment is switchable). Improved performance of the MRAM element may be obtained by placing a pinning layer between the first magnetic layer and the tunnel barrier.

A method includes depositing a magnetic track layer on a seed layer, depositing an alloy layer on the magnetic track layer, depositing a tunnel barrier layer on the alloy layer, depositing a pinning layer on the tunnel barrier layer, depositing a synthetic antiferromagnetic layer spacer on the pinning layer, depositing a pinned layer on the synthetic antiferromagnetic spacer layer and depositing an antiferromagnetic layer on the pinned layer, and another method includes depositing an antiferromagnetic layer on a seed layer, depositing a pinned layer on the antiferromagnetic layer, depositing a synthetic antiferromagnetic layer spacer on the pinned layer, depositing a pinning layer on the synthetic antiferromagnetic layer spacer, depositing a tunnel barrier layer on the pinning layer, depositing an alloy layer on the tunnel barrier layer and depositing a magnetic track layer on alloy layer.

A material may include at least one of Bi.sub.xSe.sub.(1-x), Bi.sub.xTe.sub.(1-x), or Sb.sub.xTe.sub.(1-x), where x is greater than 0 and less than 1. In some examples, the material exhibits a Spin Hall Angle of greater than 3.5 at room temperature. The disclosure also describes examples of devices that include a spin-orbit torque generating layer, in which the spin-orbit torque generating layer includes at least one of Bi.sub.xSe.sub.(1-x), Bi.sub.xTe.sub.(1-x), or Sb.sub.xTe.sub.(1-x), where x is greater than 0 and less than 1. In some examples, the spin-orbit torque generating layer exhibits a Spin Hall Angle of greater than 3.5 at room temperature.

A storage element is provided. The storage element includes a memory layer; a fixed magnetization layer; an intermediate layer including a non-magnetic material; wherein the intermediate layer is provided between the memory layer and the fixed magnetization layer; wherein the fixed magnetization layer includes at least a first magnetic layer, a second magnetic layer, and a non-magnetic layer, and wherein the first magnetic layer includes a CoFeB composition. A memory apparatus and a magnetic head are also provided.

A kind of nano-porous FePt alloys with strong permanent magnetism and a preparation method therefor. The nano-porous FePt alloys have the composition of Fe.sub.wCo.sub.xPt.sub.yPd.sub.z and are composed of an ordered hard magnetic L1.sub.0-FePt phase, and have an integrated doubly-connected nano-porous structure with pore sizes of 10-50 nm, and ligament thicknesses of 20-80 nm. Under an applied magnetic field of 50 kOe, the coercivity, magnetization intensity and remanence of the alloys are 13.4-18.5 kOe, 40.4-56.3 emu/g and 28.3-37.4 emu/g, respectively. The master alloy ingots are prepared using electric arc melting or induction melting; the alloy ribbons are prepared using the single-roller melt-spinning equipment; the precursors mainly containing nano-composite phases of hard magnetic L1.sub.0-FePt and soft magnetic Fe.sub.2B are obtained directly by the melt-spinning or obtained by conducting vacuum annealing on the melt-spun ribbons; and the nano-porous FePt alloys with a single L1.sub.0-FePt phase are obtained by the electrochemical dealloying technique, thereby filling in the technical blank of nano-porous metal materials with permanent magnetism.