Disclosed is a perpendicularly magnetized film structure using a highly heat resistant underlayer film on which a cubic or tetragonal perpendicularly magnetized film can grow, comprising a substrate of a cubic single crystal substrate having a (001) plane or a substrate having a cubic oriented film that grows to have the (001) plane; an underlayer formed on the substrate from a thin film of a metal having an hcp structure in which the [0001] direction of the thin metal film forms an angle in the range of 42 to 54 with respect to the <001> direction or the (001) orientation of the substrate; and a perpendicularly magnetized layer located on the metal underlayer and formed from a cubic material selected from a Co-based Heusler alloy and a cobalt-iron (CoFe) alloy having a bcc structure a constituent material, and grown to have the (001) plane.

A magnetoresistance element (e.g. a spin valve) for detecting a changing magnetic field includes a pinning layer, pinned layer adjacent to the pinning layer, a spacer layer adjacent to the pinned layer, and a free layer adjacent to the spacer layer and arranged so that the spacer layer is between the pinned layer and the free layer. The pinned layer has a bias with a bias direction configured to reduce an effect of a static field on the detection of the changing magnetic field.

A first memory device includes a first magnetoresistive cell having a plurality of deposition layers. A second memory device includes a second magnetoresistive cell having a plurality of deposition layers. Each of the plurality of deposition layers of the second magnetoresistive cell corresponds to one of the plurality of deposition layers of the first magnetoresistive cell. One of the plurality of deposition layers of the second magnetoresistive cell is thinner than a corresponding deposition layer of the plurality of deposition layers of the first magnetoresistive cell.

A storage element is provided. The storage element includes a memory layer; a fixed magnetization layer; an intermediate layer including a non-magnetic material; wherein the intermediate layer is provided between the memory layer and the fixed magnetization layer; wherein the fixed magnetization layer includes at least a first magnetic layer, a second magnetic layer, and a non-magnetic layer, and wherein the first magnetic layer includes a CoFeB composition. A memory apparatus and a magnetic head are also provided.

Provided is an FePt based magnetic material sintered compact, comprising BN and SiO.sub.2 as non-magnetic materials, wherein Si and O are present in a region where B or N is present at a cut surface of the sintered compact. An object of the present invention is to provide a high density sputtering target which enables production of a magnetic thin film for heat-assisted magnetic recording media, and also reduces the amount of particles generated during sputtering.

A two-dimensional optical scanning mirror device, a manufacturing method for the same, a two-dimensional optical scanning device and an image projector. A two-dimensional optical scanning mirror device includes a substrate, a movable mirror portion supported on the substrate in such a manner that two-dimension optical scanning is possible, a hard magnetic thin film provided in the movable mirror portion and a magnetic field generator that includes at least an alternating magnetic field generator for driving the movable mirror portion, where the hard magnetic thin film has a magnetization direction in a direction of a film plane, and the ratio of the magnetic field generated by the magnetic field generator relative to the coercive force of the hard magnetic thin film is 0.2 or lower.

A kind of nano-porous FePt alloys with strong permanent magnetism and a preparation method therefor. The nano-porous FePt alloys have the composition of Fe.sub.wCo.sub.xPt.sub.yPd.sub.z and are composed of an ordered hard magnetic L1.sub.0-FePt phase, and have an integrated doubly-connected nano-porous structure with pore sizes of 10-50 nm, and ligament thicknesses of 20-80 nm. Under an applied magnetic field of 50 kOe, the coercivity, magnetization intensity and remanence of the alloys are 13.4-18.5 kOe, 40.4-56.3 emu/g and 28.3-37.4 emu/g, respectively. The master alloy ingots are prepared using electric arc melting or induction melting; the alloy ribbons are prepared using the single-roller melt-spinning equipment; the precursors mainly containing nano-composite phases of hard magnetic L1.sub.0-FePt and soft magnetic Fe.sub.2B are obtained directly by the melt-spinning or obtained by conducting vacuum annealing on the melt-spun ribbons; and the nano-porous FePt alloys with a single L1.sub.0-FePt phase are obtained by the electrochemical dealloying technique, thereby filling in the technical blank of nano-porous metal materials with permanent magnetism.

An MTJ structure having vertical magnetic anisotropy is provided. The MTJ structure having vertical magnetic anisotropy can comprise: a substrate; an artificial antiferromagnetic layer located on the substrate; a buffer layer located on the artificial antiferromagnetic layer, and including W or an alloy containing W; a first ferromagnetic layer located on the buffer layer, and having vertical magnetic anisotropy; a tunneling barrier layer located on the first ferromagnetic layer; and a second ferromagnetic layer located on the tunneling barrier layer, and having vertical magnetic anisotropy. Accordingly, in the application of bonding the artificial antiferromagnetic layer with a CoFeB/MgO/CoFeB structure, the MTJ structure having improved thermal stability at high temperature can be provided by using the buffer layer therebetween.

A storage element is provided. The storage element includes a memory layer; a fixed magnetization layer; an intermediate layer including a non-magnetic material; wherein the intermediate layer is provided between the memory layer and the fixed magnetization layer; wherein the fixed magnetization layer includes at least a first magnetic layer, a second magnetic layer, and a non-magnetic layer, and wherein the first magnetic layer includes a CoFeB composition. A memory apparatus and a magnetic head are also provided.

Various embodiments to mitigate the contamination of electroplated cobalt-platinum films on substrates are described. In one embodiment, a method of manufacture of a device includes depositing a diffusion barrier over a substrate, depositing a seed layer upon the diffusion barrier, and depositing a cobalt-platinum magnetic layer upon the seed layer. In a second embodiment, a method of manufacture of a device may include depositing a diffusion barrier over a substrate and depositing a cobalt-platinum magnetic layer upon the diffusion barrier. In a third embodiment, a method of manufacture of a device may include depositing an adhesion layer over a substrate, depositing a seed layer upon the adhesion layer, and depositing a cobalt-platinum magnetic layer over the seed layer. Based in part on these methods of manufacture, improvements in the interfaces between the layers can be achieved after annealing with substantial improvements in the magnetic properties of the cobalt-platinum magnetic layer.