A display panel and a display device is disclosed. The display panel includes a stack structure including a plurality of functional film layers stacked successively; and two film layers which are disposed on an upper surface and a lower surface of the stack structure, respectively and attractable to each other by a magnetic force.

A magnetoresistive element according to an embodiment includes: a first magnetic layer; a second magnetic layer; and a first nonmagnetic layer disposed between the first magnetic layer and the second magnetic layer, the second magnetic layer containing a material with a composition (lR.sub.1-xhR.sub.x).sub.z(TM.sub.1-yZ.sub.y).sub.1-z (0<x<1, 0?y?0.6, 0.13?z?0.22) where lR is at least one element of Y, La, Ce, Pr, Nd, and Sm, hR is at least one element of Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, or Lu, TM is at least one element of Mn, Fe, Co, or Ni, and Z is at least one element of B, C, Mg, Al, Sc, Ti, Cu, or Zn.

The present invention concerns a magnetic-photoconductive material including orientable magnetic moments or spins, the material being configured to generate photo-carriers permitting to orientate or re-orientate the magnetic moments or spins at a material temperature less than the Curie Temperature (T.sub.C) or Curie point.

An integrated circuit is a layered device, on a semiconductor substrate, which contains metal electrodes that sandwich a piezoelectric layer, followed by a magnetostrictive layer and a metal coil. The metal electrodes define an electrical port across which to receive an alternating current (AC) voltage, which is applied across the piezoelectric layer to cause a time-varying strain in the piezoelectric layer. The magnetostrictive layer is to translate the time-varying strain, received by way of a vibration mode from interaction with the piezoelectric layer, into a time-varying electromagnetic field. The metal coil, disposed on the magnetostrictive layer, includes a magnetic port at which to induce a current based on exposure to the time-varying electromagnetic field generated by the magnetostrictive layer.

A thin film magnet includes a substrate, an oxidation-inhibiting layer in an amorphous state disposed on an upper surface of the substrate, a first magnetic layer disposed on the oxidation-inhibiting layer, an intermediate layer disposed on the first magnetic layer, a second magnetic layer disposed on the intermediate layer, and a second oxidation-inhibiting layer in an amorphous state disposed above the second magnetic layer. The intermediate layer contains metal particles. The metal particles are diffused in the first magnetic layer and the second magnetic layer. The concentration of the metal particles in a part of the first magnetic layer decreases as the distance from the intermediate layer to the part of the first magnetic layer increases. The concentration of the metal particles in a part of the second magnetic layer decreases as the distance from the intermediate layer to the part of the second magnetic layer increases.

A device and to a method of producing a device, wherein the method includes, inter alia, providing a substrate and generating at least two mutually spaced-apart cavities within the substrate. In accordance with the invention, each cavity has a depth of at least 50 m. The cavities are filled up with magnetic particles, wherein the magnetic particles enter into contact with one another at points of contact, and wherein cavities are formed between the points of contact. At least some of the magnetic particles are connected to one another at their points of contact, specifically by coating the magnetic particles, wherein the cavities are at least partly penetrated by the layer produced in the coating process, so that the connected magnetic particles form a magnetic porous structure.

The invention provides a nanocomposite magnet, which has achieved high coercive force and high residual magnetization. The magnet is a non-ferromagnetic phase that is intercalated between a hard magnetic phase with a rare-earth magnet composition and a soft magnetic phase, wherein the non-ferromagnetic phase reacts with neither the hard nor soft magnetic phase. A hard magnetic phase contains Nd.sub.2Fe.sub.14B, a soft magnetic phase contains Fe or Fe.sub.2Co, and a non-ferromagnetic phase contains Ta. The thickness of the non-ferromagnetic phase containing Ta is 5 nm or less, and the thickness of the soft magnetic phase containing Fe or Fe.sub.2Co is 20 nm or less. Nd, or Pr, or an alloy of Nd and any one of Cu, Ag, Al, Ga, and Pr, or an alloy of Pr and any one of Cu, Ag, Al, and Ga is diffused into a grain boundary phase of the hard magnetic phase of Nd.sub.2Fe.sub.14B.

Disclosed herein are magnetic materials comprising rare earth nitrides and, more particularly, magnetic materials comprising multilayer-structured materials comprising one relatively soft and one relatively hard magnetic layer. The magnetic materials comprise a first ferromagnetic layer, a second ferromagnetic layer, and a blocking layer between and in contact with each of the first 5 and second ferromagnetic layers. The first and second ferromagnetic layers have different coercive fields. The first ferromagnetic layer comprises a first rare earth nitride material and the second ferromagnetic layer comprises a second rare earth nitride material. Also disclosed are methods for preparing the materials. The materials are useful in the fabrication of devices, such as GMR magnetic field sensors, MRAM devices, TMR magnetic field sensors, and magnetic 10 tunnel junctions.

A magnetic microcapsule, preparation method thereof and a magnetic film are disclosed, relating to microcapsule technology. The microcapsules use a combination of cationic and anionic polymers as the shell material, forming spindle-shaped, durable spheres to enhance strength. The core material contains at least two types of magnetic particles with different strengths, allowing adjustable magnetic forces to improve writing, erasure, and contrast. It also includes non-magnetic particles, an oil-based solvent, and a suspension stabilizer, forming a stable cross-linked network and electrostatic adsorption layer to prevent sedimentation and ensure smooth writing and lasting marks. The resulting magnetic film offers excellent responsiveness, enabling quick and thorough erasure by adjusting the magnetic pen's force and frequency.

The present invention relates to a metallic hard magnetic material selected from an at least binary ferromagnetic or ferrimagnetic compound, with the metallic hard magnetic material including at least two different elements selected from the group consisting of 3d and 4f elements, where the metallic hard magnetic material is under an external magnetic field B of 0.1 T.