A method of manufacturing a magnetoresistive random access memory (MRAM). The method includes forming a first CoFeB layer of the MTJ devices, the first CoFeB layer being amorphous and forming a magnesium oxide (MgO) layer of the MTJ devices over the first CoFeB layer. Further, there is a forming of a second CoFeB layer of the MTJ devices, the second CoFeB layer being amorphous over the MgO layer, and annealing the MTJ devices. The first and second CoFeB layers are crystallized by the annealing, and the MgO layer is poly-crystalline in which a (001) crystal plane is preferentially oriented.

A multilayer magnetic sheet comprises ten or more layers of magnetic strips each formed in a band shape with a short side and a long side. The magnetic strips are aligned and arranged in a plate shape in each of the layers such that the long sides of the magnetic strips are adjacent to each other. The layers comprise first layers, in which the long sides of the adjacent magnetic strips overlap, and second layers, in which the long sides of the adjacent magnetic strips do not overlap. The first layers comprise at least two stacked layers. A position of the long side in one layer included in the second layers is separated from a position of the long side in another layer included in the second layers by 0.5 mm or more in a direction in which the short side extends.

The output voltage of an MRAM is increased by means of an Fe(001)/MgO(001)/Fe(001) MTJ device, which is formed by microfabrication of a sample prepared as follows: A single-crystalline MgO (001) substrate is prepared. An epitaxial Fe(001) lower electrode (a first electrode) is grown on a MgO(001) seed layer at room temperature, followed by annealing under ultrahigh vacuum. A MgO(001) barrier layer is epitaxially formed on the Fe(001) lower electrode (the first electrode) at room temperature, using a MgO electron-beam evaporation. A Fe(001) upper electrode (a second electrode) is then formed on the MgO(001) barrier layer at room temperature. This is successively followed by the deposition of a Co layer on the Fe(001) upper electrode (the second electrode). The Co layer is provided so as to increase the coercive force of the upper electrode in order to realize an antiparallel magnetization alignment.

An inductor includes a magnetic core portion and a coil portion. The magnetic core portion is a multilayer film in which a nanogranular magnetic film and a soft magnetic alloy film are alternately stacked. The nanogranular magnetic film has a structure in which nano-domains of a first phase are dispersed in a second phase. The first phase contains one or more selected from Fe and Co, and the second phase contains one or more selected from O, N, and F. The volume ratio of the first phase to the total volume of the first phase and the second phase is 60% or less. The soft magnetic alloy film contains one or more selected from Fe and Co. The total amount of Fe, Co, and Ni in the soft magnetic alloy film is 70 at % or more.

A modified double magnetic tunnel junction structure is provided which includes an amorphous spin diffusion layer (i.e., an amorphous non-magnetic, spin-conducting metallic layer) sandwiched between a magnetic free layer and a first tunnel barrier layer; the first tunnel barrier layer contacts a first magnetic reference layer. A second tunnel barrier layer is located on the magnetic free layer and a second magnetic reference layer is located on the second tunnel barrier layer. Such a modified double magnetic tunnel junction structure exhibits efficient switching (at a low current) and speedy readout (high tunnel magnetoresistance).

The output voltage of an MRAM is increased by means of an Fe(001)/MgO(001)/Fe(001) MTJ device, which is formed by microfabrication of a sample prepared as follows: A single-crystalline MgO (001) substrate is prepared. An epitaxial Fe(001) lower electrode (a first electrode) is grown on a MgO(001) seed layer at room temperature, followed by annealing under ultrahigh vacuum. A MgO(001) barrier layer is epitaxially formed on the Fe(001) lower electrode (the first electrode) at room temperature, using a MgO electron-beam evaporation. A Fe(001) upper electrode (a second electrode) is then formed on the MgO(001) barrier layer at room temperature. This is successively followed by the deposition of a Co layer on the Fe(001) upper electrode (the second electrode). The Co layer is provided so as to increase the coercive force of the upper electrode in order to realize an antiparallel magnetization alignment.

There is provided a magnetic field shielding sheet for wireless power transmission. The present disclosure to provide a magnetic field shielding sheet for wireless power transmission that includes a first shielding sheet for shielding a magnetic field generated from a first wireless power transmission antenna operable in a magnetic induction method, a second shielding sheet for shielding a magnetic field generated from a second wireless power transmission antenna operable in a magnetic resonance method, and a third shielding sheet which is stacked on the same surface of the first shielding sheet and the second shielding sheet so as to cover the first shielding sheet and the second shielding sheet, for shielding the magnetic field generated from the second wireless power transmission antenna.

There is provided a magnetic field shielding sheet for wireless power transmission. The present disclosure to provide a magnetic field shielding sheet for wireless power transmission that includes a first shielding sheet for shielding a magnetic field generated from a first wireless power transmission antenna operable in a magnetic induction method, a second shielding sheet for shielding a magnetic field generated from a second wireless power transmission antenna operable in a magnetic resonance method, and a third shielding sheet which is stacked on the same surface of the first shielding sheet and the second shielding sheet so as to cover the first shielding sheet and the second shielding sheet, for shielding the magnetic field generated from the second wireless power transmission antenna.

Provided are a roll-shaped magnetic field shielding sheet, a method of manufacturing a magnetic field shielding sheet, and an antenna module using the same, which can improve the efficiency of the overall production process by improving a heat treatment process for a thin film magnetic sheet. The magnetic field shielding sheet includes: at least one thin film magnetic sheet; an insulating layer or insulating layers formed on one or either side of the at least one thin film magnetic sheet; and an adhesive layer formed between the insulating layers of the adjacent thin film magnetic sheets to laminate and bond the thin film magnetic sheets, wherein the thin film magnetic sheet is flake-treated to be divided into a plurality of magnetic substance fragments.

A sensor may include a core and a coil. The core may include a rectangular substrate, a layer of magnetically-permeable material disposed on the substrate, and an adhesive rigidly coupling two ends of the substrate so as to form a tube with the rectangular substrate. The coil may be wound on the tube. The core may further include a layer of radiopaque material. The core may further include a flex pad for electrically coupling the coil with an external system.